High gain amplifier with current limited positive feedback
    1.
    发明授权
    High gain amplifier with current limited positive feedback 有权
    具有电流限制正反馈的高增益放大器

    公开(公告)号:US06549070B1

    公开(公告)日:2003-04-15

    申请号:US09642964

    申请日:2000-08-21

    IPC分类号: H03F345

    摘要: A high gain amplifier includes an intermediate gain stage; an output gain stage driven by the intermediate gain stage; an input stage, for driving the intermediate gain stage, which is balanced between positive and negative feedback in normal operation; bias means for driving the input stage to maintain balance between positive and negative feedback in normal operation; and a resistance for limiting the output current of the intermediate stage in response to the input stage being overdriven into positive feedback.

    摘要翻译: 高增益放大器包括中间增益级; 由中间增益级驱动的输出增益级; 用于驱动中间增益级的输入级,其在正常操作中的正反馈之间平衡; 用于驱动输入级以在正常操作中保持正反馈之间的平衡的偏置装置; 并且响应于输入级被过驱动到正反馈的限制中间级的输出电流的电阻。

    Bandgap voltage regulator
    2.
    发明授权
    Bandgap voltage regulator 有权
    带隙电压调节器

    公开(公告)号:US07208930B1

    公开(公告)日:2007-04-24

    申请号:US11033058

    申请日:2005-01-10

    IPC分类号: G05F3/16

    CPC分类号: G05F3/30 Y10S323/907

    摘要: A bandgap voltage regulator is arranged such that, when a desired output voltage is present between its output and common terminals, current densities in a pair of bipolar transistors having unequal emitter areas are maintained in a fixed ratio. The difference in the transistors' base-emitter voltages is across a resistor, which thus conducts a PTAT current. The regulator also generates a CTAT current, and both the PTAT and CTAT currents are made to flow in another resistor, with the resulting voltages added by superposition. The regulator's resistors are sized such that Vout is an integral or fractional multiple of Vbg, where Vbg is the bandgap voltage for the fabrication process used to make the regulator's transistors, such that Vout is temperature invariant, to a first order. The resistors are preferably realized using unit resistors having a predetermined resistance, or series and/or parallel combinations of unit resistors.

    摘要翻译: 带隙电压调节器被布置成使得当在其输出端和公共端子之间存在期望的输出电压时,具有不同发射极面积的一对双极型晶体管中的电流密度保持固定的比例。 晶体管的基极 - 发射极电压的差异在一个电阻器上,因此传导PTAT电流。 调节器还产生CTAT电流,并且使PTAT和CTAT电流都流过另一个电阻器,并将所得到的电压叠加。 调节器的电阻器的尺寸使得V OUT2是V BAT的整数或分数倍,其中V Bg是用于制造的带隙电压 用于使调节器的晶体管的温度不变的方法达到第一级。 电阻器优选地使用具有预定电阻或单元电阻器的串联和/或并联组合的单元电阻器来实现。

    Temperature setpoint circuit with hysteresis
    3.
    发明授权
    Temperature setpoint circuit with hysteresis 有权
    带迟滞的温度设定电路

    公开(公告)号:US07495426B2

    公开(公告)日:2009-02-24

    申请号:US11370155

    申请日:2006-03-06

    IPC分类号: G05F3/16

    CPC分类号: G05D23/1904 Y10S323/907

    摘要: A temperature setpoint circuit comprises bipolar transistors Q1 and Q2 which receive currents I1 and I2 at their respective collectors and are operated at unequal current densities, with a resistance R1 connected between their bases such that the difference in their base-emitter voltages (ΔVbe) appears across R1. An additional PTAT current I3 is maintained in a constant ratio to I1 and I2 and provided to the collector of Q2 while Q2 is off, and is not provided while Q2 is on. The circuit is arranged such that Q2 is turned on and conducts a current equal to Ia when:ΔVbe=(kT/q)ln(NI1/Ia), where Ia=I2+I3, the temperature T at which ΔVbe=(kT/q)ln(NI1/Ia) being the circuit's setpoint temperature, such that the switching of current I3 provides hysteresis for the setpoint temperature which is approximately constant over temperature.

