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公开(公告)号：US09390917B2
公开(公告)日：2016-07-12
申请号：US13401512
申请日：2012-02-21
IPC分类号： H01L21/00 , H01L21/02 , H01L31/0224 , H01L31/032
CPC分类号： H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02614 , H01L31/022425 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： In one embodiment, a method includes depositing a CZT(S, Se) precursor layer onto a substrate, introducing a source-material layer comprising Sn(S, Se) into proximity with the precursor layer, and annealing the precursor layer in proximity with the source-material layer in a constrained volume.
摘要翻译： 在一个实施例中，一种方法包括将CZT（S，Se）前体层沉积到衬底上，将包含Sn（S，Se）的源材料层引入到与前体层接近的位置， 源材料层在约束体积中。
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2.发明授权公开(公告)号：US08969719B2
公开(公告)日：2015-03-03
申请号：US12641893
申请日：2009-12-18
申请人： Mariana Rodica Munteanu , Erol Girt
发明人： Mariana Rodica Munteanu , Erol Girt
IPC分类号： H01L31/00 , H01L31/032 , C23C14/00 , C23C14/06 , C23C14/34 , H01L31/0749
CPC分类号： H01L31/18 , C23C14/0057 , C23C14/0623 , C23C14/3407 , C23C14/3485 , C23C14/3492 , H01L31/0322 , H01L31/0749 , H01L31/1864 , Y02E10/541
摘要： In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).
摘要翻译： 在一个示例性实施例中，一种方法包括在衬底上溅射一个或多个吸收层。 在特定实施例中，在溅射之前和在一个或多个吸收层中的每一个的溅射期间，将衬底预加热到至少约300摄氏度的衬底温度，并且将至少一个 吸收层在压力为至少0.5帕斯卡的溅射气氛中进行。 另外，在特定实施例中，至少一个吸收层的溅射包括溅射靶，该溅射靶包含硫族化物合金，其包含铜（Cu）和一种或多种硫（S），硒（Se）或 碲（Te）。
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公开(公告)号：US20130276888A1
公开(公告)日：2013-10-24
申请号：US13452603
申请日：2012-04-20
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/1892 , H01L31/0322 , H01L31/0326 , H01L31/03928 , H01L31/1864 , Y02E10/541 , Y02P70/521
摘要： In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.
摘要翻译： 在一个实施例中，一种方法包括将光敏层沉积到第一衬底上，将接触层沉积到光敏层上，将第二衬底附着到接触层上，以及从光敏层，接触层和第二衬底去除第一衬底 。
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4.发明授权Perpendicular media with Cr-doped Fe-alloy containing soft underlayer (SUL) 有权垂直介质与含Cr的Fe合金含有软底层（SUL）公开(公告)号：US08313848B2
公开(公告)日：2012-11-20
申请号：US13209967
申请日：2011-08-15
申请人： Raj Nagappan Thangaraj , Mariana Rodica Munteanu , Erol Girt , Michael J. Stirniman , Thomas Patrick Nolan
发明人： Raj Nagappan Thangaraj , Mariana Rodica Munteanu , Erol Girt , Michael J. Stirniman , Thomas Patrick Nolan
IPC分类号： G11B5/66
CPC分类号： G11B5/667
摘要： A perpendicular magnetic recording medium having a substrate, a Cr-doped Fe-alloy-containing underlayer containing about 8 to 18 at % Cr and a perpendicular recording magnetic layer, and a process for improving corrosion resistance of the recording medium and for manufacturing the recording medium are disclosed.
摘要翻译： 具有基板，含有约8-18％（原子）Cr的Cr掺杂的含Fe合金的底层和垂直记录磁性层的垂直磁记录介质以及用于提高记录介质的耐腐蚀性和制造记录的方法 介质。
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5.发明申请MAGNETIC RECORDING MEDIA HAVING FIVE ELEMENT ALLOY DEPOSITED USING PULSED DIRECT CURRENT SPUTTERING 审中-公开具有使用脉冲直接电流溅出的五个元件合金的磁记录介质公开(公告)号：US20090211898A1
公开(公告)日：2009-08-27
申请号：US12391938
申请日：2009-02-24
申请人： Charles Changqing Chen , Thanh Thien Ha , Abebe Hailu , Taesun Ernest Kim , Mariana Rodica Munteanu , Steve Kuo-Hsing Hwang
发明人： Charles Changqing Chen , Thanh Thien Ha , Abebe Hailu , Taesun Ernest Kim , Mariana Rodica Munteanu , Steve Kuo-Hsing Hwang
IPC分类号： C23C14/34
CPC分类号： G11B5/7325 , G11B5/656 , G11B5/66 , G11B5/851
摘要： CoCrPtB is a conventional material used in some of the layers of a thin film magnetic media structure used for recording data in data storage devices such as hard drives. Typically the CoCrPtB layers used for magnetic media have high Cr and low B in bottom magnetic layers and low Cr and high B in top magnetic layers. In accordance with one embodiment of this invention and to improve media electrical performance, fifth elements, such as Ta, Nb and Hf, etc. were added to the CoCrPtB materials, resulting in CoCrPtB-X, to enhance the grain segregation. The five element CoCrPtB-X layers were deposited using a pulsed direct current sputter technique instead of conventional direct current sputtering techniques. The resulting magnetic media structure having CoCrPtB-X alloy layers exhibits an increase in coercivity Hc and improvement in recording performance.
