Sensor geometry for improved package stress isolation
    1.
    发明申请
    Sensor geometry for improved package stress isolation 有权
    传感器几何形状,用于改进封装应力隔离

    公开(公告)号:US20090096040A1

    公开(公告)日:2009-04-16

    申请号:US11973966

    申请日:2007-10-11

    IPC分类号: H01L29/84 H01L21/50

    摘要: The sensor geometry for improved package stress isolation is disclosed. A counterbore on the backing plate improves stress isolation properties of the sensor. The counterbore thins the wall of the backing plate maintaining the contact area with the package. The depth and diameter of the counterbore can be adjusted to find geometry for allowing the backing plate to absorb more package stresses. Thinning the wall of the backing plate make it less rigid and allows the backing plate to absorb more of the stresses produced at the interface with the package. The counterbore also keeps a large surface area at the bottom of the backing plate creating a strong bond with the package.

    摘要翻译: 公开了用于改进封装应力隔离的传感器几何形状。 背板上的沉孔提高了传感器的应力隔离性能。 沉头孔沉浸在背板的壁上,保持与包装件的接触面积。 可以调节沉孔的深度和直径以找到允许背板吸收更多包装应力的几何形状。 使背板的壁变薄使其较不刚性,并且允许背板吸收在与封装的界面处产生的更多的应力。 沉孔还在背板的底部保持较大的表面积,从而与包装形成牢固的结合。

    Small gauge pressure sensor using wafer bonding and electrochemical etch stopping
    2.
    发明授权
    Small gauge pressure sensor using wafer bonding and electrochemical etch stopping 有权
    使用晶圆接合和电化学蚀刻停止的小型压力传感器

    公开(公告)号:US07493822B2

    公开(公告)日:2009-02-24

    申请号:US11825237

    申请日:2007-07-05

    IPC分类号: G01L9/06

    CPC分类号: G01L9/0042 G01L9/0054

    摘要: A gauge pressure sensor apparatus and a method of forming the same. A constraint wafer can be partially etched to set the diaphragm size, followed by bonding to a top wafer. The thickness of the top wafer is either the desired diaphragm thickness or is thinned to the desired thickness after bonding. The bonding of top wafer and constraint wafer enables electrochemical etch stopping. This allows the media conduit to be etched through the back of the constraint wafer and an electrical signal produced when the etching reaches the diaphragm. The process prevents the diaphragm from being over-etched. The invention allows the die size to be smaller than die where the diaphragm size is set by etching from the back side.

    摘要翻译: 表压传感器装置及其形成方法。 可以部分地蚀刻约束晶片以设置膜片尺寸,然后粘结到顶部晶片。 顶部晶片的厚度是所需的隔膜厚度,或者在粘结后被减薄到所需的厚度。 顶部晶片和约束晶片的结合使得电化学蚀刻停止。 这允许介质管道被蚀刻通过约束晶片的背面和当蚀刻到达隔膜时产生的电信号。 该过程防止隔膜过度蚀刻。 本发明允许模具尺寸小于通过从背面蚀刻设置膜片尺寸的模具。

    Sensor geometry for improved package stress isolation
    3.
    发明授权
    Sensor geometry for improved package stress isolation 有权
    传感器几何形状,用于改进封装应力隔离

    公开(公告)号:US07798010B2

    公开(公告)日:2010-09-21

    申请号:US11973966

    申请日:2007-10-11

    IPC分类号: G01L1/00

    摘要: The sensor geometry for improved package stress isolation is disclosed. A counterbore on the backing plate improves stress isolation properties of the sensor. The counterbore thins the wall of the backing plate maintaining the contact area with the package. The depth and diameter of the counterbore can be adjusted to find geometry for allowing the backing plate to absorb more package stresses. Thinning the wall of the backing plate make it less rigid and allows the backing plate to absorb more of the stresses produced at the interface with the package. The counterbore also keeps a large surface area at the bottom of the backing plate creating a strong bond with the package.

