公开(公告)号：US11862719B2

公开(公告)日：2024-01-02

申请号：US17123727

申请日：2020-12-16

Applicant: CREE, INC.

Inventor： Saptharishi Sriram ,  Thomas Smith ,  Alexander Suvorov ,  Christer Hallin

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/417 ,  H01L29/40 ,  H01L29/10

CPC classification number: H01L29/7786 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/1066 ,  H01L29/41766

Abstract: An apparatus includes a substrate. The apparatus further includes a group III-nitride buffer layer on the substrate; a group III-nitride barrier layer on the group III-nitride buffer layer, the group III-nitride barrier layer including a higher bandgap than a bandgap of the group III-nitride buffer layer. The apparatus further includes a source electrically coupled to the group III-nitride barrier layer; a gate electrically coupled to the group III-nitride barrier layer; a drain electrically coupled to the group III-nitride barrier layer; and a p-region being at least one of the following: in the substrate or on the substrate below said group III-nitride barrier layer.

公开(公告)号：US20140239308A1

公开(公告)日：2014-08-28

申请号：US13775661

申请日：2013-02-25

Applicant: CREE, INC.

Inventor： Christer Hallin ,  Saptharishi Sriram

IPC: H01L29/20 ,  H01L21/36

CPC classification number: H01L29/2003 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02581 ,  H01L29/207 ,  H01L29/66462 ,  H01L29/7787

Abstract: Embodiments of a semi-insulating Group III nitride and methods of fabrication thereof are disclosed. In one embodiment, a semi-insulating Group III nitride layer includes a first doped portion that is doped with a first dopant and a second doped portion that is doped with a second dopant that is different than the first dopant. The first doped portion extends to a first thickness of the semi-insulating Group III nitride layer. The second doped portion extends from approximately the first thickness of the semi-insulating Group III nitride layer to a second thickness of the semi-insulating Group III nitride layer. In one embodiment, the first dopant is Iron (Fe), and the second dopant is Carbon (C). In another embodiment, the semi-insulating Group III nitride layer is a semi-insulating Gallium Nitride (GaN) layer, the first dopant is Fe, and the second dopant is C.

Abstract translation: 公开了半绝缘III族氮化物的实施方案及其制造方法。 在一个实施例中，半绝缘III族氮化物层包括掺杂有第一掺杂剂的第一掺杂部分和掺杂有与第一掺杂剂不同的第二掺杂剂的第二掺杂部分。 第一掺杂部分延伸到半绝缘III族氮化物层的第一厚度。 第二掺杂部分从半绝缘III族氮化物层的大致第一厚度延伸到半绝缘III族氮化物层的第二厚度。 在一个实施方案中，第一掺杂剂是铁（Fe），第二掺杂剂是碳（C）。 在另一个实施例中，半绝缘III族氮化物层是半绝缘氮化镓（GaN）层，第一掺杂剂是Fe，第二掺杂剂是C.

公开(公告)号：US09608085B2

公开(公告)日：2017-03-28

申请号：US13632395

申请日：2012-10-01

Applicant: Cree, Inc.

Inventor： Christer Hallin

IPC: H01L29/778 ,  H01L29/812 ,  H01L29/66 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/7787

Abstract: A predisposed high electron mobility transistor (HEMT) is disclosed. The predisposed HEMT includes a buffer layer, a HEMT channel layer on the buffer layer, a first HEMT barrier layer over the HEMT channel layer, and a HEMT cap layer on the first HEMT barrier layer. The HEMT cap layer has a drain region, a source region, and a gate region. Further, the HEMT cap layer has a continuous surface on the drain region, the source region, and the gate region. When no external voltage is applied between the source region and the gate region, the gate region either depletes carriers from the HEMT channel layer or provides carriers to the HEMT channel layer, thereby selecting a predisposed state of the predisposed HEMT.

公开(公告)号：US09306009B2

公开(公告)日：2016-04-05

申请号：US13775661

申请日：2013-02-25

Applicant: Cree, Inc.

Inventor： Christer Hallin ,  Saptharishi Sriram

IPC: H01L29/15 ,  H01L29/20 ,  H01L21/02 ,  H01L29/66 ,  H01L29/207 ,  H01L29/778

CPC classification number: H01L29/2003 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02581 ,  H01L29/207 ,  H01L29/66462 ,  H01L29/7787

Abstract: Embodiments of a semi-insulating Group III nitride and methods of fabrication thereof are disclosed. In one embodiment, a semi-insulating Group III nitride layer includes a first doped portion that is doped with a first dopant and a second doped portion that is doped with a second dopant that is different than the first dopant. The first doped portion extends to a first thickness of the semi-insulating Group III nitride layer. The second doped portion extends from approximately the first thickness of the semi-insulating Group III nitride layer to a second thickness of the semi-insulating Group III nitride layer. In one embodiment, the first dopant is Iron (Fe), and the second dopant is Carbon (C). In another embodiment, the semi-insulating Group III nitride layer is a semi-insulating Gallium Nitride (GaN) layer, the first dopant is Fe, and the second dopant is C.

