公开(公告)号：US20180197591A1

公开(公告)日：2018-07-12

申请号：US15741805

申请日：2016-06-27

Applicant: CROCUS Technology SA

Inventor： Quentin STAINER

IPC: G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01F10/32

CPC classification number: G11C11/1673 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory device including a plurality of magnetic units, each unit including a first and second magnetic tunnel junctions-electrically connected in series by a current line and a strap. Each junction includes a first and second storage layer having a first and second storage magnetization and a first sense magnetic layer having a first and second senses magnetization. A field line is configured to provide an input signal generating a first and second magnetic field for varying the first and second sense magnetization. Each magnetic unit is provided with a data state such that the first and second storage magnetizations are aligned in opposed directions. The first and second magnetic field are adapted for varying respectively the first and second sense magnetization in a first and second direction opposed to the first direction.

公开(公告)号：US20170076771A1

公开(公告)日：2017-03-16

申请号：US15309229

申请日：2015-04-23

Applicant: CROCUS Technology SA

Inventor： Quentin STAINER

IPC: G11C11/16 ,  G11C11/56

CPC classification number: G11C11/161 ,  G11C11/15 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/5607

Abstract: A multi-bit magnetic random access memory (MRAM) cell including a magnetic tunnel junction including: a first magnetic storage layer, a second magnetic storage layer, a magnetic sense layer, a first spacer layer between the first magnetic storage layer and the magnetic sense layer, and a second spacer layer between the second magnetic storage layer and the sense layer. The first and second storage magnetization are switchable between m directions to store data corresponding to one of m2 logic states, with m>2. The present disclosure further concerns a method for writing and reading to the MRAM cell and to memory devices including multi-bit MRAM cells.

Abstract translation: 一种包括磁性隧道结的多位磁随机存取存储器（MRAM）单元，包括：第一磁存储层，第二磁存储层，磁感应层，第一磁存储层与​​磁感应之间的第一间隔层 层，以及在第二磁存储层和感测层之间的第二间隔层。 第一和第二存储磁化可在m个方向之间切换以存储对应于m2逻辑状态之一的数据，其中m> 2。 本公开还涉及用于写入和读取到MRAM单元和包括多位MRAM单元的存储器件的方法。