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    Ultra-thin nucleation layer for magnetic thin film media and the method for manufacturing the same
    1.
    发明授权
    Ultra-thin nucleation layer for magnetic thin film media and the method for manufacturing the same 有权
    用于磁性薄膜介质的超薄成核层及其制造方法

    公开(公告)号：US06500567B1

    公开(公告)日：2002-12-31

    申请号：US09677644

    申请日：2000-10-03

    申请人： Gerardo Bertero ,  Charles Changqing Chen ,  Tu Chen ,  Tsutomu Yamashita ,  Makoto Imakawa ,  Michinobu Suekane

    发明人： Gerardo Bertero ,  Charles Changqing Chen ,  Tu Chen ,  Tsutomu Yamashita ,  Makoto Imakawa ,  Michinobu Suekane

    IPC分类号： G11B566

    CPC分类号： G11B5/7325 ,  G11B5/8404 ,  Y10S428/90 ,  Y10T428/12854 ,  Y10T428/26 ,  Y10T428/265

    摘要： In this invention, an ultra thin layer of CoCr alloy nucleation layer is sputtered at an extremely low deposition rate above a predominantly (200) oriented Cr film followed by a CoCrPt based alloy sputtered film at higher rates and moderate temperatures. This structure creates a media which has very high Hc, and excellent PW50, low noise and excellent low TNLD values. By using this technique, the CoCrPt magnetic film achieves excellent in-plane crystallographic orientation, and high Hc is achieved with minimal amount of Pt addition to the magnetic film. The method allows very fine grain structure of cobalt to be formed which contributes to good signal to noise ratio. A fine grain structure combined with chromium segregation between the grains improve the signal to noise ratio even more. A high degree of in-plane c-axis orientation is achieved in the cobalt layer which provides very high hysteresis loop squareness which helps to improve the OW and TNLD. The perfection of the grains is very high so that high anisotropy is obtained in the magnetic layer, resulting in high Hc without the necessity of addition of high level of Pt. The high degree of crystalline perfection also contributes to low TNLD.

    摘要翻译： 在本发明中，CoCr合金成核层的超薄层以高于主要（200）取向的Cr膜的极低的沉积速率溅射，接着以较高的速率和中等温度的CoCrPt基合金溅射膜溅射。 该结构产生了具有非常高的Hc，优良的PW50，低噪音和优异的低TNLD值的介质。 通过使用该技术，CoCrPt磁性膜实现了优异的面内晶体取向，并且以最小量的Pt添加到磁性膜来实现高Hc。 该方法允许形成钴的非常细的晶粒结构，这有助于良好的信噪比。 晶粒结构与晶粒间的铬分离结合，提高了信噪比。 在钴层中实现高度的面内c轴取向，其提供非常高的磁滞回线矩形度，这有助于改善OW和TNLD。 晶粒的完整性非常高，从而在磁性层中获得高各向异性，导致高Hc，而不需要添加高水平的Pt。 高度的结晶完善也有助于TNLD的低下。

    Multi-layer texture layer
    4.
    发明授权
    Multi-layer texture layer 失效
    多层纹理层

    公开(公告)号：US06482505B1

    公开(公告)日：2002-11-19

    申请号：US09569345

    申请日：2000-05-11

    申请人： Gerardo Bertero ,  Javier Wong ,  Tu Chen

    发明人： Gerardo Bertero ,  Javier Wong ,  Tu Chen

    IPC分类号： G11B582

    CPC分类号： G11B5/66 ,  Y10T428/12472 ,  Y10T428/12854 ,  Y10T428/12944 ,  Y10T428/24942

    摘要： A method for improving corrosion resistance while maximizing magnetic performance of a magnetic disk employed in data storage applications. The invention includes providing a substrate and forming a first layer above the substrate, the first layer having a first degree of abrasion resistance. The invention includes forming a second layer such as a Ni-containing layer above the first layer, the Ni-containing layer having a second degree of abrasion resistance lower than the first degree of abrasion resistance. The invention further includes forming grooves in the Ni-containing layer.

    摘要翻译： 一种提高耐腐蚀性的方法，同时最大化数据存储应用中使用的磁盘的磁性能。 本发明包括提供衬底并在衬底上形成第一层，第一层具有第一耐磨性。 本发明包括在第一层上方形成诸如含Ni层的第二层，具有低于第一耐磨性的第二耐磨性的含Ni层。 本发明还包括在含Ni层中形成沟槽。

    Magnetic thin film recording media having extremely low noise and high thermal stability
    5.
    发明授权
    Magnetic thin film recording media having extremely low noise and high thermal stability 有权
    具有极低噪音和高热稳定性的磁性薄膜记录介质

