公开(公告)号：US20100032094A1

公开(公告)日：2010-02-11

申请号：US12441429

申请日：2008-08-20

申请人： Caizhong Tian ,  Tetsuya Nishizuka ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Tetsuya Nishizuka ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： H01L21/306 ,  C23C16/54

CPC分类号： H01L21/461 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  H05H1/46 ,  Y10T428/24273

摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions provided in a radial pattern on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.

摘要翻译： 公开了一种设置在可以被抽真空的处理室的顶部的顶板。 顶棚板允许从天花板板设置的平面天线构件的槽口发射的微波通过顶板进入处理室，并且包括在天花板的表面上以放射状图案设置的多个突起部分， 表面朝向处理室的内部。

公开(公告)号：US20080254220A1

公开(公告)日：2008-10-16

申请号：US12157660

申请日：2008-06-11

申请人： Caizhong Tian ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

发明人： Caizhong Tian ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

IPC分类号： B05D3/04 ,  C23C16/452 ,  H01L21/3065

CPC分类号： B32B37/12 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32623 ,  H01J2237/0206 ,  Y10T156/10

摘要： A plasma processing apparatus includes a vacuum processing container, and a placing table for placing an object which is arranged in the container and is to be processed. The processing container includes a tubular container body having an upper opening, and a dielectric top plate attached hermetically to the upper opening of the body and transmitting an electromagnetic wave. The plasma processing apparatus further includes an electromagnetic wave supplying system for supplying an electromagnetic wave for generating plasma into the container through the top plate, and a gas supplying system for supplying a gas containing a processing gas into the container. A gas ejecting hole for ejecting the gas supplied from the gas supplying system into the container is formed on the top plate. A discharge prevention member having a permeability is arranged in each ejection hole.

摘要翻译： 等离子体处理装置包括真空处理容器和放置在容器内并被处理的物体的放置台。 处理容器包括具有上开口的管状容器主体和与主体的上开口气密连接并传输电磁波的电介质顶板。 等离子体处理装置还包括电磁波供给系统，用于通过顶板将用于产生等离子体的电磁波提供到容器中;以及气体供给系统，用于将含有处理气体的气体供给到容器中。 在顶板上形成用于将从供气系统供给的气体喷射到容器中的气体喷射孔。 在每个喷射孔中布置具有磁导率的防止放电部件。

公开(公告)号：US20110000780A1

公开(公告)日：2011-01-06

申请号：US12867343

申请日：2009-02-10

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： H05H1/46

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32238

摘要： A plasma generation chamber of a plasma processing apparatus is closed by a top plate 3. The top plate 3 has recesses 3A on its surface facing the plasma generation chamber and a central recess 3B on an opposite surface. The top plate 3 is coupled to an antenna thereon. If a microwave is supplied to the antenna, the microwave is radiated through slots of the antenna. The microwave is propagated through the top plate 3 such that the microwave has a plane of polarization and the microwave forms a circularly polarized wave as a whole. Here, resonance absorption of the microwave occurs at a side surface of recesses 3A and the microwave is propagated within the recesses 3A in a single mode. Strong plasma can be generated within each of the recesses 3A, so that a stable plasma mode can be generated in the top plate 3.

摘要翻译： 等离子体处理装置的等离子体生成室由顶板3封闭。顶板3在其表面上具有面向等离子体产生室的凹部3A和位于相对表面上的中心凹部3B。 顶板3与天线耦合。 如果向天线提供微波，则微波通过天线的狭槽辐射。 微波通过顶板3传播，使得微波具有偏振面，微波整体形成圆偏振波。 这里，微波的共振吸收发生在凹部3A的侧面，微波在单个模式下在凹部3A内传播。 可以在每个凹部3A内产生强等离子体，从而可以在顶板3中产生稳定的等离子体模式。

公开(公告)号：US20090183677A1

公开(公告)日：2009-07-23

申请号：US12357493

申请日：2009-01-22

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： B05C9/14

CPC分类号： H01L21/67248 ,  H01L21/67098

摘要： Provided are a temperature control device capable of performing a temperature control of, e.g., a chamber wall of a processing apparatus with a high precision; and a processing apparatus using the same. The temperature control device 50 includes a plurality of heater units 51 for heating each of a multiplicity of zones 55 into which a wall portion of a housing 2 of a chamber 1 is divided; a multiplicity of heater power supplies 52 for supplying power to each of the plurality of heater units 51; a number of thermocouples 53 for measuring the temperature of each of the multiplicity of zones 55; and a plurality of controllers 54 for controlling a corresponding power supply unit by an ILQ control based on a signal from each temperature sensor to set a temperature of a corresponding zone to a preset target temperature.