Abstract translation: 公开了半绝缘III族氮化物的实施方案及其制造方法。 在一个实施例中，半绝缘III族氮化物层包括掺杂有第一掺杂剂的第一掺杂部分和掺杂有与第一掺杂剂不同的第二掺杂剂的第二掺杂部分。 第一掺杂部分延伸到半绝缘III族氮化物层的第一厚度。 第二掺杂部分从半绝缘III族氮化物层的大致第一厚度延伸到半绝缘III族氮化物层的第二厚度。 在一个实施方案中，第一掺杂剂是铁（Fe），第二掺杂剂是碳（C）。 在另一个实施例中，半绝缘III族氮化物层是半绝缘氮化镓（GaN）层，第一掺杂剂是Fe，第二掺杂剂是C.

公开(公告)号：US20170373178A1

公开(公告)日：2017-12-28

申请号：US15424209

申请日：2017-02-03

Applicant: Cree, Inc.

Inventor： Saptharishi Sriram ,  Alexander Suvorov ,  Christer Hallin

IPC: H01L29/778 ,  H01L29/423 ,  H01L29/20 ,  H01L29/167 ,  H01L29/66 ,  H01L29/16

CPC classification number: H01L29/7787 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42376 ,  H01L29/66068 ,  H01L29/66431 ,  H01L29/7783

Abstract: The disclosure is directed to a high-electron mobility transistor that includes a SiC substrate layer, a GaN buffer layer arranged on the SiC substrate layer, and a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided. The p-type material layer is provided in one of the following: the SiC substrate layer and a first layer arranged on the SiC substrate layer. A method of making the high-electron mobility transistor is also disclosed.

公开(公告)号：US10892356B2

公开(公告)日：2021-01-12

申请号：US16376596

申请日：2019-04-05

Applicant: Cree, Inc.

Inventor： Saptharishi Sriram ,  Thomas Smith ,  Alexander Suvorov ,  Christer Hallin

IPC: H01L27/088 ,  H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/417 ,  H01L29/40 ,  H01L29/10

Abstract: An apparatus includes a substrate. The apparatus further includes a group III-nitride buffer layer on the substrate; a group III-nitride barrier layer on the group III-nitride buffer layer, the group III-nitride barrier layer including a higher bandgap than a bandgap of the group III-nitride buffer layer. The apparatus further includes a source electrically coupled to the group III-nitride barrier layer; a gate electrically coupled to the group III-nitride barrier layer; a drain electrically coupled to the group III-nitride barrier layer; and a p-region being at least one of the following: in the substrate or on the substrate below said group III-nitride barrier layer.

公开(公告)号：US20190237569A1

公开(公告)日：2019-08-01

申请号：US16376596

申请日：2019-04-05

Applicant: Cree, Inc.

Inventor： Saptharishi Sriram ,  Thomas Smith ,  Alexander Suvorov ,  Christer Hallin

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/1087 ,  H01L21/743 ,  H01L21/746 ,  H01L29/1083 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

Abstract: An apparatus includes a substrate. The apparatus further includes a group III-nitride buffer layer on the substrate; a group III-nitride barrier layer on the group III-nitride buffer layer, the group III-nitride barrier layer including a higher bandgap than a bandgap of the group III-nitride buffer layer. The apparatus further includes a source electrically coupled to the group III-nitride barrier layer; a gate electrically coupled to the group III-nitride barrier layer; a drain electrically coupled to the group III-nitride barrier layer; and a p-region being at least one of the following: in the substrate or on the substrate below said group III-nitride barrier layer.

公开(公告)号：US10192980B2

公开(公告)日：2019-01-29

申请号：US15424209

申请日：2017-02-03

Applicant: Cree, Inc.

Inventor： Saptharishi Sriram ,  Alexander Suvorov ,  Christer Hallin

IPC: H01L29/788 ,  H01L29/66 ,  H01L29/16 ,  H01L29/20 ,  H01L29/167 ,  H01L29/423 ,  H01L29/778 ,  H01L29/10 ,  H01L29/40

Abstract: The disclosure is directed to a high-electron mobility transistor that includes a SiC substrate layer, a GaN buffer layer arranged on the SiC substrate layer, and a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided. The p-type material layer is provided in one of the following: the SiC substrate layer and a first layer arranged on the SiC substrate layer. A method of making the high-electron mobility transistor is also disclosed.