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公开(公告)号：US5246687A
公开(公告)日：1993-09-21
申请号：US11849
申请日：1993-01-29
IPC分类号： C01F11/46
CPC分类号： C01F11/462 , C01P2002/72 , C01P2002/88 , C01P2006/80
摘要： A novel, solid-state, low-temperature preparation of barium sulfate provides a higher purity material than that obtained by the conventional method of precipitation. The reaction involves heating a barium oxysalt in the presence of at least one sulfur-containing species for a period of time.
摘要翻译： 硫酸钡的新型固态低温制剂提供比通过常规沉淀方法获得的更高纯度的材料。 反应包括在至少一种含硫物质存在下加热钡氧化钾一段时间。
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公开(公告)号：US5371066A
公开(公告)日：1994-12-06
申请号：US895247
申请日：1992-06-05
CPC分类号： H01L39/2477 , C01B13/322 , C01G29/006 , C01G3/006 , C01P2006/40 , Y10S505/725 , Y10S505/742
摘要： A precursor material is superoxidized to a superconducting oxide material in an atmosphere containing a reactive component that reacts with and removes hydroxide ion (OH.sup.-), replacing it with peroxide ion (O.sup.-). Preferred reactive components include H.sub.2 O.sub.2, N.sub.2 O, and I.sub.2. The reactive component reacts with and removes hydroxide ion from the precursor material, to reach a higher oxidation state in the superconducting oxide material than possible by oxidation in molecular oxygen. The use of such a reactive component permits both faster oxidation of the precursor material at conventional temperatures and the use of lower temperatures to achieve oxidation.
摘要翻译： 在含有与氢氧根离子（OH-）反应并除去氢氧根离子（OH-））的反应性组分的气氛中，超导氧化物材料被超氧化。 优选的反应性组分包括H 2 O 2，N 2 O和I 2。 反应性组分与前体材料反应并除去氢氧根离子，在超导氧化物材料中比在分子氧中氧化可能达到更高的氧化态。 使用这种反应性组分允许在常规温度下快速氧化前体材料，并且使用较低温度来实现氧化。
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公开(公告)号：US5344816A
公开(公告)日：1994-09-06
申请号：US23749
申请日：1993-02-24
IPC分类号： C04B35/00 , C01G1/00 , C04B35/45 , C04B35/64 , C04B41/80 , C04B41/85 , H01L39/24 , C01F11/02 , C01G3/02
CPC分类号： H01L39/2464 , C04B35/45 , C04B35/64 , Y10S505/725 , Y10S505/742
摘要： High temperature superconducting oxide materials can be taken to a higher, but stable, state of oxidation by removing H-impurities, such as OH.sup.-, using I.sub.2 /O.sub.2 mixtures in a reactive atmosphere process. A higher T.sub.c and a narrower .DELTA.T-transition result.
摘要翻译： 通过在反应性气氛中使用I2 / O2混合物，可以通过除去H - 杂质（如OH-），将高温超导氧化物材料转化为较高但稳定的氧化态。 较高的Tc和较窄的DELTA T转换结果。
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公开(公告)号：US5252949A
公开(公告)日：1993-10-12
申请号：US751029
申请日：1991-08-28
CPC分类号： G01N27/12 , G01N33/004
摘要： A ceramic sensor (12) comprising a thin film (14) of Cu.sub.1=x Mn.sub.2-x O.sub.4-y is provided that quantitatively measures the partial pressure of CO gas in a flowing system (22). The sensor is specific to CO gas and is negligibly affected by the presence of the common automobile exhaust vapors NO, H.sub.2 O, and CH.sub.4, within the operational temperature range from about 250.degree. to 450.degree. C. The CO sensor of the invention has other applications, such as monitoring CO levels in laboratories, mines, and industrial smoke stacks, and may be used in environments up to about 700.degree. C.
