摘要:
A process is provided for fabricating coated particles of a substantially uniform particle size. The process comprises coating small particles of well-defined crystalline phases with a polymerized gel. The process results in a ball-type sol-gel coating of the particles to provide particles which have a narrow size distribution. In many instances, crystalline particles of irregular shape have a substantially spherical shape upon coating with the sol-gel. In instances where the core is a high melting point material, such as an oxide, nitride, or carbide, the coat formulation can effect a low sintering temperature, which permits forming films of the particles at a much lower temperature than would otherwise be possible.
摘要:
The preparation of an amorphous gel of a hydrated oxide is coupled with the technique of controlled seeding to obtain monosize crystallized particles. Crystalline oxide particles, such as phosphors, are formed by a method comprising: (a) selecting an oxide system; (b) forming an amorphous phase of the oxide system; (c) controllably forming nuclei in the amorphous phase; and (d) converting the amorphous phase to the crystalline oxide particles by growth of the nuclei. The oxide particles have a substantially single size, with a narrow size distribution.
摘要:
A ceramic sensor (12) comprising a thin film (14) of Cu.sub.1=x Mn.sub.2-x O.sub.4-y is provided that quantitatively measures the partial pressure of CO gas in a flowing system (22). The sensor is specific to CO gas and is negligibly affected by the presence of the common automobile exhaust vapors NO, H.sub.2 O, and CH.sub.4, within the operational temperature range from about 250.degree. to 450.degree. C. The CO sensor of the invention has other applications, such as monitoring CO levels in laboratories, mines, and industrial smoke stacks, and may be used in environments up to about 700.degree. C.
摘要:
A high concentration of diatomic molecules is caged in a host crystal by a crystal growth process, in which all other internal degrees of freedom of the diatomic molecule, except the vibrational, are frozen. Such a system provides an efficient mid-infrared, solid-state laser that can be pumped by a laser diode. Other uses include magnetic (Faraday) rotators, electro-optic switches, and Q-switches. The crystal growth process employs Czochralski-type or Bridgman-type processes under high pressure to introduce the diatomic molecule into the host lattice at a temperature slightly above the melting point of the host crystal, followed by slow cooling.
摘要:
Post-growth gas-impregnation of an ionic crystal is provided to achieve a high level of caged neutral diatomic species or charged diatomic species, where all other internal degrees of freedom of the species, except the vibrational, are frozen. In the former case, the neutral diatomic species (molecules) enter interstitially, while in the latter case, the charged diatomic species (anions) substitute for anions on the crystal lattice. Such a system provides an efficient mid-infrared, solid-state laser that can be pumped by a laser diode. Other uses include magnetic (Faraday) rotators, electro-optic switches, and Q-switches. The impregnation process introduces the species into the host lattice at a temperature below the melting point of the host crystal, and preferably at a phase transition of the crystal, followed by slow cooling. A pressure greater than atmospheric pressure is used to introduce the tenant molecule interstitially, while a pressure of at least 1 atmosphere is used to introduce the dopant anion substitutionally.
摘要:
A novel, solid-state, low-temperature preparation of barium sulfate provides a higher purity material than that obtained by the conventional method of precipitation. The reaction involves heating a barium oxysalt in the presence of at least one sulfur-containing species for a period of time.
摘要:
This invention provides a method for the preparation of ultrapure active metal fluorides of increased purity from their metal oxides by reacting an active metal with a predetermined amount of HF(aq) to form a solid reaction product which is dried under controlled heating to form a hydrated fluoride. This hydrated active metal fluoride is then subjected to reactive atmosphere processing comprising hydrofluoric acid vapor in a CO.sub.2 reactive carrier gas and a selected halide compound in the gas phase for a predetermined period of time to further increase anion purity.
摘要:
The specification discloses new and improved processes for forming water-free metal or non-metal oxide materials, which may then be melted and formed into optical components in vitreous or crystal form, which are free of the hydrogen-impurity absorption in the near infrared wavelength range. In one process, a water-free oxide is prepared by reacting a chosen nonpolar compound containing the desired metal or non-metal with an aprotic oxygen-containing compound to form the oxide as a precipitate in a chosen aprotic nonaqueous liquid solvent which provides a water-free environment during the formation of the oxide, to prevent the inclusion of water and water-derived impurities in the oxide as formed. Then the oxide-containing precipitate is subjected to a reactive atmosphere process by exposing the powder to a chosen gas phase reactive atmosphere comprising atomic halogen at a predetermined elevated temperature for a predetermined period of time, to remove traces of water and water-derived impurities from the oxide.
摘要:
The specification discloses a process for forming a coherent, uniform oxide layer on the surface of a selected semiconductor material by heating a wafer of the selected semiconductor material at a predetermined elevated temperature in an atmosphere conducive to the formation of atomic oxygen for a period of time sufficient to enable the atomic oxygen to react with the surface atoms of the wafer and thus form the coherent, uniform oxide layer. The predetermined elevated temperature is sufficiently low to avoid adverse effects, such as dopant migration, on the wafer. In a preferred embodiment of the present invention, a coherent, uniform layer of silicon dioxide is formed on the surface of a silicon wafer by heating the wafer in a vapor mixture of iodine and water at a temperature of 750.degree. C. and one atmosphere of pressure.
摘要:
A fluoride glass is prepared by depositing a solid including a metal fluoride on a heated substrate, from a gaseous mixture of a nonmetallo-organic compound, carbon dioxide, and a source of carbonyl fluoride. The nonmetallo-organic compound contains the metallic cation of the metal fluoride bonded to an organic species through an electronegative element such as oxygen, but not directly to a carbon atom. The carbon dioxide, or optionally another species reactive with carbon to produce a gas, oxidizes solid carbon and other reduction products of the organic compound that could otherwise be present in the deposited metal fluoride to impair optical properties of the fluoride glass. The carbonyl fluoride, supplied by the gas itself or by reactants that produce the gas, reacts with the nonmetallo-organic compound without producing water, which would otherwise degrade the glass purity.