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    SnTiO3 material, method of preparation thereof, use thereof as ferroelectric material and device comprising a ferroelectric material
    2.
    发明授权
    SnTiO3 material, method of preparation thereof, use thereof as ferroelectric material and device comprising a ferroelectric material 有权

    公开(公告)号：US11787702B2

    公开(公告)日：2023-10-17

    申请号：US17052866

    申请日：2019-05-02

    申请人： MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V.

    发明人： Leo Peter Otto Diehl ,  Bettina Valeska Lotsch ,  Florian Pielnhofer

    IPC分类号： C01G23/00

    CPC分类号： C01G23/003 ,  C01P2002/34 ,  C01P2004/41 ,  C01P2006/42

    摘要： The present invention relates to a material of the formula SnTiO3 having a crystal structure comprised of layers, wherein the layers comprise Sn(II) ions, Ti(IV) ions and edge-sharing O6-octahedra, the edge-sharing O6-octahedra form a sub-layer, the Ti(IV) ions are located within ⅔ of the edge-sharing O6-octahedra, thus forming edge-sharing TiO6-octahedra, the edge-sharing TiO6-octahedra form a honeycomb structure within the sub-layer, the honeycomb structure comprising hexagons with Ti(IV)-vacancies within the hexagons, the Sn(II) ions are located above and below the Ti(IV)-vacancies with respect to the sub-layer, the Ti(IV) ions are optionally substituted with M, M is one or more elements selected from Group 4 and Group 14 elements, and the crystal structure satisfies at least one of the following features (i) and (ii): (i) the Sn(II) ions have a tetrahedral coordination sphere involving three O ions of the layer and the electron lone pair of the Sn(II) ions which is situated at an apical position relative to the three O ions of the layer, (ii) the layers are stacked so that each layer is translated relative to each adjacent layer by a stacking vector S1 or a stacking vector S2, the centers of adjacent hexagons form a parallelogram with a side having a length x and side having a length y, the stacking vector S1 is a combined translation along the side having the length x by ⅔ x and along the side having a lengthy by ⅓ y, the stacking vector S2 is a combined translation along the side having the length x by ⅓ x and along the side having a lengthy by ⅔ y, and the crystal structure comprises layers translated relative to adjacent layers by the stacking vector S1 and layers translated relative to adjacent layers by the stacking vector S2. The present invention is further directed to a material of the formula SnTiO3 having a tetragonal perovskite-type crystal structure, a method for the preparation of SnTiO3, a device comprising a ferroelectric material and a use of the material of the formula SnTiO3 in a ferroelectric element.