公开(公告)号：US07393601B1

公开(公告)日：2008-07-01

申请号：US10911500

申请日：2004-08-05

申请人： Charles Changqing Chen ,  Shoutao Wang ,  Alan Huang

发明人： Charles Changqing Chen ,  Shoutao Wang ,  Alan Huang

IPC分类号： G11B5/66 ,  G11B5/70

CPC分类号： G11B5/7325 ,  G11B5/656 ,  G11B5/66

摘要： A magnetic recording medium having a substrate, underlayer, a low moment stabilizing layer, an antiferromagnetic coupling layer, a low magnetic layer having a magnetic saturation of equal to or less than 250 emu/cm2, and a high moment magnetic layer having a magnetic saturation of more than 250 emu/cm2, in this order, is disclosed. The magnetic recording medium has a weak coupling strength of Jex ≦0.05.

摘要翻译： 具有基板，底层，低力矩稳定层，反铁磁耦合层，磁饱和度等于或小于250emu / cm 2的低磁性层的磁记录介质，以及 公开了具有大于250emu / cm 2的磁饱和的高力矩磁性层。 磁记录介质具有弱的Jex <= 0.05的耦合强度。

公开(公告)号：US07504166B2

公开(公告)日：2009-03-17

申请号：US10856209

申请日：2004-05-27

申请人： Charles Changqing Chen ,  Thanh Thien Ha ,  Abebe Hailu ,  Taesun Ernest Kim ,  Mariana Rodica Munteanu ,  Steve Kuo-Hsing Hwang

发明人： Charles Changqing Chen ,  Thanh Thien Ha ,  Abebe Hailu ,  Taesun Ernest Kim ,  Mariana Rodica Munteanu ,  Steve Kuo-Hsing Hwang

IPC分类号： G11B5/66

CPC分类号： G11B5/7325 ,  G11B5/656 ,  G11B5/66 ,  G11B5/851

摘要： CoCrPtB is a conventional material used in some of the layers of a thin film magnetic media structure used for recording data in data storage devices such as hard drives. Typically the CoCrPtB layers used for magnetic media have high Cr and low B in bottom magnetic layers and low Cr and high B in top magnetic layers. In accordance with one embodiment of this invention and to improve media electrical performance, fifth elements, such as Ta, Nb and Hf, etc. were added to the CoCrPtB materials, resulting in CoCrPtB—X, to enhance the grain segregation. The five element CoCrPtB—X layers were deposited using a pulsed direct current sputter technique instead of conventional direct current sputtering techniques. The resulting magnetic media structure having CoCrPtB—X alloy layers exhibits an increase in coercivity Hc and improvement in recording performance.

摘要翻译： CoCrPtB是用于在诸如硬盘驱动器的数据存储设备中记录数据的薄膜磁性介质结构的一些层中的常规材料。 通常用于磁性介质的CoCrPtB层在底部磁性层中具有高Cr和低B，在顶部磁性层中具有低Cr和高B。 根据本发明的一个实施例，为了改善介质电性能，向CoCrPtB材料中添加了诸如Ta，Nb和Hf等第五元素，产生CoCrPtB-X，以增强晶粒分离。 使用脉冲直流溅射技术代替传统的直流溅射技术沉积五个元素CoCrPtB-X层。 所得到的具有CoCrPtB-X合金层的磁性介质结构表现出矫顽力Hc的提高和记录性能的提高。

公开(公告)号：US6150015A

公开(公告)日：2000-11-21

申请号：US984753

申请日：1997-12-04

申请人： Gerardo Bertero ,  Charles Changqing Chen ,  Tu Chen ,  Tsutomu Yamashita ,  Makoto Imakawa ,  Michinobu Suekane

发明人： Gerardo Bertero ,  Charles Changqing Chen ,  Tu Chen ,  Tsutomu Yamashita ,  Makoto Imakawa ,  Michinobu Suekane

