公开(公告)号：US07672696B2

公开(公告)日：2010-03-02

申请号：US12470188

申请日：2009-05-21

Applicant: Chang-Jae Lee ,  Ki-Seon Ryu ,  Beum-Joon Kim

Inventor： Chang-Jae Lee ,  Ki-Seon Ryu ,  Beum-Joon Kim

IPC: H04B1/16 ,  H04W4/00 ,  H04M1/00 ,  H04B1/38 ,  G08C17/00

CPC classification number: H04W52/0235 ,  Y02D70/00

Abstract: A method of performing a ranging process between a base station and a mobile station in sleep mode in a wireless access system, wherein the base station provides the mobile station with an initial notification of a periodic ranging time that occurs during a sleep time interval and during which the mobile station is to perform the ranging process, the initial notification included in a first message, the first message indicating whether the mobile station should terminate sleep mode to receive downlink data, and wherein the base station provides the mobile station with subsequent notifications of periodic ranging times that occur during the sleep time interval, the subsequent notifications indicated in a second message, the second message transmitted to the mobile station as part of the ranging process such that the mobile station performs a plurality of ranging processes within the sleep time interval.

Abstract translation: 一种在无线接入系统中以休眠模式在基站与移动站之间执行测距过程的方法，其中所述基站向所述移动站提供在睡眠时间间隔期间和在休眠期间期间发生的周期性测距时间的初始通知 移动台要执行测距处理的初始通知包括在第一消息中，第一消息指示移动台是否应当终止睡眠模式以接收下行链路数据，并且其中基站向移动台提供随后的通知 在休眠时间间隔期间发生的周期性测距时间，在第二消息中指示的后续通知，将第二消息作为测距过程的一部分发送到移动台，使得移动站在睡眠时间间隔内执行多个测距过程 。

公开(公告)号：US20070133451A1

公开(公告)日：2007-06-14

申请号：US11674991

申请日：2007-02-14

Applicant: Chang-Jae Lee ,  Ki-Seon Ryu ,  Beum-Joon Kim

Inventor： Chang-Jae Lee ,  Ki-Seon Ryu ,  Beum-Joon Kim

IPC: H04B7/185

CPC classification number: H04W52/0235 ,  Y02D70/00

Abstract: A method of performing a ranging process between a base station and a mobile station in sleep mode in a wireless access system, wherein the base station provides the mobile station with an initial notification of a periodic ranging time that occurs during a sleep time interval and during which the mobile station is to perform the ranging process, the initial notification included in a first message, the first message indicating whether the mobile station should terminate sleep mode to receive downlink data, and wherein the base station provides the mobile station with subsequent notifications of periodic ranging times that occur during the sleep time interval, the subsequent notifications indicated in a second message, the second message transmitted to the mobile station as part of the ranging process such that the mobile station performs a plurality of ranging processes within the sleep time interval.

Abstract translation: 一种在无线接入系统中以休眠模式在基站与移动站之间执行测距过程的方法，其中所述基站向所述移动站提供在睡眠时间间隔期间和在休眠期间期间发生的周期性测距时间的初始通知 移动台要执行测距处理的初始通知包括在第一消息中，第一消息指示移动台是否应当终止睡眠模式以接收下行链路数据，并且其中基站向移动台提供随后的通知 在休眠时间间隔期间发生的周期性测距时间，在第二消息中指示的后续通知，将第二消息作为测距过程的一部分发送到移动台，使得移动站在睡眠时间间隔内执行多个测距过程 。

公开(公告)号：US06344391B1

公开(公告)日：2002-02-05

申请号：US09660337

申请日：2000-09-12

Applicant: Chang-Jae Lee ,  Nae-Hak Park

Inventor： Chang-Jae Lee ,  Nae-Hak Park

IPC: H01L218242

CPC classification number: H01L27/10852 ,  H01L27/10811 ,  H01L27/10888

Abstract: A semiconductor device includes a semiconductor substrate having an active area including first and second impurity regions of a transistor, a gate formed over the active area of the semiconductor substrate and isolated from the semiconductor substrate, a first insulating interlayer formed on the semiconductor substrate and having first and second contact holes exposing the first and the second impurity regions, respectively, a capacitor having a storage electrode and a plate electrode, the storage electrode being connected electrically to the first impurity region through the first contact hole, a bit line contact pad connected electrically to the second impurity region through the second contact hole, a second insulating interlayer formed on the plate electrode and having a third contact hole exposing the bit line contact pad, and a bit line formed on the second insulating interlayer and in contact with the bit line contact pad through the third contact hole.