摘要翻译： CoCrPtB是用于在诸如硬盘驱动器的数据存储设备中记录数据的薄膜磁性介质结构的一些层中的常规材料。 通常用于磁性介质的CoCrPtB层在底部磁性层中具有高Cr和低B，在顶部磁性层中具有低Cr和高B。 根据本发明的一个实施例，为了改善介质电性能，向CoCrPtB材料中添加了诸如Ta，Nb和Hf等第五元素，产生CoCrPtB-X，以增强晶粒分离。 使用脉冲直流溅射技术代替传统的直流溅射技术沉积五个元素CoCrPtB-X层。 所得到的具有CoCrPtB-X合金层的磁性介质结构表现出矫顽力Hc的提高和记录性能的提高。
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公开(公告)号：US20130045396A1
公开(公告)日：2013-02-21
申请号：US13620019
申请日：2012-09-14
IPC分类号： G11B5/66
摘要： A ferromagnetically coupled magnetic recording medium having a first ferromagnetic layer, a second ferromagnetic layer, and a ferromagnetic coupling layer to ferromagnetically couple the first ferromagnetic layer to the second ferromagnetic layer is used as stable magnetic media with high MrT in high density recording hard drives. The first ferromagnetic layer is the stabilization layer and the second ferromagnetic layer is the main recording layer. The ferromagnetic coupling layer comprises a conductive material having a thickness which produces ferromagnetic coupling between said first ferromagnetic layer and said second ferromagnetic layer via the RKKY interaction.
摘要翻译： 在高密度记录硬盘驱动器中，使用具有第一铁磁层，第二铁磁层和铁磁耦合层的铁磁耦合磁记录介质以将第一铁磁层铁磁耦合到第二铁磁层作为具有高MrT的稳定磁介质。 第一铁磁层是稳定层，第二铁磁层是主记录层。 铁磁耦合层包括具有通过RKKY相互作用在所述第一铁磁层和所述第二铁磁层之间产生铁磁耦合的厚度的导电材料。
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7.发明授权Magnetic recording media having five element alloy deposited using pulsed direct current sputtering 有权使用脉冲直流溅射沉积五元素合金的磁记录介质公开(公告)号：US07504166B2
公开(公告)日：2009-03-17
申请号：US10856209
申请日：2004-05-27
申请人： Charles Changqing Chen , Thanh Thien Ha , Abebe Hailu , Taesun Ernest Kim , Mariana Rodica Munteanu , Steve Kuo-Hsing Hwang
发明人： Charles Changqing Chen , Thanh Thien Ha , Abebe Hailu , Taesun Ernest Kim , Mariana Rodica Munteanu , Steve Kuo-Hsing Hwang
IPC分类号： G11B5/66
CPC分类号： G11B5/7325 , G11B5/656 , G11B5/66 , G11B5/851
摘要： CoCrPtB is a conventional material used in some of the layers of a thin film magnetic media structure used for recording data in data storage devices such as hard drives. Typically the CoCrPtB layers used for magnetic media have high Cr and low B in bottom magnetic layers and low Cr and high B in top magnetic layers. In accordance with one embodiment of this invention and to improve media electrical performance, fifth elements, such as Ta, Nb and Hf, etc. were added to the CoCrPtB materials, resulting in CoCrPtB—X, to enhance the grain segregation. The five element CoCrPtB—X layers were deposited using a pulsed direct current sputter technique instead of conventional direct current sputtering techniques. The resulting magnetic media structure having CoCrPtB—X alloy layers exhibits an increase in coercivity Hc and improvement in recording performance.
