Stacked-dies optically bridged multicomponent package

    公开(公告)号:US12130485B1

    公开(公告)日:2024-10-29

    申请号:US18610431

    申请日:2024-03-20

    申请人: Celestial AI Inc.

    IPC分类号: G02B6/42 G02F1/015

    摘要: An implementation provides a package that includes a first die including a bridging element, an analog/mixed-signal (AMS) die, and a general die. The first die includes: a first photonic transceiver portion, a first die first interconnect region, and an optical interface (OI). The AMS die includes a second photonic transceiver portion, an AMS die first interconnect region on a first surface of the AMS die electrically and physically coupled with the first die first interconnect region; and an AMS die second interconnect region on a second surface of the AMS die. The general die includes a third photonic transceiver portion, and a general die first interconnect region electrically and physically coupled with the second photonic transceiver portion.

    Optical multi-die interconnect bridge with optical interface

    公开(公告)号:US12124095B2

    公开(公告)日:2024-10-22

    申请号:US18243474

    申请日:2023-09-07

    申请人: Celestial AI Inc.

    IPC分类号: G02B6/42 G02B6/43 G02F1/015

    摘要: A package includes a bridging element (an OMIB), and first and second photonic paths, forming a bidirectional photonic path. The OMIB has first and second interconnect regions to connect with one or more dies. Third and fourth unidirectional photonic paths may couple between the first interconnect region and an optical interface (OI). A photonic transceiver has a first portion in the OMIB and a second portion in one of the dies. The first and the second portions may be coupled via an electrical interconnect less than 2 mm in length. The die includes compute elements around a central region, proximate to the second portion. The OMIB may include an electro-absorption modulator fabricated with germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), or a III-V material based on gallium arsenide (GaAs). The OMIB may include a temperature compensation for the modulator.

    ELECTRO-PHOTONIC NETWORK FOR MACHINE LEARNING

    公开(公告)号:US20220405562A1

    公开(公告)日:2022-12-22

    申请号:US17807695

    申请日:2022-06-17

    申请人: Celestial AI Inc.

    IPC分类号: G06N3/067 G06N3/04

    摘要: Various embodiments provide for electro-photonic networks, including a plurality of processing elements connected by bidirectional photonic channels, suited for implementing neural-network models. Weights of the model may be preloaded into memory of the processing elements based on assignments of neural nodes to processing elements implementing them, and routers of the processing elements can be configured to stream activations between the processing elements based on a predetermined flow of activations in the model.

    HYBRID ELECTRO-PHOTONIC NETWORK-ON-CHIP

    公开(公告)号:US20220404544A1

    公开(公告)日:2022-12-22

    申请号:US17807692

    申请日:2022-06-17

    申请人: Celestial AI Inc.

    IPC分类号: G02B6/12 G02B6/30 G02B6/43

    摘要: Various embodiments provide for a circuit package including an electronic integrated circuit comprising a plurality of processing elements, and a plurality of bidirectional photonic channels, e.g., implemented in a photonic integrated circuit underneath the electronic integrated circuit, that connect the processing elements into an electro-photonic network. The processing elements include message routers with photonic-channel interfaces. Each bidirectional photonic channel interfaces at one end with a photonic-channel interface of the message router of a first one of the processing elements and at the other end with a photonic-channel interface of the message router of a second one of the processing elements and is configured to optically transfer messages (e.g., packets) between the message routers of the first and second processing elements.