摘要:
A dust-proof fabric is disclosed. The fabric comprises an inner knit fabric layer, an intermediate layer of a moisture absorbent polyurethane film and a high density woven polyester fabric outer layer. The outer layer contains a first set of spaced apart conductive yarns aligned with one another in the warp direction and a second set of spaced apart conductive yarns aligned in the weft direction.
摘要:
A dustproof fabric for use in manufacturing a smock to be worn in a clean room of a semiconductor fabrication facility includes an inner layer of a knitted fabric, an intermediate layer attached to the inner layer and formed of a non-micro porous polyurethane resin film possessing a high degree of moisture absorbency, and an outer layer attached to the intermediate layer and formed of a high density polyester woven fabric containing conductive yarn in the warp and weft.
摘要:
A method of cleaning a plasma generating area of a plasma applicator in situ is disclosed and comprises; supplying a by-product cleaning gas to the plasma generating area, and generating a plasma from the by-product cleaning gas in the plasma generating area.