IPC分类号： G11B5/66 ,  G11B5/64 ,  G11B5/65 ,  G11B5/73 ,  G11B5/738 ,  G11B5/84 ,  G11B5/85 ,  G11B5/851

CPC分类号： G11B5/7325 ,  G11B5/8404 ,  Y10S428/90 ,  Y10T428/12854 ,  Y10T428/26 ,  Y10T428/265

摘要： In this invention, an ultra thin layer of CoCr alloy nucleation layer is sputtered at an extremely low deposition rate above a predominantly (200) oriented Cr film followed by a CoCrPt based alloy sputtered film at higher rates and moderate temperatures. This structure creates a media which has very high Hc, and excellent PW50, low noise and excellent low TNLD values. By using this technique, the CoCrPt magnetic film achieves excellent in-plane crystallographic orientation, and high Hc is achieved with minimal amount of Pt addition to the magnetic film. The method allows very fine grain structure of cobalt to be formed which contributes to good signal to noise ratio. A fine grain structure combined with chromium segregation between the grains improve the signal to noise ratio even more. A high degree of in-plane c-axis orientation is achieved in the cobalt layer which provides very high hysteresis loop squareness which helps to improve the OW and TNLD. The perfection of the grains is very high so that high anisotropy is obtained in the magnetic layer, resulting in high Hc without the necessity of addition of high level of Pt. The high degree of crystalline perfection also contributes to low TNLD.

公开(公告)号：US20090211898A1

公开(公告)日：2009-08-27

申请号：US12391938

申请日：2009-02-24

申请人： Charles Changqing Chen ,  Thanh Thien Ha ,  Abebe Hailu ,  Taesun Ernest Kim ,  Mariana Rodica Munteanu ,  Steve Kuo-Hsing Hwang

发明人： Charles Changqing Chen ,  Thanh Thien Ha ,  Abebe Hailu ,  Taesun Ernest Kim ,  Mariana Rodica Munteanu ,  Steve Kuo-Hsing Hwang

IPC分类号： C23C14/34

CPC分类号： G11B5/7325 ,  G11B5/656 ,  G11B5/66 ,  G11B5/851

摘要： CoCrPtB is a conventional material used in some of the layers of a thin film magnetic media structure used for recording data in data storage devices such as hard drives. Typically the CoCrPtB layers used for magnetic media have high Cr and low B in bottom magnetic layers and low Cr and high B in top magnetic layers. In accordance with one embodiment of this invention and to improve media electrical performance, fifth elements, such as Ta, Nb and Hf, etc. were added to the CoCrPtB materials, resulting in CoCrPtB-X, to enhance the grain segregation. The five element CoCrPtB-X layers were deposited using a pulsed direct current sputter technique instead of conventional direct current sputtering techniques. The resulting magnetic media structure having CoCrPtB-X alloy layers exhibits an increase in coercivity Hc and improvement in recording performance.

摘要翻译： CoCrPtB是用于在诸如硬盘驱动器的数据存储设备中记录数据的薄膜磁性介质结构的一些层中的常规材料。 通常用于磁性介质的CoCrPtB层在底部磁性层中具有高Cr和低B，在顶部磁性层中具有低Cr和高B。 根据本发明的一个实施例，为了改善介质电性能，向CoCrPtB材料中添加了诸如Ta，Nb和Hf等第五元素，产生CoCrPtB-X，以增强晶粒分离。 使用脉冲直流溅射技术代替传统的直流溅射技术沉积五个元素CoCrPtB-X层。 所得到的具有CoCrPtB-X合金层的磁性介质结构表现出矫顽力Hc的提高和记录性能的提高。