摘要翻译： 提供一种温度控制装置，其能够以高精度执行例如处理装置的室壁的温度控制; 以及使用该处理装置的处理装置。 温度控制装置50包括多个加热器单元51，用于加热腔室1的壳体2的壁部被分割成的多个区域55中的每一个; 用于向多个加热器单元51中的每一个供电的多个加热器电源52; 用于测量多个区域55中的每一个的温度的多个热电偶53; 以及多个控制器54，用于通过基于来自每个温度传感器的信号的ILQ控制来控制相应的电源单元，以将相应区域的温度设定为预设的目标温度。

公开(公告)号：US20080035058A1

公开(公告)日：2008-02-14

申请号：US11632779

申请日：2005-07-21

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

IPC分类号： H05H1/46 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211

摘要： The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.

摘要翻译： 本发明提供一种等离子体处理单元，包括：处理容器，其顶部具有开口，能够在其中产生真空; 设置在处理容器中的用于在其上放置待处理物体的台阶; 由电介质制成的顶板，顶板气密地装配在开口中并允许微波通过; 平面天线部件，其设置在所述顶板上，所述平面天线部件设置有多个微波辐射孔，用于向所述处理容器的内部放射用于等离子体产生的微波; 设置在所述平面天线构件上的慢波构件，用于缩短微波的波长; 以及微波干扰抑制部，其设置在所述顶板的下表面上，所述微波干涉抑制部将所述下表面分割为多个同心区域，并抑制所述区域之间的微波干扰。

公开(公告)号：US08967080B2

公开(公告)日：2015-03-03

申请号：US12867343

申请日：2009-02-10

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32238

摘要： A plasma generation chamber of a plasma processing apparatus is closed by a top plate 3. The top plate 3 has recesses 3A on its surface facing the plasma generation chamber and a central recess 3B on an opposite surface. The top plate 3 is coupled to an antenna thereon. If a microwave is supplied to the antenna, the microwave is radiated through slots of the antenna. The microwave is propagated through the top plate 3 such that the microwave has a plane of polarization and the microwave forms a circularly polarized wave as a whole. Here, resonance absorption of the microwave occurs at a side surface of recesses 3A and the microwave is propagated within the recesses 3A in a single mode. Strong plasma can be generated within each of the recesses 3A, so that a stable plasma mode can be generated in the top plate 3.

摘要翻译： 等离子体处理装置的等离子体生成室由顶板3封闭。顶板3在其表面上具有面向等离子体产生室的凹部3A和相对表面上的中心凹部3B。 顶板3与天线耦合。 如果向天线提供微波，则微波通过天线的狭槽辐射。 微波通过顶板3传播，使得微波具有偏振面，微波整体形成圆偏振波。 这里，微波的共振吸收发生在凹部3A的侧面，微波在单个模式下在凹部3A内传播。 可以在每个凹部3A内产生强等离子体，从而可以在顶板3中产生稳定的等离子体模式。

公开(公告)号：US08387560B2

公开(公告)日：2013-03-05

申请号：US11632779

申请日：2005-07-21

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211

摘要： The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.

摘要翻译： 本发明提供一种等离子体处理单元，包括：处理容器，其顶部具有开口，能够在其中产生真空; 设置在处理容器中的用于在其上放置待处理物体的台阶; 由电介质制成的顶板，顶板气密地装配在开口中并允许微波通过; 平面天线部件，其设置在所述顶板上，所述平面天线部件设置有多个微波辐射孔，用于朝向所述处理容器的内部放射用于等离子体产生的微波; 设置在所述平面天线构件上的慢波构件，用于缩短微波的波长; 以及微波干扰抑制部，其设置在所述顶板的下表面上，所述微波干涉抑制部将所述下表面分割为多个同心区域，并抑制所述区域之间的微波干扰。

公开(公告)号：US08343308B2

公开(公告)日：2013-01-01

申请号：US12441429

申请日：2008-08-20

申请人： Caizhong Tian ,  Tetsuya Nishizuka ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Tetsuya Nishizuka ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/461 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  H05H1/46 ,  Y10T428/24273

摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural concave portions provided along a circle on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.

