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公开(公告)号：US09834437B2
公开(公告)日：2017-12-05
申请号：US15327230
申请日：2015-07-31
发明人： Errong Jing
CPC分类号： B81C1/00182 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81B2203/058 , B81C1/00603 , B81C2201/0109 , B81C2201/0111
摘要： A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate, wherein the substrate comprises a first silicon layer, a buried oxide layer and a second silicon layer that are laminated sequentially; patterning the first silicon layer and exposing the buried oxide layer to form a rectangular upper electrode plate separated from a peripheral region, wherein the upper electrode plate and the peripheral region are connected by only using a cantilever beam, and forming, on the peripheral region, a recessed portion exposing the buried oxide layer; patterning the second silicon layer and exposing the buried oxide layer to form a back cavity, wherein the back cavity is located in a region of the second silicon layer corresponding to the upper electrode plate, covers 40% to 60% of the area of the region corresponding to the upper electrode plate, and is close to one end of the cantilever beam; exposing the second silicon layer, and suspending the upper electrode plate and the cantilever beam; and respectively forming an upper contact electrode and a lower contact electrode on the second silicon layer.
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公开(公告)号：US09862595B2
公开(公告)日：2018-01-09
申请号：US15023057
申请日：2014-12-04
发明人： Errong Jing
CPC分类号： B81C1/00142 , B81C2201/0108 , B81C2201/0109 , B81C2201/013
摘要： A method for manufacturing a film support beam includes: providing a substrate having opposed first and second surfaces; coating a sacrificial layer on the first surface of the substrate, and patterning the sacrificial layer; depositing a dielectric film on the sacrificial layer to form a dielectric film layer, and depositing a metal film on the dielectric film layer to form a metal film layer; patterning the metal film layer, and dividing a patterned area of the metal film layer into a metal film pattern of a support beam portion and a metal film pattern of a non-support beam portion, wherein a width of the metal film pattern of the support beam portion is greater than a width of a final support beam pattern, and a width of the metal film pattern of the non-support beam portion is equal to a width of a width of a final non-support beam pattern at the moment; photoetching and etching on the metal film layer and the dielectric film layer to obtain the final support beam pattern, the final non-support beam pattern and a final dielectric film layer, wherein the final dielectric film layer serves as a support film of the final support beam pattern and the final non-support beam pattern; and removing the sacrificial layer.
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3.发明授权公开(公告)号：US10301175B2
公开(公告)日：2019-05-28
申请号：US15327902
申请日：2015-08-20
发明人： Errong Jing
摘要： A method for manufacturing a MEMS double-layer suspension microstructure comprises steps of: forming a first film body on a substrate, and a cantilever beam connected to the substrate and the first film body; forming a sacrificial layer on the first film body and the cantilever beam; patterning the sacrificial layer located on the first film body to manufacture a recessed portion used for forming a support structure, the bottom of the recessed portion being exposed of the first film body; depositing a dielectric layer on the sacrificial layer; patterning the dielectric layer to manufacture a second film body and the support structure, the support structure being connected to the first film body and the second film body; and removing the sacrificial layer to obtain the MEMS double-layer suspension microstructure.
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公开(公告)号：US09902613B2
公开(公告)日：2018-02-27
申请号：US15315640
申请日：2015-08-19
发明人： Errong Jing
CPC分类号： B81C3/004 , B81C1/00 , B81C1/00603 , B81C3/00 , B81C2203/051 , G03F9/00 , H01L21/68
摘要： A positioning method in a microprocessing process of bulk silicon comprises the steps of: fabricating, on a first surface of a first substrate (10), a first pattern (100), a stepper photo-etching machine alignment mark (200) for positioning the first pattern, and a double-sided photo-etching machine first alignment mark (300) for positioning the stepper photo-etching machine alignment mark; fabricating, on a second surface, opposite to the first surface, of the first substrate, a double-sided photo-etching machine second alignment mark (400) corresponding to the double-sided photo-etching machine first alignment mark; bonding a second substrate (20) on the first surface of the first substrate; performing thinning on a first surface of the second substrate; fabricating, on the first surface of the second substrate, a double-sided photo-etching machine third alignment mark (500) corresponding to the double-sided photo-etching machine second alignment mark; and finding, on the first surface of the second substrate by using the double-sided photo-etching machine third alignment mark, a corresponding position of the stepper photo-etching machine alignment mark.
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