Abstract translation: 半导体器件包括半导体衬底，其具有包括晶体管的第一和第二杂质区的有源区，形成在半导体衬底的有源区上且与半导体衬底隔离的栅极;形成在半导体衬底上的第一绝缘层， 分别暴露第一和第二杂质区的第一和第二接触孔，具有存储电极和平板电极的电容器，所述存储电极通过所述第一接触孔电连接到所述第一杂质区，位线接触焊盘连接 通过第二接触孔电连接到第二杂质区，形成在平板电极上并具有暴露位线接触焊盘的第三接触孔的第二绝缘中间层和形成在第二绝缘中间层上并与位接触的位线 线接触垫通过第三接触孔。

公开(公告)号：US06174774B1

公开(公告)日：2001-01-16

申请号：US09026690

申请日：1998-02-20

Applicant: Chang-Jae Lee

Inventor： Chang-Jae Lee

IPC: H01L21336

CPC classification number: H01L27/10894 ,  H01L21/823425 ,  H01L21/823443 ,  H01L27/10873 ,  H01L27/10888

Abstract: A method of fabricating a semiconductor device having a memory device region and a logic device region on a substrate includes the steps of forming first and second gate lines on the substrate at the memory device region and the logic device region, respectively, forming a sidewall insulating layer on both sides of each of the first and second gate lines, forming a plurality of impurity regions in the substrate, forming a silicon nitride layer on the memory device including the first gate lines, forming a silicide layer on the second gate line and impurity regions at the logic device region, and forming an oxide layer on an exposed surface excluding portions over each one of the impurity regions at the memory region and the logic device region, respectively.

Abstract translation: 制造具有衬底上的存储器件区域和逻辑器件区域的半导体器件的方法包括以下步骤：在存储器件区域和逻辑器件区域上分别在衬底上形成第一和第二栅极线，形成侧壁绝缘 在所述第一和第二栅极线中的每一个的两侧上形成层，在所述衬底中形成多个杂质区，在包括所述第一栅极线的存储器件上形成氮化硅层，在所述第二栅极线上形成硅化物层和杂质 区域，并且在暴露表面上分别在存储区域和逻辑器件区域上的每个杂质区域上除去部分之外的氧化物层。

公开(公告)号：US06171930B2

公开(公告)日：2001-01-09

申请号：US09233463

申请日：1999-01-20

Applicant: Chang-Jae Lee ,  Jae-Il Ju

Inventor： Chang-Jae Lee ,  Jae-Il Ju

IPC: H01L2176

CPC classification number: H01L21/3081 ,  H01L21/76264 ,  H01L21/76281 ,  H01L21/76283

Abstract: The present invention relates to a device isolation structure and a device solation method in a semiconductor power IC. The device isolation structure according to the present invention includes: a semiconductor substrate including a high voltage region and a low voltage region; a trench overlapping the high voltage device region of the semiconductor substrate and an interfacing region formed between the high voltage device region and the low voltage device region; a fourth insulating film, a fifth insulating film, and a conductive film sequentially layered in the trench; a first insulating film pattern formed on the semiconductor substrate including the trench; and field insulating films respectively formed on the trench and on a portion of an upper surface of the semiconductor substrate which is exposed out of the first insulating film pattern. The present invention has several advantages concerning manufacturing costs and reliability, some of which being achieved by forming a thermal oxide film in an empty space of the conductive film by which oxygen is permeated thereinto and thus restraining breakdown from being generated between high voltage devices at a high voltage.

Abstract translation: 本发明涉及半导体功率IC中的器件隔离结构和器件固定方法。 根据本发明的器件隔离结构包括：包括高电压区域和低电压区域的半导体衬底; 与半导体衬底的高压器件区域重叠的沟槽和形成在高电压器件区域和低电压器件区域之间的界面区域; 第四绝缘膜，第五绝缘膜和顺序层叠在沟槽中的导电膜; 形成在包括沟槽的半导体衬底上的第一绝缘膜图案; 以及分别形成在所述沟槽上和所述半导体衬底的从所述第一绝缘膜图案露出的所述上表面的一部分上的场绝缘膜。 本发明具有制造成本和可靠性方面的几个优点，其中一些优点是通过在导电膜的空的空间中形成热氧化膜来实现的，氧空气通过氧化膜渗入其中，从而抑制在高压装置之间产生的击穿 高压。

公开(公告)号：US5661067A

公开(公告)日：1997-08-26

申请号：US686767

申请日：1996-07-26

Applicant: Chang-Jae Lee ,  Jong Kwan Kim

Inventor： Chang-Jae Lee ,  Jong Kwan Kim

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/266 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L21/266 ,  H01L21/823892