    摘要翻译: 公开了用于改进封装应力隔离的传感器几何形状。 背板上的沉孔提高了传感器的应力隔离性能。 沉头孔沉浸在背板的壁上,保持与包装件的接触面积。 可以调节沉孔的深度和直径以找到允许背板吸收更多包装应力的几何形状。 使背板的壁变薄使其较不刚性,并且允许背板吸收在与封装的界面处产生的更多的应力。 沉孔还在背板的底部保持较大的表面积,从而与包装形成牢固的结合。

    Method to reduce die edge shorting on pressure sensors using conductive elastomeric seals
    4.
    发明授权
    Method to reduce die edge shorting on pressure sensors using conductive elastomeric seals 有权
    使用导电弹性体密封件减少压力传感器上的模头边缘短路的方法

    公开(公告)号:US07343812B2

    公开(公告)日:2008-03-18

    申请号:US11453509

    申请日:2006-06-15

    IPC分类号: G01L7/00

    摘要: A pressure sensor includes a sensing element fabricated on an N-type epitaxial layer grown on a P-type substrate, a P-type isolation region located around the edge of the sensing element die and in contact with the P-type substrate, and a conductive elastomeric seal engaging the P-type isolation region prevents shorting of the conductive elastomeric seal with the N-type epitaxial layer of the sensing element die. A method of making a pressure sensor comprises growing an n-type epitaxy layer on a p-type substrate wafer, resulting in a pressure sensor die and substrate having an edge, obtaining a mask adapted for fabricating an isolation diffusion layer around the edge using P-type material, and creating an isolation layer diffusion using P-type doping material around the edge using the mask. A conductive elastomeric seal can then be placed over the sensor die to make electrical contact to the package.

    摘要翻译: 压力传感器包括制造在P型衬底上生长的N型外延层上的感测元件,位于感测元件裸片的边缘周围并与P型衬底接触的P型隔离区,以及 接合P型隔离区域的导电弹性体密封件防止导电弹性体密封件与感测元件裸片的N型外延层短路。 一种制造压力传感器的方法包括在p型衬底晶片上生长n型外延层,从而产生具有边缘的压力传感器管芯和衬底,获得适于使用P制造围绕边缘的隔离扩散层的掩模 并使用掩模在边缘周围使用P型掺杂材料产生隔离层扩散。 然后可以将导电弹性体密封件放置在传感器管芯上方以与封装件电接触。

    Top side reference cavity for absolute pressure sensor
    5.
    发明授权
    Top side reference cavity for absolute pressure sensor 有权
    绝对压力传感器顶侧参考腔

    公开(公告)号:US06923069B1

    公开(公告)日:2005-08-02

    申请号:US10967536

    申请日:2004-10-18

    申请人: Carl E. Stewart

    发明人: Carl E. Stewart

    IPC分类号: G01L9/00

    CPC分类号: G01L9/0054 G01L9/0042

    摘要: A pressure sensor includes a silicon diaphragm having bottom and topside surfaces. The bottom surface has been formed using methods known to those skilled in the art. A first layer is formed and patterned on the topside surface of the diaphragm having an area larger than the diaphragm. A second layer is formed and patterned over the first layer, the second layer being larger in area than the first layer. Holes formed in the second layer are used to remove the first layer using methods known to those skilled in the art. A third layer is formed and patterned over the second layer. The third layer seals the holes in the second layer creating a sealed cavity with a reference pressure on the topside surface of the diaphragm. During operation, media is applied to the bottom surface of the diaphragm wherein the media pressure can be sensed by the pressure sensor in relation to the reference pressure sealed on the topside of the diaphragm.

