公开(公告)号：US10014392B2

公开(公告)日：2018-07-03

申请号：US15564172

申请日：2016-01-29

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Shukun Qi ,  Guangsheng Zhang ,  Guipeng Sun ,  Sen Zhang

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66681 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0696 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7823 ,  H01L29/7835

Abstract: Provided is a laterally diffused metal-oxide-semiconductor field-effect transistor, comprising a substrate (110), a source (150), a drain (140), a body region (160), a P-type field-limiting ring (135), and a well region on the substrate (110); the well region comprises an inserted well (122), which has P-type doping and is disposed below the drain and connected to the drain; N wells (124) disposed at the two sides of the inserted well (122); a P well (126) disposed next to the N well (124) and connected to the N well (124); a P-type field-limiting ring (135), which is disposed inside the N well (124), is a closed ring-shaped structure, and is located at the periphery below the drain (140); the inserted well (122) extends in its longitudinal direction to the position where it is in contact with said P-type field-limiting ring (135); the source (150) and the body region (160) are disposed inside the P well (126).

公开(公告)号：US11309406B2

公开(公告)日：2022-04-19

申请号：US16770362

申请日：2018-12-05

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Nailong He ,  Sen Zhang ,  Guangsheng Zhang ,  Yun Lan

IPC: H01L29/66 ,  H01L21/762 ,  H01L29/417 ,  H01L21/033 ,  H01L29/06 ,  H01L29/78 ,  H01L29/423

Abstract: A manufacturing method of an LDMOS device comprises: obtaining a wafer formed with a doped region having a first conductivity type, wherein a top buried layer is formed inside the doped region having the first conductivity type, and a field oxide insulation layer structure is formed on the top buried layer; disposing a trench on the doped region having the first conductivity type, wherein the trench extends to the top buried layer and the field oxide insulation layer structure such that a portion of the top buried layer is removed; injecting an ion of a second conductivity type to form a well region below the trench; and forming a doped source region in the well region. The first conductivity type and the second conductivity type are opposite conductivity types.