摘要翻译： CoCrPtB是用于在诸如硬盘驱动器的数据存储设备中记录数据的薄膜磁性介质结构的一些层中的常规材料。 通常用于磁性介质的CoCrPtB层在底部磁性层中具有高Cr和低B，在顶部磁性层中具有低Cr和高B。 根据本发明的一个实施例，为了改善介质电性能，向CoCrPtB材料中添加了诸如Ta，Nb和Hf等第五元素，产生CoCrPtB-X，以增强晶粒分离。 使用脉冲直流溅射技术代替传统的直流溅射技术沉积五个元素CoCrPtB-X层。 所得到的具有CoCrPtB-X合金层的磁性介质结构表现出矫顽力Hc的提高和记录性能的提高。
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公开(公告)号：US06852426B1
公开(公告)日：2005-02-08
申请号：US10106072
申请日：2002-03-27
IPC分类号： G11B5/66
CPC分类号： G11B5/66 , G11B5/732 , G11B5/7325 , Y10T428/12465 , Y10T428/12646 , Y10T428/12854 , Y10T428/12861 , Y10T428/1291 , Y10T428/12931 , Y10T428/24967 , Y10T428/24975 , Y10T428/265
摘要： A high areal recording density longitudinal magnetic recording medium having improved thermal stability and signal-to-medium noise ratio (“SMNR”), comprises: (a) a non-magnetic substrate having at least one surface; and (b) a layer stack overlying the at least one surface, comprising a plurality of vertically spaced-apart ferromagnetic layers, each vertically adjacent pair of ferromagnetic layers being spaced-apart by a respective non-magnetic spacer layer, wherein: (i) at least one of the plurality of vertically adjacent, spaced-apart pairs of ferromagnetic layers forms an anti-ferromagnetically coupled media (“AFC”) component of the magnetic recording medium; and (ii) at least one of the plurality of vertically adjacent, spaced-apart pairs of ferromagnetic layers forms a laminated media (“LM”) component of the magnetic recording medium.
摘要翻译： 具有改善的热稳定性和信噪比（“SMNR”）的高面积记录密度纵向磁记录介质包括：（a）具有至少一个表面的非磁性基底; 每个垂直相邻的一对铁磁层由相应的非磁性间隔层间隔开，其中：（i）覆盖所述至少一个表面的层叠层， 多个垂直相邻的间隔开的铁磁层对中的至少一个形成磁记录介质的抗铁磁耦合介质（“AFC”）组件; 和（ii）多个垂直相邻的间隔开的铁磁层对中的至少一个形成磁记录介质的层压介质（“LM”）组件。
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公开(公告)号：US08981211B2
公开(公告)日：2015-03-17
申请号：US12405963
申请日：2009-03-17
申请人： Erol Girt , Mariana Rodica Munteanu
发明人： Erol Girt , Mariana Rodica Munteanu
IPC分类号： H01L31/00 , H01L21/02 , H01L31/0368 , H01L31/0392 , H01L31/068 , H01L31/18
CPC分类号： H01L21/02433 , H01L21/02422 , H01L21/02488 , H01L21/02491 , H01L21/02505 , H01L21/02513 , H01L21/02516 , H01L21/02521 , H01L29/045 , H01L31/0368 , H01L31/03682 , H01L31/0392 , H01L31/03923 , H01L31/03925 , H01L31/03926 , H01L31/03928 , H01L31/068 , H01L31/0682 , H01L31/1872 , Y02E10/541 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the fcc, hcp or bcc crystal structure is used to epitaxially orient a semiconductor layer on top of non-single-crystal substrates. In some implementations, this interlayer structure is used to establish epitaxial growth of multiple semiconductor layers, combinations of semiconductor and oxide layers, combinations of semiconductor and metal layers and combination of semiconductor, oxide and metal layers. This interlayer structure can also be used for epitaxial growth of p-type and n-type semiconductors in photovoltaic cells.
摘要翻译： 在一个实施方案中，使用沉积在种子层上的非晶或纳米晶种层和一个或多个金属层与fcc，hcp或bcc晶体结构的组合来使用层间结构来外延取向 在非单晶衬底上的半导体层。 在一些实施方案中，该层间结构用于建立多个半导体层的外延生长，半导体和氧化物层的组合，半导体和金属层的组合以及半导体，氧化物和金属层的组合。 该层间结构也可用于光伏电池中p型和n型半导体的外延生长。
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10.发明申请公开(公告)号：US20130217176A1
公开(公告)日：2013-08-22
申请号：US13467868
申请日：2012-05-09
CPC分类号： C23C16/56 , C23C14/0623 , C23C14/0629 , C23C14/5866 , C23C16/305 , C23C16/306 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing.
摘要翻译： 在一个实施方案中，一种方法包括将硫族化物前体层沉积到基底上，将盖引入靠近前体层，以及使覆盖层附近的前体层退火，其中退火在约束体积内进行，其中 覆盖层的存在减少了退火过程中挥发物质从前体层的分解。
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