Abstract: An improved twin well formation method for a semiconductor device capable of improving the latch-up characteristic in DRAM device which requires a high integration density and of improving a recess problem which occurs due to the capacitor, which includes the steps of a first step which forms an insulation film on a semiconductor substrate having a first region and a second region; a second step which forms a first temporary film on an insulation film of the first region; a third step which forms a first side wall spacer at the first temporary side wall; a fourth step which implants a first conductive ion to a substrate of a second region; a fifth step which forms a second temporary film on a substrate of the second region; a sixth step which removes the first temporary film; a seventh step which implants a second conductive ion to a substrate of the first region; and an eighth step which anneals and removes the second temporary film and the first insulation spacer.

Abstract translation: 一种用于半导体器件的改进的双阱形成方法，其能够改善需要高集成度的DRAM器件的闩锁特性并改善由于电容器而发生的凹陷问题，其包括形成第一步骤的步骤 在具有第一区域和第二区域的半导体衬底上的绝缘膜; 第二步骤，在所述第一区域的绝缘膜上形成第一临时膜; 第三步骤，在第一临时侧壁处形成第一侧壁间隔物; 将第一导电离子注入第二区域的衬底的第四步骤; 在第二区域的基板上形成第二临时膜的第五步骤; 第六步骤，去除第一临时胶片; 第七步骤，将第二导电离子注入到第一区域的衬底; 以及第八步骤，其使所述第二临时膜和所述第一绝缘间隔件退火并除去。

公开(公告)号：US08989746B2

公开(公告)日：2015-03-24

申请号：US11847918

申请日：2007-08-30

Applicant: Chang-Jae Lee ,  Beom-Joon Kim ,  Ki-Seon Ryu ,  Yong-Ho Kim ,  Yong-Won Kwak

Inventor： Chang-Jae Lee ,  Beom-Joon Kim ,  Ki-Seon Ryu ,  Yong-Ho Kim ,  Yong-Won Kwak

IPC: H04W36/12

CPC classification number: H04W36/12

Abstract: A method of associating a mobile station to a base station in a wireless communication system comprises transmitting to a serving base station a scanning request message comprising an association indicator. The method also comprises receiving from the serving base station a scanning response message comprising a rendezvous time associated with a neighboring base station for initiating ranging with the neighboring base station, wherein the serving base station communicates an association notification to the neighboring base station, the association notification comprising the rendezvous time. The method also comprises associating with the neighboring base station by transmitting a ranging request after passing of the rendezvous time determined from a transmission time of the scanning response message from the neighboring base station, wherein the rendezvous time is associated with a time the neighboring base station is expected to provide a non-contention based ranging opportunity for the mobile station.

Abstract translation: 一种在无线通信系统中将移动台与基站相关联的方法包括向服务基站发送包括关联指示符的扫描请求消息。 该方法还包括从服务基站接收包括与相邻基站相关联的会合时间的扫描响应消息，用于发起与相邻基站的测距，其中服务基站向相邻基站传送关联通知，该关联 通知包括会合时间。 该方法还包括通过在从相邻基站的扫描响应消息的传输时间确定的会合时间之后发送测距请求来与相邻基站相关联，其中会合时间与相邻基站的时间相关联 预计将为移动台提供非竞争的测距机会。

公开(公告)号：US08514757B2

公开(公告)日：2013-08-20

申请号：US12470250

申请日：2009-05-21

Applicant: Chang-Jae Lee ,  Ki-Seon Ryu ,  Beum-Joon Kim

Inventor： Chang-Jae Lee ,  Ki-Seon Ryu ,  Beum-Joon Kim

IPC: G08C17/00 ,  H04W72/00

CPC classification number: H04W52/0235 ,  Y02D70/00

Abstract: A method of performing a ranging process between a base station and a mobile station in sleep mode in a wireless access system, wherein the base station provides the mobile station with an initial notification of a periodic ranging time that occurs during a sleep time interval and during which the mobile station is to perform the ranging process, the initial notification included in a first message, the first message indicating whether the mobile station should terminate sleep mode to receive downlink data, and wherein the base station provides the mobile station with subsequent notifications of periodic ranging times that occur during the sleep time interval, the subsequent notifications indicated in a second message, the second message transmitted to the mobile station as part of the ranging process such that the mobile station performs a plurality of ranging processes within the sleep time interval.

