公开(公告)号：US10892356B2

公开(公告)日：2021-01-12

申请号：US16376596

申请日：2019-04-05

Applicant: Cree, Inc.

Inventor： Saptharishi Sriram ,  Thomas Smith ,  Alexander Suvorov ,  Christer Hallin

IPC: H01L27/088 ,  H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/417 ,  H01L29/40 ,  H01L29/10

Abstract: An apparatus includes a substrate. The apparatus further includes a group III-nitride buffer layer on the substrate; a group III-nitride barrier layer on the group III-nitride buffer layer, the group III-nitride barrier layer including a higher bandgap than a bandgap of the group III-nitride buffer layer. The apparatus further includes a source electrically coupled to the group III-nitride barrier layer; a gate electrically coupled to the group III-nitride barrier layer; a drain electrically coupled to the group III-nitride barrier layer; and a p-region being at least one of the following: in the substrate or on the substrate below said group III-nitride barrier layer.

公开(公告)号：US20190237569A1

公开(公告)日：2019-08-01

申请号：US16376596

申请日：2019-04-05

Applicant: Cree, Inc.

Inventor： Saptharishi Sriram ,  Thomas Smith ,  Alexander Suvorov ,  Christer Hallin

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/1087 ,  H01L21/743 ,  H01L21/746 ,  H01L29/1083 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

Abstract: An apparatus includes a substrate. The apparatus further includes a group III-nitride buffer layer on the substrate; a group III-nitride barrier layer on the group III-nitride buffer layer, the group III-nitride barrier layer including a higher bandgap than a bandgap of the group III-nitride buffer layer. The apparatus further includes a source electrically coupled to the group III-nitride barrier layer; a gate electrically coupled to the group III-nitride barrier layer; a drain electrically coupled to the group III-nitride barrier layer; and a p-region being at least one of the following: in the substrate or on the substrate below said group III-nitride barrier layer.

公开(公告)号：US11862719B2

公开(公告)日：2024-01-02

申请号：US17123727

申请日：2020-12-16

Applicant: CREE, INC.

Inventor： Saptharishi Sriram ,  Thomas Smith ,  Alexander Suvorov ,  Christer Hallin

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/417 ,  H01L29/40 ,  H01L29/10

CPC classification number: H01L29/7786 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/1066 ,  H01L29/41766

Abstract: An apparatus includes a substrate. The apparatus further includes a group III-nitride buffer layer on the substrate; a group III-nitride barrier layer on the group III-nitride buffer layer, the group III-nitride barrier layer including a higher bandgap than a bandgap of the group III-nitride buffer layer. The apparatus further includes a source electrically coupled to the group III-nitride barrier layer; a gate electrically coupled to the group III-nitride barrier layer; a drain electrically coupled to the group III-nitride barrier layer; and a p-region being at least one of the following: in the substrate or on the substrate below said group III-nitride barrier layer.

公开(公告)号：US20190229187A1

公开(公告)日：2019-07-25

申请号：US16260095

申请日：2019-01-28

Applicant: Cree, Inc.

Inventor： Saptharishi Sriram ,  Thomas Smith

IPC: H01L29/10 ,  H01L29/16 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/778 ,  H01L21/74 ,  H01L29/66

Abstract: The disclosure is directed to a high-electron mobility transistor that includes a SiC substrate layer, a GaN buffer layer arranged on the SiC substrate layer, and a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided. The p-type material layer is provided in one of the following: the SiC substrate layer and a first layer arranged on the SiC substrate layer. A method of making the high-electron mobility transistor is also disclosed.