    摘要翻译: 压力传感器包括具有底部和顶侧表面的硅隔膜。 已经使用本领域技术人员已知的方法形成底表面。 第一层在隔膜的上表面上形成并图案化,其面积大于隔膜。 在第一层上形成并图案化第二层,第二层的面积大于第一层。 使用第二层中形成的孔用于使用本领域技术人员已知的方法去除第一层。 在第二层上形成并图案化第三层。 第三层密封第二层中的孔,形成在隔膜的顶面上具有参考压力的密封腔。 在操作期间,介质被施加到隔膜的底表面,其中介质压力可以被压力传感器相对于密封在隔膜顶部上的参考压力感测。

    Pressure transducer with differential amplifier
    6.
    发明授权
    Pressure transducer with differential amplifier 有权
    带差动放大器的压力传感器

    公开(公告)号:US07493823B2

    公开(公告)日:2009-02-24

    申请号:US11455040

    申请日:2006-06-16

    IPC分类号: G01L9/00

    摘要: A semiconductor-based pressure sensor adapted for enhanced operation with controls electronics includes a pressure transducer having an output formed on a silicon die and an amplifier having an input and an output and fabricated on the silicon die next to the pressure transducer. The pressure transducer's output is provided to the amplifier's input via electrical connection. Output from the amplifier is connectable to a controller such as an ASIC.

    摘要翻译: 适用于通过控制电子装置增强操作的基于半导体的压力传感器包括具有形成在硅管芯上的输出的压力传感器和具有输入和输出的放大器,并且在压缩换能器旁边的硅管芯上制造。 压力传感器的输出通过电气连接提供给放大器的输入。 放大器的输出可连接到诸如ASIC的控制器。

    Pressure sensor with silicon frit bonded cap
    7.
    发明授权
    Pressure sensor with silicon frit bonded cap 有权
    带硅玻璃料的压力传感器

    公开(公告)号:US07216547B1

    公开(公告)日:2007-05-15

    申请号:US11328415

    申请日:2006-01-06

    IPC分类号: G01L7/00

    CPC分类号: G01L9/0055 G01L9/0042

    摘要: A pressure sensor apparatus and method that incorporates a silicon frit bonded cap. The pressure sensor includes a silicon sensor wafer with diaphragms at a bottom surface thereof, a silicon cap wafer mounted on the topside of each sensor wafer, a plurality of silicon sensor die formed on the sensor wafer, a silicon cap wafer etched to create a plurality of reference cavities on the topside of the diaphragm, a thin glass frit to form a wafer-to-wafer bond between the sensor wafer and cap wafer. Sensing devices such as semiconductor die/sensor, peizoresistors, can be used to sense the pressure. The wafer-to-wafer frit bonding improves the output signal drift and the thermal performance of the pressure sensor minimizes the thermal mismatch created by anodic bonded glass wafers.

    摘要翻译: 一种压力传感器装置和方法,其包括硅玻璃料接合盖。 压力传感器包括在其底表面上具有隔膜的硅传感器晶片,安装在每个传感器晶片顶部的硅盖晶片,形成在传感器晶片上的多个硅传感器管芯,被蚀刻以形成多个 的薄膜玻璃料,以在传感器晶片和盖子晶片之间形成晶片与晶片的结合。 可以使用诸如半导体管芯/传感器,传感器等感测装置感测压力。 晶圆到晶片的玻璃料粘合改善了输出信号漂移,并且压力传感器的热性能使由阳极粘合玻璃晶片产生的热失配最小化。

    Offset pressure sensor
    8.
    发明授权
    Offset pressure sensor 失效
    偏置压力传感器

    公开(公告)号:US5412994A

    公开(公告)日:1995-05-09

    申请号:US259429

    申请日:1994-06-14

    摘要: A pressure sensor is provided in which the pressure sensing components are isolated from a portion of an attached buffer member which is connected to a fluid conduit. The offset characteristic of the pressure sensor isolates stress from being transmitted between an attached external fluid conduit and the sensitive components of the pressure sensor. One embodiment of the pressure sensor solders a fluid conduit structure to a buffer member that is attached to a pressure sensor die. An alternative embodiment of the present invention avoids the need for making solder connections between the sensor structure and external components by utilizing elastomeric conductors and pressure seals in association with the pressure sensor composite structure and first and second housing structures. These elastomeric conductors also provide improved stress isolation. The housing structures are used to compress to the seal and the elastomeric conductor against selected portions of the composite sensor.