    公开(公告)号：US06730420B1

    公开(公告)日：2004-05-04

    申请号：US09703607

    申请日：2000-10-31

    申请人： Gerardo Bertero ,  Tu Chen ,  Charles Chen ,  Wei Cao

    发明人： Gerardo Bertero ,  Tu Chen ,  Charles Chen ,  Wei Cao

    IPC分类号： G11B566

    CPC分类号： G11B5/7325 ,  G11B5/66 ,  Y10S428/90 ,  Y10T428/24975 ,  Y10T428/265

    摘要： A magnetic medium having at least two intermediate layers between an underlayer and a magnetic layer. The first intermediate layer is designed to provide a good lattice match to the underlayer, while the second intermediate layer is designed to provide a good lattice match to the magnetic layer. Typically, the underlayer has one structure, such as body centered cube, while the magnetic layer has a second structure such as hexagonal close pack. In preferred embodiments, the transition from the one structure to the other structure occurs in the intermediate layers. For example, the first intermediate layer may be a hexagonal close pack structure. Because of the mismatch between the underlayer and the first layer, there may be crystal defects in this first intermediate layer. However, any remaining stress and mismatch is absorbed through the second layer, so that the second layer presents a substantially defect-free surface on which the magnetic layer may grow. Because the second layer is closely matched to the magnetic layer, the magnetic layer continues to grow in a defect-free fashion. In other embodiments of the present invention, a spacer layer having a hexagonal close pack structure may be used between two or more portions of a magnetic layer.

    摘要翻译： 一种在底层和磁性层之间具有至少两个中间层的磁介质。 第一中间层被设计成为底层提供良好的晶格匹配，而第二中间层被设计成提供与磁性层良好的晶格匹配。 通常，底层具有一种结构，例如体心立方体，而磁性层具有第二结构，例如六边形封闭组件。 在优选实施例中，从一个结构到另一个结构的转变发生在中间层中。 例如，第一中间层可以是六边形紧密包装结构。 由于底层和第一层之间的不匹配，在该第一中间层中可能存在晶体缺陷。 然而，通过第二层吸收任何剩余的应力和失配，使得第二层呈现出基本上无缺陷的表面，磁性层可以在其上生长。 由于第二层与磁性层紧密匹配，所以磁性层以无缺陷的方式继续生长。 在本发明的其它实施例中，可以在磁性层的两个或更多个部分之间使用具有六边形封装结构的间隔层。

    Method of sputtering a carbon protective film on a magnetic disk with high sp.sup.3 content
    6.
    发明授权
    Method of sputtering a carbon protective film on a magnetic disk with high sp.sup.3 content 有权
    在具有高sp3含量的磁盘上溅射碳保护膜的方法

    公开(公告)号：US6086730A

    公开(公告)日：2000-07-11

    申请号：US298107

    申请日：1999-04-22

    申请人： Wen Hong Liu ,  Gang Peng ,  Tsutomu Yamashita ,  Tu Chen

    发明人： Wen Hong Liu ,  Gang Peng ,  Tsutomu Yamashita ,  Tu Chen

    IPC分类号： C23C14/06 ,  C23C14/34 ,  G11B5/84 ,  G11B5/851

    CPC分类号： G11B5/8408 ,  C23C14/0605 ,  C23C14/34 ,  G11B5/851

    摘要： Sputtering method for producing amorphous hydrogenated carbon thin films with high sp.sup.3 content. By sputtering the carbon with a pulsed DC power supply having high voltage peaks, a carbon film with remarkably high sp.sup.3 bonding fraction can be obtained. Previously, carbon films with a very high sp.sup.3 fraction film with content as high (e.g. as 80%) could only be produced by methods such as filtered cathodic arc deposition or chemical vapor deposition methods (CVD) such as plasma-enhanced chemical vapor deposition (PE-CVD) and ion-beam deposition operating at some narrowly defined range of deposition conditions. It is very advantageous to use sputtering to create a high sp.sup.3 content film, since sputtering is more manufacturable and has higher productivity compared to CVD or ion-beam deposition methods. The resultant carbon film has excellent durability and corrosion resistance capability down to very low thickness. Also compared to PE-CVD and ion-beam deposition, the new sputtering process produce much less particles and the process can be run on a manufacturing tool for much longer time, thereby increasing the productivity of the machine, and providing disks with higher quality.

    摘要翻译： 用于生产具有高sp3含量的无定形氢化碳薄膜的溅射方法。 通过用具有高电压峰值的脉冲直流电源溅射碳，可以获得具有非常高的sp 3键合分数的碳膜。 以前，具有高含量（例如80％）的非常高的sp 3级分的膜的碳膜只能通过诸如过滤阴极电弧沉积或化学气相沉积法（CVD）的方法来产生，例如等离子体增强化学气相沉积（ PE-CVD）和离子束沉积操作在一些狭窄的沉积条件范围内。 使用溅射以产生高的sp3含量膜是非常有利的，因为与CVD或离子束沉积方法相比，溅射更可制造并且具有更高的生产率。 所得的碳膜具有优异的耐久性和耐腐蚀性能，从而达到非常低的厚度。 与PE-CVD和离子束沉积相比，新的溅射工艺产生的颗粒少得多，该工艺可以在制造工具上运行更长时间，从而提高机器的生产率，并提供更高质量的磁盘。

    Magnetic alloy for improved corrosion resistance and magnetic performance
    8.
    发明授权
    Magnetic alloy for improved corrosion resistance and magnetic performance 失效
    磁性合金，提高耐腐蚀性和磁性能