公开(公告)号：US06878460B1

公开(公告)日：2005-04-12

申请号：US10396365

申请日：2003-03-26

申请人： Abebe Hailu ,  Charles Changqing Chen ,  Taesun Ernest Kim

发明人： Abebe Hailu ,  Charles Changqing Chen ,  Taesun Ernest Kim

IPC分类号： G11B5/64 ,  G11B5/73

CPC分类号： G11B5/732 ,  G11B5/656 ,  G11B5/7325 ,  Y10T428/12986

摘要： A thin film magnetic according medium with enhanced coercivity is provided. The magnetic recording medium comprises a non-magnetic substrate having a surface and a layer stack atop the substrate surface. The layer stack comprises a magnetic recording layer and a dual intermediate layer structure below the magnetic recording layer comprising a base layer and a non-magnetic layer between the base layer and the magnetic recording layer. The non-magnetic layer has a thickness less than that necessary for RKKY coupling between the base layer and the magnetic recording layer, and provides the medium with increased coercivity.

摘要翻译： 提供了具有增强矫顽力的薄膜磁性介质。 磁记录介质包括在基板表面上方具有表面和层叠层的非磁性基板。 层叠体包括磁记录层和位于磁记录层下面的双层中间层结构，包括在基层和磁记录层之间的基层和非磁性层。 非磁性层的厚度小于基底层与磁记录层之间的RKKY耦合所必需的厚度，并为介质提供增加的矫顽力。

公开(公告)号：US06500567B1

公开(公告)日：2002-12-31

申请号：US09677644

申请日：2000-10-03

申请人： Gerardo Bertero ,  Charles Changqing Chen ,  Tu Chen ,  Tsutomu Yamashita ,  Makoto Imakawa ,  Michinobu Suekane

发明人： Gerardo Bertero ,  Charles Changqing Chen ,  Tu Chen ,  Tsutomu Yamashita ,  Makoto Imakawa ,  Michinobu Suekane

IPC分类号： G11B566

CPC分类号： G11B5/7325 ,  G11B5/8404 ,  Y10S428/90 ,  Y10T428/12854 ,  Y10T428/26 ,  Y10T428/265

摘要： In this invention, an ultra thin layer of CoCr alloy nucleation layer is sputtered at an extremely low deposition rate above a predominantly (200) oriented Cr film followed by a CoCrPt based alloy sputtered film at higher rates and moderate temperatures. This structure creates a media which has very high Hc, and excellent PW50, low noise and excellent low TNLD values. By using this technique, the CoCrPt magnetic film achieves excellent in-plane crystallographic orientation, and high Hc is achieved with minimal amount of Pt addition to the magnetic film. The method allows very fine grain structure of cobalt to be formed which contributes to good signal to noise ratio. A fine grain structure combined with chromium segregation between the grains improve the signal to noise ratio even more. A high degree of in-plane c-axis orientation is achieved in the cobalt layer which provides very high hysteresis loop squareness which helps to improve the OW and TNLD. The perfection of the grains is very high so that high anisotropy is obtained in the magnetic layer, resulting in high Hc without the necessity of addition of high level of Pt. The high degree of crystalline perfection also contributes to low TNLD.

摘要翻译： 在本发明中，CoCr合金成核层的超薄层以高于主要（200）取向的Cr膜的极低的沉积速率溅射，接着以较高的速率和中等温度的CoCrPt基合金溅射膜溅射。 该结构产生了具有非常高的Hc，优良的PW50，低噪音和优异的低TNLD值的介质。 通过使用该技术，CoCrPt磁性膜实现了优异的面内晶体取向，并且以最小量的Pt添加到磁性膜来实现高Hc。 该方法允许形成钴的非常细的晶粒结构，这有助于良好的信噪比。 晶粒结构与晶粒间的铬分离结合，提高了信噪比。 在钴层中实现高度的面内c轴取向，其提供非常高的磁滞回线矩形度，这有助于改善OW和TNLD。 晶粒的完整性非常高，从而在磁性层中获得高各向异性，导致高Hc，而不需要添加高水平的Pt。 高度的结晶完善也有助于TNLD的低下。