    摘要翻译: 提供了压力传感器,其中压力感测部件与连接到流体导管的连接的缓冲部件的一部分隔离。 压力传感器的偏移特性将应力隔离在附接的外部流体管道和压力传感器的敏感部件之间传递。 压力传感器的一个实施例将流体导管结构焊接到附接到压力传感器管芯的缓冲构件。 本发明的替代实施例避免了通过利用与压力传感器复合结构和第一和第二壳体结构相关联的弹性体导体和压力密封来进行传感器结构和外部部件之间的焊接连接的需要。 这些弹性体导体也提供改进的应力隔离。 壳体结构用于压缩密封件和弹性体导体,以抵抗复合传感器的选定部分。

    Sensor geometry for improved package stress isolation
    9.
    发明授权
    Sensor geometry for improved package stress isolation 有权
    传感器几何形状,用于改进封装应力隔离

    公开(公告)号:US08082798B2

    公开(公告)日:2011-12-27

    申请号:US12857380

    申请日:2010-08-16

    IPC分类号: G01L1/00

    摘要: The sensor geometry for improved package stress isolation is disclosed. A counterbore on the backing plate improves stress isolation properties of the sensor. The counterbore thins the wall of the backing plate maintaining the contact area with the package. The depth and diameter of the counterbore can be adjusted to find geometry for allowing the backing plate to absorb more package stresses. Thinning the wall of the backing plate make it less rigid and allows the backing plate to absorb more of the stresses produced at the interface with the package. The counterbore also keeps a large surface area at the bottom of the backing plate creating a strong bond with the package.

    摘要翻译: 公开了用于改进封装应力隔离的传感器几何形状。 背板上的沉孔提高了传感器的应力隔离性能。 沉头孔沉浸在背板的壁上,保持与包装件的接触面积。 可以调节沉孔的深度和直径以找到允许背板吸收更多包装应力的几何形状。 使背板的壁变薄使其较不刚性,并且允许背板吸收在与封装的界面处产生的更多的应力。 沉孔还在背板的底部保持较大的表面积,从而与包装形成牢固的结合。

    SENSOR GEOMETRY FOR IMPROVED PACKAGE STRESS ISOLATION
    10.
    发明申请
    SENSOR GEOMETRY FOR IMPROVED PACKAGE STRESS ISOLATION 有权
    传感器几何改进包装应力隔离

    公开(公告)号:US20100301435A1

    公开(公告)日:2010-12-02

    申请号:US12857380

    申请日:2010-08-16

    IPC分类号: H01L29/84 H01L21/02 H01L23/12

    摘要: The sensor geometry for improved package stress isolation is disclosed. A counterbore on the backing plate improves stress isolation properties of the sensor. The counterbore thins the wall of the backing plate maintaining the contact area with the package. The depth and diameter of the counterbore can be adjusted to find geometry for allowing the backing plate to absorb more package stresses. Thinning the wall of the backing plate make it less rigid and allows the backing plate to absorb more of the stresses produced at the interface with the package. The counterbore also keeps a large surface area at the bottom of the backing plate creating a strong bond with the package.

    摘要翻译: 公开了用于改进封装应力隔离的传感器几何形状。 背板上的沉孔提高了传感器的应力隔离性能。 沉头孔沉浸在背板的壁上,保持与包装件的接触面积。 可以调节沉孔的深度和直径以找到允许背板吸收更多包装应力的几何形状。 使背板的壁变薄使其较不刚性,并且允许背板吸收在与封装的界面处产生的更多的应力。 沉孔还在背板的底部保持较大的表面积,从而与包装形成牢固的结合。