公开(公告)号：US20140001462A1

公开(公告)日：2014-01-02

申请号：US13536641

申请日：2012-06-28

申请人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Tian Xiao ,  Juergen Musolf

发明人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Tian Xiao ,  Juergen Musolf

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L21/467 ,  H01L21/4763 ,  H01L23/535 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78696

摘要： A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.

摘要翻译： 一种制造稳定的高迁移率金属氧化物薄膜晶体管的方法包括以下步骤：提供衬底，将栅极定位在衬底上，以及在栅极上沉积栅极电介质层，并且将衬底部分未被栅极覆盖。 包括金属氧化物半导体膜和金属氧化物钝化膜的多层膜活性层沉积在栅极电介质上，钝化膜位于与半导体膜的重叠关系中。 蚀刻停止层位于钝化膜的表面上并限定有源层中的沟道区。 在蚀刻停止层的相对侧上的多个膜有源层的一部分被修改以形成欧姆接触，并且金属源极/漏极触点位于多个膜有源层的修改部分上。

公开(公告)号：US10109647B2

公开(公告)日：2018-10-23

申请号：US15173481

申请日：2016-06-03

申请人： Gang Yu ,  Chan-Long Shieh ,  Juergen Musolf ,  Fatt Foong ,  Tian Xiao

发明人： Gang Yu ,  Chan-Long Shieh ,  Juergen Musolf ,  Fatt Foong ,  Tian Xiao

IPC分类号： H01L29/10 ,  H01L27/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

摘要： A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.

公开(公告)号：US20170069662A1

公开(公告)日：2017-03-09

申请号：US15173481

申请日：2016-06-03

申请人： Gang Yu ,  Chan-Long Shieh ,  Juergen Musolf ,  Fatt Foong ,  Tian Xiao

发明人： Gang Yu ,  Chan-Long Shieh ,  Juergen Musolf ,  Fatt Foong ,  Tian Xiao

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L27/1203 ,  H01L21/02565 ,  H01L21/02664 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.

摘要翻译： 一种制造高迁移率半导体金属氧化物薄膜晶体管的方法，包括以下步骤：沉积半导体金属氧化物材料层，在MO材料层上沉积蚀刻停止材料的覆盖层，以及图案化源/漏层 包括将源极/漏极金属层蚀刻成定位成限定半导体金属氧化物层中的沟道区域的源极/漏极端子的蚀刻停止材料的覆盖层上的金属。 蚀刻停止材料至少在源极/漏极端子之下在垂直于覆盖层的平面的方向上导电，以在源极/漏极端子和半导体金属氧化物材料层之间提供电接触。 蚀刻停止材料也是化学稳固的，以在蚀刻工艺期间保护半导体金属氧化物沟道材料层。

公开(公告)号：US09379247B2

公开(公告)日：2016-06-28

申请号：US13536641

申请日：2012-06-28

申请人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Tian Xiao ,  Juergen Musolf

发明人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Tian Xiao ,  Juergen Musolf

IPC分类号： H01L29/10 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/467 ,  H01L21/4763 ,  H01L23/535 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78696

摘要： A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.

摘要翻译： 一种制造稳定的高迁移率金属氧化物薄膜晶体管的方法包括以下步骤：提供衬底，将栅极定位在衬底上，以及在栅极上沉积栅极电介质层，并且将衬底部分未被栅极覆盖。 包括金属氧化物半导体膜和金属氧化物钝化膜的多层膜活性层沉积在栅极电介质上，钝化膜位于与半导体膜的重叠关系中。 蚀刻停止层位于钝化膜的表面上并限定有源层中的沟道区。 在蚀刻停止层的相对侧上的多个膜有源层的一部分被修改以形成欧姆接触，并且金属源极/漏极触点位于多个膜有源层的修改部分上。

公开(公告)号：US20150303311A1

公开(公告)日：2015-10-22

申请号：US14753460

申请日：2015-06-29

申请人： Gang Yu ,  Chan-Long Shieh ,  Juergen Musolf ,  Fatt Foong ,  Tian Xiao

发明人： Gang Yu ,  Chan-Long Shieh ,  Juergen Musolf ,  Fatt Foong ,  Tian Xiao

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L23/29 ,  H01L29/423 ,  H01L29/66 ,  H01L23/31

CPC分类号： H01L29/7869 ,  H01L21/02266 ,  H01L21/02269 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02282 ,  H01L21/02565 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/42356 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin film circuit includes a thin film transistor with a metal oxide semiconductor channel having a conduction band minimum (CBM) with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band minimum (CBM) with a second energy level. The second energy level being lower than, equal to, or no more than 0.5 eV above the first energy level. The circuit is used for an electronic device including any one of an AMLCD, AMOLED, AMLED, AMEPD.

摘要翻译： 薄膜电路包括具有具有第一能级的导带最小（CBM）的金属氧化物半导体沟道的薄膜晶体管。 晶体管还包括覆盖金属氧化物半导体沟道的至少一部分的钝化材料层。 钝化材料具有具有第二能级的导带最小值（CBM）。 第二能量水平低于等于或不超过第一能级的0.5eV。 该电路用于包括AMLCD，AMOLED，AMLED，AMEPD中的任何一种的电子设备。

公开(公告)号：US20160293769A1

公开(公告)日：2016-10-06

申请号：US15186628

申请日：2016-06-20

申请人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Tian Xiao ,  Juergen Musolf

发明人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Tian Xiao ,  Juergen Musolf

IPC分类号： H01L29/786 ,  H01L23/535 ,  H01L21/467 ,  H01L29/66 ,  H01L21/4763 ,  H01L29/417 ,  H01L29/06

CPC分类号： H01L29/7869 ,  H01L21/467 ,  H01L21/4763 ,  H01L23/535 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78696

摘要： A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.