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公开(公告)号：US4857293A
公开(公告)日：1989-08-15
申请号：US109360
申请日：1987-10-15
申请人： Ricardo C. Pastor , Luisa E. Gorre
发明人： Ricardo C. Pastor , Luisa E. Gorre
摘要： This invention provides a method for the preparation of ultrapure active metal fluorides of increased purity from their metal oxides by reacting an active metal with a predetermined amount of HF(aq) to form a solid reaction product which is dried under controlled heating to form a hydrated fluoride. This hydrated active metal fluoride is then subjected to reactive atmosphere processing comprising hydrofluoric acid vapor in a CO.sub.2 reactive carrier gas and a selected halide compound in the gas phase for a predetermined period of time to further increase anion purity.
摘要翻译： 本发明提供了一种通过使活性金属与预定量的HF（aq）反应以制备固体反应产物，通过使活性金属与预定量的HF（aq）反应制备从其金属氧化物提纯的超纯活性金属氟化物的方法，该固体反应产物在受控加热下干燥以形成水合 氟化物。 然后将这种水合的活性金属氟化物在气相中在CO 2反应性载气和选择的卤化物化合物中进行包含氢氟酸蒸气的反应性气氛处理预定的时间以进一步增加阴离子纯度。
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公开(公告)号：US4465656A
公开(公告)日：1984-08-14
申请号：US481592
申请日：1982-04-04
CPC分类号： C03C1/00 , C01F17/0068
摘要： The specification discloses new and improved processes for forming water-free metal or non-metal oxide materials, which may then be melted and formed into optical components in vitreous or crystal form, which are free of the hydrogen-impurity absorption in the near infrared wavelength range. In one process, a water-free oxide is prepared by reacting a chosen nonpolar compound containing the desired metal or non-metal with an aprotic oxygen-containing compound to form the oxide as a precipitate in a chosen aprotic nonaqueous liquid solvent which provides a water-free environment during the formation of the oxide, to prevent the inclusion of water and water-derived impurities in the oxide as formed. Then the oxide-containing precipitate is subjected to a reactive atmosphere process by exposing the powder to a chosen gas phase reactive atmosphere comprising atomic halogen at a predetermined elevated temperature for a predetermined period of time, to remove traces of water and water-derived impurities from the oxide.
摘要翻译： 该说明书公开了用于形成无水金属或非金属氧化物材料的新的和改进的方法，然后将其熔化并形成为玻璃体或晶体形式的光学部件，其在近红外波长中没有吸附氢杂质 范围。 在一个方法中，通过使选择的含有所需金属或非金属的非极性化合物与非质子含氧化合物反应来制备无水氧化物，以在选择的非质子非水性液体溶剂中形成沉淀物的氧化物，所述非质子非水性非水液体溶剂提供水 在氧化物形成过程中的无环境，以防止在形成的氧化物中包含水和水源杂质。 然后通过在预定的高温下将粉末暴露于包含原子卤素的所选择的气相反应性气氛预定的时间内，将含氧化物的沉淀物进行反应性气氛处理，从而将痕量的水和水衍生的杂质从 氧化物。
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7.发明授权Process for low-temperature surface layer oxidation of a semiconductor substrate 失效半导体衬底的低温表面层氧化的方法
公开(公告)号：US4267205A
公开(公告)日：1981-05-12
申请号：US66606
申请日：1979-08-15
IPC分类号： C23C8/14 , H01L21/316 , B05D5/12
CPC分类号： H01L21/02238 , C23C8/14 , H01L21/02255 , H01L21/31662
摘要： The specification discloses a process for forming a coherent, uniform oxide layer on the surface of a selected semiconductor material by heating a wafer of the selected semiconductor material at a predetermined elevated temperature in an atmosphere conducive to the formation of atomic oxygen for a period of time sufficient to enable the atomic oxygen to react with the surface atoms of the wafer and thus form the coherent, uniform oxide layer. The predetermined elevated temperature is sufficiently low to avoid adverse effects, such as dopant migration, on the wafer. In a preferred embodiment of the present invention, a coherent, uniform layer of silicon dioxide is formed on the surface of a silicon wafer by heating the wafer in a vapor mixture of iodine and water at a temperature of 750.degree. C. and one atmosphere of pressure.
