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公开(公告)号：US08278818B2
公开(公告)日：2012-10-02
申请号：US11143952
申请日：2005-06-03
申请人： Chang-Yong Jeong , Tae-Wook Kang , Chang-Soo Kim , Yu-Sung Cho
发明人： Chang-Yong Jeong , Tae-Wook Kang , Chang-Soo Kim , Yu-Sung Cho
IPC分类号： H05B33/00
CPC分类号： H01L27/3246 , H01L27/3283 , H01L51/5256
摘要： An electroluminescent (EL) display device and a method of fabricating the same are provided. The device includes a substrate; a plurality of pixel electrodes disposed on the substrate; a pixel defining layer disposed on the pixel electrodes and having an opening part exposing a predetermined part of each of the pixel electrodes; and at least one barrier layer comprised in and/or on the pixel defining layer. In this device, the pixel defining layer includes at least one barrier layer in order to reduce the amount of outgas from the pixel defining layer and prevent degradation of an emission portion due to the outgas. Also, the pixel defining layer is formed to a sufficiently small thickness to facilitate a subsequent process using a laser induced thermal imaging (LITI) process.
摘要翻译： 提供一种电致发光（EL）显示装置及其制造方法。 该装置包括基板; 设置在所述基板上的多个像素电极; 设置在所述像素电极上并具有使每个所述像素电极的预定部分露出的开口部的像素限定层; 以及包含在像素限定层中和/或上的至少一个势垒层。 在该装置中，像素限定层包括至少一个阻挡层，以便减少来自像素限定层的排气量，并防止由于排出气体引起的排放部分的劣化。 此外，像素限定层形成为足够小的厚度以便于使用激光诱导热成像（LITI）工艺的后续处理。
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公开(公告)号：US20060022587A1
公开(公告)日：2006-02-02
申请号：US11143952
申请日：2005-06-03
申请人： Chang-Yong Jeong , Tae-Wook Kang , Chang-Soo Kim , Yu-Sung Cho
发明人： Chang-Yong Jeong , Tae-Wook Kang , Chang-Soo Kim , Yu-Sung Cho
IPC分类号： H05B33/00
CPC分类号： H01L27/3246 , H01L27/3283 , H01L51/5256
摘要： An electroluminescent (EL) display device and a method of fabricating the same are provided. The device includes a substrate; a plurality of pixel electrodes disposed on the substrate; a pixel defining layer disposed on the pixel electrodes and having an opening part exposing a predetermined part of each of the pixel electrodes; and at least one barrier layer comprised in and/or on the pixel defining layer. In this device, the pixel defining layer includes at least one barrier layer in order to reduce the amount of outgas from the pixel defining layer and prevent degradation of an emission portion due to the outgas. Also, the pixel defining layer is formed to a sufficiently small thickness to facilitate a subsequent process using a laser induced thermal imaging (LITI) process.
摘要翻译： 提供一种电致发光（EL）显示装置及其制造方法。 该装置包括基板; 设置在所述基板上的多个像素电极; 设置在所述像素电极上并具有使每个所述像素电极的预定部分露出的开口部的像素限定层; 以及包含在像素限定层中和/或上的至少一个势垒层。 在该装置中，像素限定层包括至少一个阻挡层，以便减少来自像素限定层的排气量，并防止由于排出气体引起的排放部分的劣化。 此外，像素限定层形成为足够小的厚度以便于使用激光诱导热成像（LITI）工艺的后续处理。
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公开(公告)号：US08168531B2
公开(公告)日：2012-05-01
申请号：US12434072
申请日：2009-05-01
申请人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L21/4763
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译： 一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。 所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔和暴露 半导体层的一部分。 接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。
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公开(公告)号：US20050285114A1
公开(公告)日：2005-12-29
申请号：US11145955
申请日：2005-06-07
申请人： Tae-Wook Kang , Chang-Soo Kim , Chang-Yong Jeong
发明人： Tae-Wook Kang , Chang-Soo Kim , Chang-Yong Jeong
CPC分类号： H01L51/5203 , H01L27/3244 , H01L51/5271
摘要： An electroluminescence display device including a thin film transistor layer formed on a substrate, at least one insulating layer, and a pixel layer that includes a first electrode layer, a second electrode layer, and an intermediate layer interposed between the first electrode layer and the second electrode layer and having at least an emitting layer. The pixel layer further includes a reflection layer that is disposed under the first electrode layer and that extends to a via hole formed in the insulating layer, and an auxiliary conductive layer is disposed under the reflection layer. The auxiliary conductive layer extends to the via hole, and the first electrode layer contacts at least a portion of the auxiliary conductive layer.
