Abstract:
Production techniques of a reflective optical element for the extreme ultraviolet wavelength range having a multilayer system reflective coating arranged on a substrate. The multilayer system has mutually alternating layers of at least two different materials with different real parts of their refractive indexes at a wavelength in the extreme ultraviolet wavelength range. A layer of one of the at least two materials forms a stack with the layer or layers arranged between the former and the closest layer of the same material with increasing distance from the substrate. At least one layer of the multilayer system is polished during or after deposition thereof, such roughness of the reflective optical element rises significantly less over all layers than in a corresponding reflective optical element with a reflective coating in the form of a multilayer system composed of unpolished layers. The multilayer system may have more than 50 layer stacks.
Abstract:
An optical system, in particular for a microlithographic projection exposure apparatus, with at least one mirror (200) which has an optically effective surface and, for electromagnetic radiation of a predefined operating wavelength impinging on the optically effective surface at an angle of incidence of at least 65° relative to the respective surface normal, has a reflectivity of at least 0.5. The mirror has a reflection layer (210) and a compensation layer (220) which is arranged above this reflection layer (210) in the direction of the optically effective surface. The compensation layer (220), for an intensity distribution generated in a pupil plane or a field plane of the optical system during operation thereof, reduces the difference between the maximum and the minimum intensity value by at least 20% compared to an analogous structure without the compensation layer.
Abstract:
A method and a device for characterizing the surface shape of an optical element. In the method, in at least one interferogram measurement carried out by an interferometric test arrangement, a test wave reflected at the optical element is caused to be superimposed with a reference wave not reflected at the optical element. In this case, the figure of the optical element is determined on the basis of at least two interferogram measurements using electromagnetic radiation having in each case linear input polarization or in each case circular input polarization, wherein the input polarizations for the two interferogram measurements differ from one another.
Abstract:
An EUV mirror has a multilayer arrangement applied on a substrate. The multilayer arrangement includes a first layer group having ten or more first layer pairs. Each first layer pair has a first layer composed of a high refractive index first layer material having a first layer thickness, has a second layer composed of a low refractive index second layer material having a second layer thickness and has a period thickness corresponding to the sum of the layer thicknesses of all the layers of a first layer pair. The layer thicknesses of one of the layer materials are defined, depending on the period number, by a simply monotonic first layer thickness profile function, e.g. by a linear, quadratic or exponential layer thickness profile function. The layer thicknesses of the other of the layer materials vary, depending on the period number, in accordance with a second layer thickness profile function.
Abstract:
An optical arrangement includes an optical element (1) and a thermal manipulation device. The optical element has a substrate (2), a coating (3, 9, 5) applied to the substrate (2), and an antireflection coating (3). The coating (3, 9, 5) includes: a reflective multi-layer coating (5b) configured to reflect radiation (4) with a used wavelength (λEUV). The antireflection coating (3) is arranged between the substrate (2) and the reflective multi-layer coating (5b) to suppress reflection of heating radiation (7) with a heating wavelength (λH) that differs from the used wavelength (λEUV). The thermal manipulation device has at least one heating light source (8) to produce heating radiation (7).
Abstract:
A minor reflecting radiation with an operating wavelength of 5-30 nm, includes a substrate and a reflective coating. The reflective coating includes a first group of layers (19) and a second group (5) of layers, such that the second group of layers is arranged between the substrate and the first group of layers. The first group and the second group of layers comprise a plurality of first and second layers (9, 11). The first layers have a refractive index for radiation having the operating wavelength which is greater than a refractive index of the second layers for radiation having the operating wavelength. A correction layer (13) has a layer thickness variation for correcting the surface form of the minor and is arranged between the second group and the first group of layers. The correction layer contains carbon, sulfur, phosphorus, fluorine or organic compounds thereof, and inorganic metal compounds.
Abstract:
A reflective optical element (50) having a substrate (52) and a multilayer system (51) that has a plurality of partial stacks (53), each with a first layer (54) of a first material and a second layer (55) of a second material. The first material and the second material differ from one another in refractive index at an operating wavelength of the optical element. Each of the partial stacks has a thickness (Di) and a layer thickness ratio (Γi), wherein the layer thickness ratio is the quotient of the thickness of the respective first layer and the partial stack thickness (Di). In a first section of the multilayer system, for at least one of the two variables of partial stack thickness (Di) and layer thickness ratio (Γi), the mean square deviation from the respective mean values therefor is at least 10% less than in a second section of the multilayer system.
Abstract:
A method for correcting a surface form of a mirror (1) for reflecting radiation in the wavelength range of 5-30 nm, which includes: applying a correction layer (13) having a layer thickness variation (21) for correcting the mirror's surface form, and applying a first group (19) of layers to the correction layer. The first group (19) of layers includes first (9) and second (11) layers arranged alternately one above another, wherein the first layers have a refractive index at the operating wavelength which is greater than the refractive index of the second layers for that radiation.The correction layer (13) is applied by: introducing the mirror into an atmosphere including a reaction gas (15), applying a correction radiation (17) having a location-dependent radiation energy density, such that a correction layer having a location-dependent layer thickness variation (21) grows on the mirror's irradiated surface.
Abstract:
Catadioptric projection objective (1) for microlithography for imaging an object field (3) in an object plane (5) onto an image field (7) in an image plane (9). The objective includes a first partial objective (11) imaging the object field onto a first real intermediate image (13), a second partial objective (15) imaging the first intermediate image onto a second real intermediate image (17), and a third partial objective (19) imaging the second intermediate image onto the image field. The second partial objective is a catadioptric objective having exactly one concave mirror and having at least one lens (L21, L22). A first folding mirror (23) deflects the radiation from the object plane toward the concave mirror and a second folding mirror (25) deflects the radiation from the concave mirror toward the image plane. At least one surface of a lens (L21, L22) of the second partial objective has an antireflection coating having a reflectivity of less than 0.1% for an operating wavelength of between 150 nm and 250 nm and for an angle-of-incidence range of between 0° and 30°. As an alternative or in addition, all the surfaces of the lenses of the second partial objective are configured such that the deviation from the marginal ray concentricity is greater than or equal to 20°.