摘要翻译： 一种制造稳定的高迁移率金属氧化物薄膜晶体管的方法包括以下步骤：提供衬底，将栅极定位在衬底上，以及在栅极上沉积栅极电介质层，并且将衬底部分未被栅极覆盖。 包括金属氧化物半导体膜和金属氧化物钝化膜的多层膜活性层沉积在栅极电介质上，钝化膜位于与半导体膜的重叠关系中。 蚀刻停止层位于钝化膜的表面上并限定有源层中的沟道区。 在蚀刻停止层的相对侧上的多个膜有源层的一部分被修改以形成欧姆接触，并且金属源极/漏极触点位于多个膜有源层的修改部分上。

公开(公告)号：US09362413B2

公开(公告)日：2016-06-07

申请号：US14081130

申请日：2013-11-15

申请人： Gang Yu ,  Chan-Long Shieh ,  Juergen Musolf ,  Fatt Foong ,  Tian Xiao

发明人： Gang Yu ,  Chan-Long Shieh ,  Juergen Musolf ,  Fatt Foong ,  Tian Xiao

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L27/1203 ,  H01L21/02565 ,  H01L21/02664 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.

摘要翻译： 一种制造高迁移率半导体金属氧化物薄膜晶体管的方法，包括以下步骤：沉积半导体金属氧化物材料层，在MO材料层上沉积蚀刻停止材料的覆盖层，以及图案化源/漏层 包括将源极/漏极金属层蚀刻成定位成限定半导体金属氧化物层中的沟道区域的源极/漏极端子的蚀刻停止材料的覆盖层上的金属。 蚀刻停止材料至少在源极/漏极端子之下在垂直于覆盖层的平面的方向上导电，以在源极/漏极端子和半导体金属氧化物材料层之间提供电接触。 蚀刻停止材料也是化学稳固的，以在蚀刻工艺期间保护半导体金属氧化物沟道材料层。

公开(公告)号：US09773918B2

公开(公告)日：2017-09-26

申请号：US14753460

申请日：2015-06-29

申请人： Gang Yu ,  Chan-Long Shieh ,  Juergen Musolf ,  Fatt Foong ,  Tian Xiao

发明人： Gang Yu ,  Chan-Long Shieh ,  Juergen Musolf ,  Fatt Foong ,  Tian Xiao

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L23/31 ,  H01L23/29 ,  H01L29/66 ,  H01L29/423

CPC分类号： H01L29/7869 ,  H01L21/02266 ,  H01L21/02269 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02282 ,  H01L21/02565 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/42356 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin film circuit includes a thin film transistor with a metal oxide semiconductor channel having a conduction band minimum (CBM) with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band minimum (CBM) with a second energy level. The second energy level being lower than, equal to, or no more than 0.5 eV above the first energy level. The circuit is used for an electronic device including any one of an AMLCD, AMOLED, AMLED, AMEPD.

公开(公告)号：US20150137113A1

公开(公告)日：2015-05-21

申请号：US14081130

申请日：2013-11-15

申请人： Gang Yu ,  Chan-Long Shieh ,  Juergen Musolf ,  Fatt Foong ,  Tian Xiao

发明人： Gang Yu ,  Chan-Long Shieh ,  Juergen Musolf ,  Fatt Foong ,  Tian Xiao

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L27/1203 ,  H01L21/02565 ,  H01L21/02664 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.

摘要翻译： 一种制造高迁移率半导体金属氧化物薄膜晶体管的方法，包括以下步骤：沉积半导体金属氧化物材料层，在MO材料层上沉积蚀刻停止材料的覆盖层，以及图案化源/漏层 包括将源极/漏极金属层蚀刻成定位成限定半导体金属氧化物层中的沟道区域的源极/漏极端子的蚀刻停止材料的覆盖层上的金属。 蚀刻停止材料至少在源极/漏极端子之下在垂直于覆盖层的平面的方向上导电，以在源极/漏极端子和半导体金属氧化物材料层之间提供电接触。 蚀刻停止材料也是化学稳固的，以在蚀刻工艺期间保护半导体金属氧化物沟道材料层。

公开(公告)号：US09356156B2

公开(公告)日：2016-05-31

申请号：US13902514

申请日：2013-05-24

申请人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Juergen Musolf

发明人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Juergen Musolf

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC分类号： H01L29/66969 ,  H01L21/02063 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76895 ,  H01L27/1225 ,  H01L29/247 ,  H01L29/42384 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2021/775

摘要： A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and in situ. The layer of amorphous metal oxide has a mobility above 40 cm2/Vs and a carrier concentration in a range of approximately 1018 cm−3 to approximately 5×1019 cm−3. Source/drain contacts are positioned on the protective layer and in electrical contact therewith.

摘要翻译： 制造稳定的高迁移率无定形MOTFT的方法包括提供其上形成有栅极的基板和位于栅极上方的栅介质层的步骤。 通过溅射将载流子传输结构沉积在栅极介电层上。 载流子传输结构包括邻近栅极电介质的非晶高迁移率金属氧化物层，以及沉积在无氧和原位沉积的无定形高迁移率金属氧化物层上的相对惰性的材料保护层。 非晶金属氧化物层的迁移率高于40cm 2 / Vs，载流子浓度在约1018cm-3至约5×1019cm-3的范围内。 源极/漏极触点位于保护层上并与之电接触。