公开(公告)号：US20180351037A1

公开(公告)日：2018-12-06

申请号：US15779388

申请日：2016-11-28

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ALEDIA

发明人： Xin ZHANG ,  Bruno-Jules DAUDIN ,  Bruno GAYRAL ,  Philippe GILET

IPC分类号： H01L33/08 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/08 ,  H01L21/02387 ,  H01L21/02458 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/18 ,  H01L33/32

摘要： The invention relates to an optoelectronic device (1) comprising at least one three-dimensional semiconductor structure (2) extending along a longitudinal axis (Δ) substantially orthogonal to a plane of a substrate (3) on which same lies, and comprising: a first doped portion (10), extending from one surface of the substrate (3) along the longitudinal axis (Δ); an active portion (30) comprising a passivation layer (34) and at least one quantum well (32) covered laterally by said passivation layer (34), the quantum well (32) of the active portion (30) having a mean diameter greater than that of said first doped portion (10), said active portion (30) extending from the first doped portion (10) along the longitudinal axis (Δ); and a second doped portion (20), extending from the active portion (30) along the longitudinal axis (Δ). The invention is characterized in that the device comprises a plurality of three-dimensional semiconductor structures (2) extending substantially in parallel with one another, the active portions (30) of which are in mutual contact.