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    Temperature and pressure control methods to fill features with programmable resistance and switching devices
    3.
    发明授权
    Temperature and pressure control methods to fill features with programmable resistance and switching devices 有权
    温度和压力控制方法来填充具有可编程电阻和开关器件的特性

    公开(公告)号：US07994034B2

    公开(公告)日：2011-08-09

    申请号：US12075180

    申请日：2008-03-10

    申请人： Jeff Fournier ,  Wolodymyr Czubatyj ,  Tyler Lowrey

    发明人： Jeff Fournier ,  Wolodymyr Czubatyj ,  Tyler Lowrey

    IPC分类号： H01L21/20

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1641

    摘要： A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer, within the opening, and over selected portions of the bottom electrode, and a top electrode layer deposited over the active material layer. The device uses temperature and pressure control methods to increase surface mobility in an active material layer, thus providing complete coverage or fill of the openings in the insulative layer, selected exposed portions of the bottom electrode layer, and the insulative layer.

    摘要翻译： 可编程电阻，硫族化物，开关或相变材料器件包括具有多个堆叠层的衬底，其包括导电底电极层，其中形成有开口的绝缘层，沉积在绝缘层上的活性材料层， 开口和底部电极的选定部分，以及沉积在活性材料层上的顶部电极层。 该装置使用温度和压力控制方法来增加活性材料层中的表面迁移率，从而提供绝缘层中的开口，底部电极层的选定的暴露部分和绝缘层的完全覆盖或填充。

    Temperature and pressure control methods to fill features with programmable resistance and switching devices
    4.
    发明申请
    Temperature and pressure control methods to fill features with programmable resistance and switching devices 有权
    温度和压力控制方法来填充具有可编程电阻和开关器件的特性

    公开(公告)号：US20090227092A1

    公开(公告)日：2009-09-10

    申请号：US12075180

    申请日：2008-03-10

    申请人： Jeff Fournier ,  Wolodymyr Czubatyj ,  Tyler Lowrey

    发明人： Jeff Fournier ,  Wolodymyr Czubatyj ,  Tyler Lowrey

    IPC分类号： H01L47/00

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1641

    摘要： A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer, within the opening, and over selected portions of the bottom electrode, and a top electrode layer deposited over the active material layer. The device uses temperature and pressure control methods to increase surface mobility in an active material layer, thus providing complete coverage or fill of the openings in the insulative layer, selected exposed portions of the bottom electrode layer, and the insulative layer.

    摘要翻译： 可编程电阻，硫族化物，开关或相变材料器件包括具有多个堆叠层的衬底，其包括导电底电极层，其中形成有开口的绝缘层，沉积在绝缘层上的活性材料层， 开口和底部电极的选定部分，以及沉积在活性材料层上的顶部电极层。 该装置使用温度和压力控制方法来增加活性材料层中的表面迁移率，从而提供绝缘层中的开口，底部电极层的选定的暴露部分和绝缘层的完全覆盖或填充。