公开(公告)号：US20050181630A1

公开(公告)日：2005-08-18

申请号：US10779007

申请日：2004-02-13

申请人： Cesar Garza ,  William Darlington ,  Stanley Filipiak ,  James Vasek

发明人： Cesar Garza ,  William Darlington ,  Stanley Filipiak ,  James Vasek

IPC分类号： H01L21/027 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/336 ,  H01L29/78 ,  H01L21/31

CPC分类号： H01L21/0273 ,  H01L21/0338 ,  H01L21/28123 ,  H01L21/32139 ,  H01L29/66477 ,  H01L29/78 ,  Y10S438/945 ,  Y10S438/947

摘要： A semiconductor device is made by patterning a conductive layer for forming gates of transistors. The process for forming the gates has a step of patterning photoresist that overlies the conductive layer. The patterned photoresist is trimmed so that its width is reduced. Fluorine, preferably F2, is applied to the trimmed photoresist to increase its hardness and its selectivity to the conductive layer. Using the trimmed and fluorinated photoresist as a mask, the conductive layer is etched to form conductive features useful as gates. Transistors are formed in which the conductive pillars are gates. Other halogens, especially chlorine, may be substituted for the fluorine.

摘要翻译： 通过图案化用于形成晶体管的栅极的导电层来制造半导体器件。 用于形成栅极的工艺具有将导电层覆盖的光刻胶图形化的步骤。 修整图案化的光致抗蚀剂，使其宽度减小。 氟，优选F 2 N被施加到修剪的光致抗蚀剂以增加其硬度和对导电层的选择性。 使用修剪和氟化光致抗蚀剂作为掩模，蚀刻导电层以形成用作栅极的导电特征。 形成导电柱是栅极的晶体管。 其他卤素，特别是氯可以代替氟。

公开(公告)号：US20070207404A1

公开(公告)日：2007-09-06

申请号：US11369513

申请日：2006-03-06

申请人： Jinmiao Shen ,  Jonathan Cobb ,  William Darlington ,  Brian Fisher ,  Mark Hall ,  Vikas Sheth ,  Mehul Shroff ,  James Vasek

发明人： Jinmiao Shen ,  Jonathan Cobb ,  William Darlington ,  Brian Fisher ,  Mark Hall ,  Vikas Sheth ,  Mehul Shroff ,  James Vasek

IPC分类号： G03C1/00

CPC分类号： G03F7/168

摘要： A method for reducing line edge roughness (LER) in a layer of photoresist is provided. In accordance with the method, a layer of photoresist is applied to a substrate. The layer of photoresist is then patterned and annealed in an atmosphere comprising at least one gas selected from the group consisting of hydrogen, nitrogen and fluorine-containing materials. Preferably, the anneal is performed after patterning the photoresist, but either immediately after, or subsequent to, the trim.

摘要翻译： 提供了一种降低光致抗蚀剂层中的线边缘粗糙度（LER）的方法。 根据该方法，将一层光致抗蚀剂施加到基底上。 然后在包括选自氢，氮和含氟材料的至少一种气体的气氛中对光致抗蚀剂层进行构图和退火。 优选地，在图案化光致抗蚀剂之后进行退火，但是在修剪之后或之后。