公开(公告)号：US20030082998A1

公开(公告)日：2003-05-01

申请号：US10044174

申请日：2002-01-11

Applicant: Cabot Microelectronics Corporation

Inventor： Phillip Carter ,  Gregory H. Bogush ,  Francesco M. De Rege ,  Jeffrey P. Chamberlain ,  David J. Schroeder ,  Brian L. Mueller

IPC: B24B001/00

CPC classification number: C09G1/02 ,  C09K3/1463 ,  C09K3/1472

Abstract: The invention provides a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, wherein the total ion concentration of the system is above the critical coagulation concentration. The invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a the aforementioned polishing system or a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, and polishing at least a portion of the substrate therewith in about 6 hours or less after the polishing system is prepared.

Abstract translation: 本发明提供了一种抛光系统，其包括（a）液体载体，（b）碱金属离子，（c）包含胺基和至少一个极性部分的化合物，其中极性部分含有至少一个氧原子，和 （d）抛光垫和/或研磨剂，其中系统的总离子浓度高于临界凝结浓度。 本发明还提供了一种平面化或抛光复合衬底的方法，包括使衬底与上述抛光系统或抛光系统接触，所述抛光系统或抛光系统包括（a）液体载体，（b）碱金属离子，（c） 胺基团和至少一个极性部分，其中极性部分含有至少一个氧原子，和（d）抛光垫和/或研磨剂，并且在约6小时或更少的时间内在约6小时或更少的时间内研磨至少一部分基材 准备抛光系统。