Abstract translation: 一种在无线接入系统中以休眠模式在基站与移动站之间执行测距过程的方法，其中所述基站向所述移动站提供在睡眠时间间隔期间和在休眠期间期间发生的周期性测距时间的初始通知 移动台要执行测距处理的初始通知包括在第一消息中，第一消息指示移动台是否应当终止睡眠模式以接收下行链路数据，并且其中基站向移动台提供随后的通知 在休眠时间间隔期间发生的周期性测距时间，在第二消息中指示的后续通知，将第二消息作为测距过程的一部分发送到移动台，使得移动站在睡眠时间间隔内执行多个测距过程 。

公开(公告)号：US08351945B2

公开(公告)日：2013-01-08

申请号：US11194721

申请日：2005-08-01

Applicant: Chang-Jae Lee ,  Beom-Joon Kim ,  Ki-Seon Ryu ,  Yong-Ho Kim ,  Yong-Won Kwak

Inventor： Chang-Jae Lee ,  Beom-Joon Kim ,  Ki-Seon Ryu ,  Yong-Ho Kim ,  Yong-Won Kwak

IPC: H04W36/00

CPC classification number: H04W36/12

Abstract: A method of associating a mobile station to a base station in a wireless communication system comprises transmitting to a serving base station a scanning request message comprising an association indicator. The method also comprises receiving from the serving base station a scanning response message comprising a rendezvous time associated with a neighboring base station for initiating ranging with the neighboring base station, wherein the serving base station communicates an association notification to the neighboring base station, the association notification comprising the rendezvous time. The method also comprises associating with the neighboring base neighboring base station by transmitting a ranging request after passing of the rendezvous time determined from a transmission time of the scanning response message from the neighboring base station, wherein the rendezvous time is associated with a time the neighboring base station is expected to provide a non-contention based ranging opportunity for the mobile station.

Abstract translation: 一种在无线通信系统中将移动台与基站相关联的方法包括向服务基站发送包括关联指示符的扫描请求消息。 该方法还包括从服务基站接收包括与相邻基站相关联的会合时间的扫描响应消息，用于发起与相邻基站的测距，其中服务基站向相邻基站传送关联通知，该关联 通知包括会合时间。 该方法还包括通过在从相邻基站的扫描响应消息的发送时间确定的会合时间之后发送测距请求来与相邻基站相邻基站相关联，其中会合时间与相邻的基站周围的时间相关联 基站预计将为移动台提供一种非竞争的测距机会。

公开(公告)号：US06593631B2

公开(公告)日：2003-07-15

申请号：US09850004

申请日：2001-05-08

Applicant: Chang-Jae Lee ,  Jong-Kwan Kim

Inventor： Chang-Jae Lee ,  Jong-Kwan Kim

IPC: H01L2976

CPC classification number: H01L23/535 ,  H01L21/823842 ,  H01L21/823871 ,  H01L29/4933 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of fabricating a semiconductor device includes the steps of: forming a well of first conductivity type and well of second conductivity type in a substrate; forming a field oxide layer and gate oxide layer on the substrate; forming first and second polysilicon layers on the field oxide layer and gate oxide layer, the first polysilicon layer being doped with impurities of second conductivity type, the second polysilicon layer being doped with impurities of first conductivity, the first and second polysilicon layers coming into contact with each other; patterning the first and second polysilicon layers to be isolated from each other, to thereby forming first and second gates; and forming a conductive layer between the first and second gates. Accordingly, isolation of N-type and P-type polysilicon layers from each other, and patterning of them for the purpose of forming a gate are carried out using one mask, effectively simplifying the etching process during a gate patterning process. Also, by providing a conductive layer between the first and second gates, which electrically connects those gates, mutual diffusion of the impurities doping the polysilicon layers is prevented.

Abstract translation: 制造半导体器件的方法包括以下步骤：在衬底中形成第一导电类型和第二导电类型的阱; 在衬底上形成场氧化物层和栅极氧化物层; 在所述场氧化物层和栅极氧化物层上形成第一和第二多晶硅层，所述第一多晶硅层掺杂有第二导电类型的杂质，所述第二多晶硅层掺杂有第一导电性的杂质，所述第一和第二多晶硅层接触 彼此; 将第一和第二多晶硅层图形化以彼此隔离，从而形成第一和第二栅极; 以及在所述第一和第二栅极之间形成导电层。 因此，为了形成栅极的目的，使用一个掩模来进行N型和P型多晶硅层的隔离以及它们的图案化，有效地简化了栅极图案化工艺期间的蚀刻工艺。 此外，通过在第一和第二栅极之间提供导电层，其电连接这些栅极，防止掺杂多晶硅层的杂质的相互扩散。