摘要翻译： 本说明书公开了一种用于在选定的半导体材料的表面上形成相干，均匀的氧化物层的方法，该方法是在预定的升高的温度下，在有助于形成原子氧的气氛中加热所选半导体材料的晶片一段时间 足以使原子氧与晶片的表面原子反应，从而形成相干均匀的氧化物层。 预定的升高的温度足够低以避免在晶片上的不利影响，例如掺杂剂迁移。 在本发明的优选实施例中，通过在750℃的温度下将碘和水的蒸气混合物中的晶片加热，在硅晶片的表面上形成相干均匀的二氧化硅层， 压力。
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公开(公告)号：US5146468A
公开(公告)日：1992-09-08
申请号：US627796
申请日：1990-12-14
申请人： Hiroshi Kimura , Ricardo C. Pastor
发明人： Hiroshi Kimura , Ricardo C. Pastor
摘要： A high concentration of diatomic molecules is caged in a host crystal by a crystal growth process, in which all other internal degrees of freedom of the diatomic molecule, except the vibrational, are frozen. Such a system provides an efficient mid-infrared, solid-state laser that can be pumped by a laser diode. Other uses include magnetic (Faraday) rotators, electro-optic switches, and Q-switches. The crystal growth process employs Czochralski-type or Bridgman-type processes under high pressure to introduce the diatomic molecule into the host lattice at a temperature slightly above the melting point of the host crystal, followed by slow cooling.
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公开(公告)号：US5069701A
公开(公告)日：1991-12-03
申请号：US488374
申请日：1990-02-23
申请人： Ricardo C. Pastor , Luisa E. Gorre
发明人： Ricardo C. Pastor , Luisa E. Gorre
IPC分类号： C03C17/02
摘要： A fluoride glass is prepared by depositing a solid including a metal fluoride on a heated substrate, from a gaseous mixture of a nonmetallo-organic compound, carbon dioxide, and a source of carbonyl fluoride. The nonmetallo-organic compound contains the metallic cation of the metal fluoride bonded to an organic species through an electronegative element such as oxygen, but not directly to a carbon atom. The carbon dioxide, or optionally another species reactive with carbon to produce a gas, oxidizes solid carbon and other reduction products of the organic compound that could otherwise be present in the deposited metal fluoride to impair optical properties of the fluoride glass. The carbonyl fluoride, supplied by the gas itself or by reactants that produce the gas, reacts with the nonmetallo-organic compound without producing water, which would otherwise degrade the glass purity.
摘要翻译： 通过从非金属有机化合物，二氧化碳和碳酰氟源的气体混合物中沉积包含金属氟化物的固体在加热的基底上制备氟化物玻璃。 非金属有机化合物含有通过电负性元素如氧而键合到有机物质的金属氟化物的金属阳离子，但不直接与碳原子结合。 二氧化碳或任选的另一种与碳反应以产生气体的物质氧化有机化合物的固体碳和其它还原产物，否则可能存在于沉积的金属氟化物中以损害氟化物玻璃的光学性质。 由气体本身或由产生气体的反应物提供的碳酰氟与非金属有机化合物反应而不产生水，否则会降低玻璃的纯度。
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公开(公告)号：US4784716A
公开(公告)日：1988-11-15
申请号：US795572
申请日：1985-11-06
申请人： Stephen C. Rand , Ricardo C. Pastor
发明人： Stephen C. Rand , Ricardo C. Pastor
CPC分类号： G02F1/383 , C30B29/22 , C30B33/00 , G02B6/02 , Y10S117/918 , Y10S359/90
摘要： A process of fabricating a hybrid single crystal fiber having nonlinear optical properties such as frequency doubling. Said process includes applying a force to a fiber core resting upon a bulk nonlinear crystal such as LiIO.sub.3 in a saturated solution of LiIO.sub.3 in water. After the core is embedded a sufficient distance into the crystal the force is removed.
摘要翻译： 制造具有非线性光学特性如混频的混合单晶光纤的工艺。 所述方法包括在LiIO3在水中的饱和溶液中的纤维核上施加力，所述纤维芯位于诸如LiIO 3之类的体非线性晶体上。 在芯体嵌入足够的距离进入晶体之后，力被去除。
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