摘要翻译： 一种电致发光显示装置，其包括形成在基板上的薄膜晶体管层，至少一个绝缘层和像素层，所述像素层包括插入在所述第一电极层和所述第二电极层之间的第一电极层，第二电极层和中间层 电极层，并且具有至少一个发光层。 像素层还包括设置在第一电极层下方并延伸到形成在绝缘层中的通孔的反射层，并且辅助导电层设置在反射层下方。 辅助导电层延伸到通孔，并且第一电极层接触辅助导电层的至少一部分。
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公开(公告)号：US20120146143A1
公开(公告)日：2012-06-14
申请号：US13162836
申请日：2011-06-17
申请人： Tae-Wook KANG , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook KANG , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L29/786 , H01L23/522
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译： 一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。 所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔和暴露 半导体层的一部分。 接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。
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6.发明申请公开(公告)号：US20050263761A1
公开(公告)日：2005-12-01
申请号：US11124124
申请日：2005-05-09
申请人： Chang-Soo Kim , Tae-Wook Kang , Chang-Yong Jeong , Jae-Young Oh , Sang-Il Park , Seong-Moh Seo
发明人： Chang-Soo Kim , Tae-Wook Kang , Chang-Yong Jeong , Jae-Young Oh , Sang-Il Park , Seong-Moh Seo
IPC分类号： G02F1/1368 , G02F1/136 , G09F9/30 , H01L21/00 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/32 , H01L29/04 , H01L29/10 , H01L29/15 , H01L29/745 , H01L29/76 , H01L29/786 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L51/52
CPC分类号： H01L29/78603 , H01L27/12 , H01L27/1248 , H01L27/3262 , H01L51/5284
摘要： A TFT having a dual buffer structure, a method of fabricating the same, and a flat panel display having the TFT, and a method of fabricating the same are provided. The TFT includes a first buffer layer formed of an amorphous silicon layer on a substrate, a second buffer layer formed on the first buffer layer. The TFT also includes a semiconductor layer formed on the second buffer layer and a gate electrode formed on the semiconductor layer. The dual buffer structure provides better barrier to impurities diffusing from the substrate, and also acts as a black matrix to reduce unwanted reflections and is a source of hydrogen to passivate other layers.
摘要翻译： 提供具有双缓冲结构的TFT及其制造方法，以及具有该TFT的平板显示器及其制造方法。 TFT包括由衬底上的非晶硅层形成的第一缓冲层，形成在第一缓冲层上的第二缓冲层。 TFT还包括形成在第二缓冲层上的半导体层和形成在半导体层上的栅电极。 双缓冲结构为从衬底扩散的杂质提供更好的屏障，并且还用作黑色矩阵以减少不必要的反射，并且是氢源来钝化其它层。
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公开(公告)号：US07985992B2
公开(公告)日：2011-07-26
申请号：US12434048
申请日：2009-05-01
申请人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L29/76
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译： 一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。 所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔和暴露 半导体层的一部分。 接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。
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公开(公告)号：US20090275176A1
公开(公告)日：2009-11-05
申请号：US12434072
申请日：2009-05-01
申请人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L21/336 , H01L21/20 , H01L21/768
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译： 一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。 所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔以及暴露 半导体层的一部分。 接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。
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9.发明授权公开(公告)号：US07554118B2
公开(公告)日：2009-06-30
申请号：US11124124
申请日：2005-05-09
申请人： Chang-Soo Kim , Tae-Wook Kang , Chang-Yong Jeong , Jae-Young Oh , Sang-Il Park , Seong-Moh Seo
发明人： Chang-Soo Kim , Tae-Wook Kang , Chang-Yong Jeong , Jae-Young Oh , Sang-Il Park , Seong-Moh Seo
CPC分类号： H01L29/78603 , H01L27/12 , H01L27/1248 , H01L27/3262 , H01L51/5284
摘要： A TFT having a dual buffer structure, a method of fabricating the same, and a flat panel display having the TFT, and a method of fabricating the same are provided. The TFT includes a first buffer layer formed of an amorphous silicon layer on a substrate, a second buffer layer formed on the first buffer layer. The TFT also includes a semiconductor layer formed on the second buffer layer and a gate electrode formed on the semiconductor layer. The dual buffer structure provides better barrier to impurities diffusing from the substrate, and also acts as a black matrix to reduce unwanted reflections and is a source of hydrogen to passivate other layers.
摘要翻译： 提供具有双缓冲结构的TFT及其制造方法，以及具有该TFT的平板显示器及其制造方法。 TFT包括由衬底上的非晶硅层形成的第一缓冲层，形成在第一缓冲层上的第二缓冲层。 TFT还包括形成在第二缓冲层上的半导体层和形成在半导体层上的栅电极。 双缓冲结构为从衬底扩散的杂质提供更好的屏障，并且还用作黑色矩阵以减少不必要的反射，并且是氢源来钝化其它层。
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公开(公告)号：US07402944B2
公开(公告)日：2008-07-22
申请号：US11131963
申请日：2005-05-18
申请人： Chang-Yong Jeong , Tae-Wook Kang , Chang-Soo Kim
发明人： Chang-Yong Jeong , Tae-Wook Kang , Chang-Soo Kim
CPC分类号： H01L27/3258 , H01L27/3246 , H01L51/5209
摘要： An organic light emitting display device (OLED) and a method of fabricating the same, in which electric field influence between first and second electrodes is reduced in an edge region of a unit pixel. The OLED includes a substrate, and a thin film transistor (TFT) located on the substrate. A passivation layer is located on the TFT over substantially an entire surface of the substrate, and has a via hole for exposing source or drain electrode, and a groove. A first electrode on the passivation layer is in electrical contact with the exposed source or drain electrode through the via hole, and has an edge located in the groove. A pixel defining layer is located on the first electrode and has an opening for exposing a predetermined portion of the first electrode. An organic layer is in contact with the predetermined portion, and a second electrode is formed on the organic layer.
摘要翻译： 有机发光显示装置（OLED）及其制造方法，其中第一和第二电极之间的电场影响在单位像素的边缘区域中减小。 OLED包括基板和位于基板上的薄膜晶体管（TFT）。 钝化层位于基板的基本上整个表面上的TFT上，并且具有用于暴露源极或漏极以及沟槽的通孔。 钝化层上的第一电极通过通孔与暴露的源极或漏极电接触，并且具有位于沟槽中的边缘。 像素限定层位于第一电极上并且具有用于暴露第一电极的预定部分的开口。 有机层与预定部分接触，在有机层上形成第二电极。
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