公开(公告)号：US11823967B2

公开(公告)日：2023-11-21

申请号：US17100102

申请日：2020-11-20

Applicant: CORNING INCORPORATED

Inventor： Robert Alan Bellman ,  Indrajit Dutta ,  Yi-Cheng Hsieh ,  Toshihiko Ono ,  Nicholas James Smith

IPC: H01L23/15 ,  H01L23/00 ,  C03C15/00 ,  C03C23/00 ,  C03C21/00

CPC classification number: H01L23/15 ,  C03C15/00 ,  C03C21/002 ,  C03C23/0075 ,  H01L23/562 ,  Y10T428/24364 ,  Y10T428/24479

Abstract: A glass or glass-ceramic carrier substrate, the substrate having undergone at least one complete cycle of a semiconductor fabrication process and having also undergone a reclamation process following the end of the semiconductor fabrication process; the glass or glass-ceramic carrier substrate comprising at least one of the following properties: (i) a coefficient of thermal expansion of less than 13 ppm/° C.; (ii) a Young's Modulus of 70 GPa to 150 GPa; (iii) an IR transmission of greater than 80% at a wavelength of 1064 nm; (iv) a UV transmission of greater than 20% at a wavelength of 255 nm to 360 nm; (v) a thickness tolerance within the same range as the thickness tolerance of the carrier substrate before undergoing at least one complete cycle of the semiconductor fabrication process; (vi) a total thickness variation of less than 2.5 μm; (vii) a failure strength of greater than 80 MPa using a 4-point-bending test; (viii) a pre-shape of 50 μm to 300 μm.

公开(公告)号：US20170369989A1

公开(公告)日：2017-12-28

申请号：US15630272

申请日：2017-06-22

Applicant: CORNING INCORPORATED

Inventor： Sarko Cherekdjian ,  Benedict Osobomen Egboiyi ,  William Brashear Mattingly, III ,  Michael Yoshiya Nishimoto ,  Toshihiko Ono ,  Parkash Chandra Panda ,  Trevor Edward Wilantewicz

IPC: C23C14/48 ,  H05K5/03 ,  H05K5/00

Abstract: Provided herein are ion-implanted glass based articles with improved flaw suppression properties. The ion-implanted glass based articles generally have a final indent fracture threshold (IFT) load of at least 650 grams, and/or a scratch threshold force of at least 10 N, which represents at least 1.25-fold enhancement compared to the glass based article prior to ion-implantation. Factors affecting the efficacy of the ion implantation process can include the IFT load of the starting glass or glass ceramic substrate (native IFT load), ion type, ion dose, implant energy, beam current, and glass temperature.

公开(公告)号：US20160190185A1

公开(公告)日：2016-06-30

申请号：US15061635

申请日：2016-03-04

Applicant: Corning Incorporated

Inventor： Jeanne Spadinger Cavuoti ,  Donald Arthur Clark ,  Sean Matthew Garner ,  Gregory Scott Glaesemann ,  Jun Hou ,  Jum Sik Kim ,  Toshihiko Ono ,  Daniel Arthur Sternquist

IPC: H01L27/12 ,  C03C15/02 ,  H01L21/02

CPC classification number: C03C15/02 ,  G02F1/1333 ,  H01L21/02019 ,  H01L27/1262 ,  H01L33/58 ,  Y10T428/1095

Abstract: Disclosed are controlled chemical etching processes used to modify the geometry of surface flaws in thin glass substrates and glass substrate assemblies formed therefrom, and in particular glass substrates suitable for the manufacture of active matrix displays that are essentially free of alkali metal oxides such as Na2O, K2O and Li2O.

公开(公告)号：US20210159134A1

公开(公告)日：2021-05-27

申请号：US17100102

申请日：2020-11-20

Applicant: CORNING INCORPORATED

Inventor： Robert Alan Bellman ,  Indrajit Dutta ,  Yi-Cheng Hsieh ,  Toshihiko Ono ,  Nicholas James Smith

IPC: H01L23/15 ,  H01L23/00 ,  C03C23/00 ,  C03C15/00 ,  C03C21/00

Abstract: A glass or glass-ceramic carrier substrate, the substrate having undergone at least one complete cycle of a semiconductor fabrication process and having also undergone a reclamation process following the end of the semiconductor fabrication process; the glass or glass-ceramic carrier substrate comprising at least one of the following properties: (i) a coefficient of thermal expansion of less than 13 ppm/° C.; (ii) a Young's Modulus of 70 GPa to 150 GPa; (iii) an IR transmission of greater than 80% at a wavelength of 1064 nm; (iv) a UV transmission of greater than 20% at a wavelength of 255 nm to 360 nm; (v) a thickness tolerance within the same range as the thickness tolerance of the carrier substrate before undergoing at least one complete cycle of the semiconductor fabrication process; (vi) a total thickness variation of less than 2.5 μm; (vii) a failure strength of greater than 80 MPa using a 4-point-bending test; (viii) a pre-shape of 50 μm to 300 μm.