    公开(公告)号：US5908514A

    公开(公告)日：1999-06-01

    申请号：US740211

    申请日：1996-10-24

    申请人： Rajiv Yadav Ranjan ,  Tu Chen ,  Tsutomu Tom Yamashita ,  John Ko-Jen Chen

    发明人： Rajiv Yadav Ranjan ,  Tu Chen ,  Tsutomu Tom Yamashita ,  John Ko-Jen Chen

    IPC分类号： C22C19/07 ,  G11B5/64 ,  G11B5/66 ,  H01F10/16 ,  H01F1/04

    CPC分类号： G11B5/656 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12861 ,  Y10T428/31678

    摘要： A new magnetic alloy exhibits high Hc and Ms while exhibiting excellent corrosion resistance, thereby providing ideal physical properties for high density recording applications. Other parameters of the media, such as SNR, PW50, and S are at least maintained, if not also improved. The alloy contains cobalt and up to 10 at. % Ni, up to 20 at. % Pt, up to 10 at. % Ta, up to 10 at. % Ti, and optionally up to 6 at. % B. The ratio of the tantalum to titanium in the alloy is between 3:1 and 1:3. The alloy is deposited by vacuum deposition (typically sputtering) on a similarly deposited non-magnetic alloy under layer. Nitrogen and/or oxygen may be introduced into the alloy during deposition to improve SNR. Other corrosion-resistant thin film alloys may also be obtained by the inclusion of Ta and Ti.

    摘要翻译： 新的磁性合金表现出高Hc和Ms，同时具有优异的耐腐蚀性，从而为高密度记录应用提供了理想的物理性能。 至少保持介质的其他参数，如SNR，PW50和S，如果不能改善。 该合金含有钴，最多可达10英寸。 ％Ni，最多20盎司。 ％Pt，最多10个。 ％Ta，高达10 at。 ％Ti，任选至多6at。 ％B。合金中钽与钛的比例为3：1至1：3。 该合金通过真空沉积（通常是溅射）沉积在类似地沉积的非磁性合金层下。 可以在沉积期间将氮和/或氧引入合金以提高SNR。 也可以通过包含Ta和Ti来获得其它耐腐蚀的薄膜合金。

    Method for manufacturing a thin film magnetic recording medium
    9.
    发明授权
    Method for manufacturing a thin film magnetic recording medium 失效
    薄膜磁记录介质的制造方法

    公开(公告)号：US4749459A

    公开(公告)日：1988-06-07

    申请号：US838220

    申请日：1986-03-10

    申请人： Tsutomu T. Yamashita ,  Ching-Cheng Shir ,  Tu Chen

    发明人： Tsutomu T. Yamashita ,  Ching-Cheng Shir ,  Tu Chen

    IPC分类号： C23C14/00 ,  G11B5/851 ,  C23C14/34

    CPC分类号： C23C14/0036 ,  G11B5/851

    摘要： A film of magnetic recording media is formed by sputtering an alloy of cobalt and platinum onto a substrate. The sputtering takes place in a chamber containing argon and nitrogen. The magnetic coercivity of the resulting film is controlled by varying the concentration of nitrogen in the sputtering chamber. By using this technique, the film coercivity is controlled without varying other important parameters such as the saturation magnetization.

    摘要翻译： 通过将钴和铂的合金溅射到基底上来形成磁记录介质的膜。 溅射在含有氩气和氮气的室中进行。 通过改变溅射室中的氮浓度来控制所得膜的磁矫顽力。 通过使用该技术，可以控制膜矫顽力而不改变其它重要参数，例如饱和磁化强度。

    Magneto-optic storage media
    10.
    发明授权
    Magneto-optic storage media 失效
    磁光存储介质

    公开(公告)号：US4556291A

    公开(公告)日：1985-12-03

    申请号：US520922

    申请日：1983-08-08

    申请人： Tu Chen

    发明人： Tu Chen

    IPC分类号： G11B11/105 ,  H01F10/12 ,  H01F10/14 ,  H01F10/32 ,  G02F1/09 ,  G11C13/06

    CPC分类号： B82Y25/00 ,  G11B11/10586 ,  H01F10/12 ,  H01F10/14 ,  H01F10/32

    摘要： A magneto-optic storage media which utilizes two layers or films of magnetic material, with the magneto-optic hysteresis loop of one of the films being of a sense opposite to the sense of the magneto-optic hysteresis loop of the other film. The media permits the Farraday effect polarization rotations produced by one of the magnetic films to be in phase with Kerr effect polarization rotations produced by the other of the magnetic films, such that additive mode conversion is provided from different portions of the media whereby the detected signal has an increased signal-to-noise ratio.

    摘要翻译： 磁光存储介质利用两层或磁性材料薄膜，其中一层的磁光磁滞回线与其他薄膜的磁光磁滞回线的感觉相反。 介质允许由其中一个磁性膜产生的Farraday效应偏振旋转与由另一个磁性膜产生的克尔效应偏振旋转同相，使得从介质的不同部分提供加法模式转换，由此检测信号 具有增加的信噪比。