摘要翻译： 公开了一种设置在可以被抽真空的处理室的顶部的顶板。 顶板允许从天花板板一侧设置的平面天线构件的槽口发出的微波通过顶板进入处理室，并且包括沿着顶板的表面沿着圆形设置的多个凹部， 面向处理室的内部。

公开(公告)号：US20100252412A1

公开(公告)日：2010-10-07

申请号：US12681434

申请日：2008-10-02

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： H05H1/46

CPC分类号： H01J37/32192 ,  H01J37/32266 ,  H05H1/46

摘要： In the plasma processing apparatus 1, microwaves supplied from a coaxial waveguide 30 are introduced into a processing container 2 via a wavelength-shortening plate 25, a process gas is plasmatized in the processing container 2, and a substrate W is processed using the plasma. In the plasma processing apparatus 1, a dielectric member 45 is disposed at a connecting area between the coaxial waveguide 30 and the wavelength-shortening plate 25. Inside an outer conductor 32 of the coaxial waveguide 30, the dielectric member 45 is disposed to surround a part of a circumference of an inner conductor 31 of the coaxial waveguide 30, and is disposed at any position around the circumference of the inner conductor 31.

摘要翻译： 在等离子体处理装置1中，从同轴波导管30供给的微波通过波长缩短板25被引入到处理容器2中，处理气体在处理容器2中被等离子化，基板W使用等离子体进行处理。 在等离子体处理装置1中，电介质部件45配置在同轴波导30与波长缩短板25之间的连接区域。在同轴波导管30的外部导体32的内部，电介质部件45 同轴波导30的内部导体31的圆周的一部分，并且设置在内部导体31的周围的任何位置。

公开(公告)号：US20080190560A1

公开(公告)日：2008-08-14

申请号：US11885625

申请日：2006-02-21

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa ,  Nobuhiko Yamamoto

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa ,  Nobuhiko Yamamoto

IPC分类号： H01L21/3065 ,  C23C16/453

CPC分类号： H01L21/67069 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238

摘要： The present invention is a microwave plasma processing apparatus comprising: a chamber in which an object to be processed is housed; a process gas supply unit that supplies a process gas into the chamber; a microwave generating source that generates a microwave for forming a plasma due to the process gas in the chamber; a waveguide unit that guides the microwave generated by the microwave generating source toward the chamber; a planar antenna made of a conductive material provided with a plurality of microwave radiating holes for radiating the microwave guided by the waveguide unit toward the chamber; a microwave transmitting plate made of a dielectric material, the microwave transmitting plate serving as a top wall of the chamber and transmitting the microwave that has passed through the microwave radiating holes of the planar antenna; and a slow-wave plate disposed on an opposite side of the planar antenna relative to the microwave transmitting plate, the slow-wave plate having a function of shortening a wavelength of the microwave that reaches the planar antenna. The planar antenna and the microwave transmitting plate are in contact with each other, with substantially no air therebetween, the slow-wave plate and the microwave transmitting plate are made of the same material, and an equivalent circuit formed by the slow-wave plate, the planar antenna, the microwave transmitting plate, and the plasma due to the process gas formed in the chamber satisfies a resonance condition.

摘要翻译： 本发明是微波等离子体处理装置，其特征在于，包括：容纳被加工物的室; 处理气体供应单元，其将处理气体供应到所述室中; 微波发生源，其产生由于所述室中的处理气体而形成等离子体的微波; 波导单元，其将由微波发生源产生的微波引导到所述室; 由导电材料制成的平面天线，设置有用于将由波导单元引导的微波辐射到腔室的多个微波辐射孔; 由电介质材料制成的微波透射板，所述微波透射板用作所述室的顶壁，并且透过已经穿过所述平面天线的微波辐射孔的微波; 以及相对于微波透射板设置在平面天线的相反侧的慢波板，该慢波板具有缩短到达平面天线的微波的波长的功能。 平面天线和微波透射板彼此接触，基本上没有空气，慢波板和微波透射板由相同的材料制成，并且由慢波板形成的等效电路， 由于在室内形成的工艺气体，平面天线，微波透射板和等离子体满足谐振条件。