    摘要翻译: 温度设定点电路包括双极晶体管Q1和Q2,其双极晶体管Q1和Q2在其各自的集电极处接收电流I1和I2并以不相等的电流密度工作,电阻R1连接在它们的基极之间,使得其基极 - 发射极电压(DeltaVbe)的差异出现 跨越R1。 额定的PTAT电流I3以与I1和I2恒定的比例保持,并且在Q2关闭时提供给Q2的集电极,并且在Q2导通时不提供。 电路被布置为使得当ΔVbe=(kT / q)ln(NI1 / Ia)时,Q2导通并导通等于Ia的电流,其中Ia = I2 + I3,DeltaVbe =(kT / q)ln(NI1 / Ia)是电路的设定点温度,使得电流I3的切换为温度近似恒定的设定点温度提供滞后。

    Current compensation circuit for improved open-loop gain in an amplifier
    4.
    发明授权
    Current compensation circuit for improved open-loop gain in an amplifier 有权
    用于改善放大器开环增益的电流补偿电路

    公开(公告)号:US06483382B1

    公开(公告)日:2002-11-19

    申请号:US09663751

    申请日:2000-09-15

    IPC分类号: H03F345

    摘要: A current compensation circuit for an amplifier, for example an operational amplifier, having input and output stages coupled at a high-impedance node, compensates for any modulation of current occurring at the high-impedance node. Particularly, the compensation circuit of the present invention reduces the error current at the high-impedance node resulting from a mismatch in beta between PNP and NPN transistors in the output stage, and reduces any error current resulting from the Early voltage effects of transistors in the output stage. In this manner, the present invention serves to substantially isolate the amplifier input stage from the output load, and from any beta mismatch or Early voltage effects in the transistors of the output stage, resulting in greatly improved open-loop gain.

    摘要翻译: 用于放大器的电流补偿电路,例如具有在高阻抗节点处耦合的输入和输出级的运算放大器,补偿在高阻抗节点处发生的电流的任何调制。 特别地,本发明的补偿电路降低了在输出级中由PNP和NPN晶体管之间的β失配导致的高阻抗节点处的误差电流,并减少了由于晶体管的早期电压效应导致的任何误差电流 输出阶段。 以这种方式,本发明用于将放大器输入级与输出负载基本隔离,以及输出级的晶体管中的任何β失配或早期电压效应,从而大大提高了开环增益。

    Multiple differential amplifier system and method for transconductance mismatch compensation
    6.
    发明授权
    Multiple differential amplifier system and method for transconductance mismatch compensation 有权
    多路差分放大器系统和跨导失配补偿方法

    公开(公告)号:US07265615B2

    公开(公告)日:2007-09-04

    申请号:US11172186

    申请日:2005-06-30

    IPC分类号: H03F3/45

    摘要: A multiple differential amplifier system and method for transconductance mismatch compensation which in a first phase connects to a differential switched input of a null amplifier, the differential signal input of the main amplifier, inverted, for compensating for offset errors and transconductance mismatches in the null amplifier; and storing in a null storage device connected to an auxiliary input of the null amplifier the output of the null amplifier representing the compensation for the offset error and transconductance mismatch of the null amplifier; and in a second phase connecting the differential switched input of the null amplifier to the differential feedback input of the main amplifier and storing in the main storage device connected to an auxiliary input of the main amplifier the output of the null amplifier representing the compensation for the main amplifier offset error and transconductance mismatch.

    摘要翻译: 一种用于跨导失配补偿的多差分放大器系统和方法,其在第一相中连接到零放大器的差分开关输入,主放大器的差分信号输入反相,用于补偿零放大器中的偏移误差和跨导失配 ; 并且存储在连接到零放大器的辅助输入端的零存储装置中,零放大器的输出表示零放大器的偏移误差和跨导失配的补偿; 并且在将所述零放大器的差分开关输入连接到所述主放大器的差分反馈输入的第二相中并且存储在连接到所述主放大器的辅助输入的主存储装置中,所述零放大器的输出表示所述主放大器的补偿 主放大器偏移误差和跨导失配。

    Micromachined semiconductor magnetic sensor
    8.
    发明授权
    Micromachined semiconductor magnetic sensor 有权
    微加工半导体磁传感器

    公开(公告)号:US06275034B1

    公开(公告)日:2001-08-14

    申请号:US09265660

    申请日:1999-03-10

    IPC分类号: G01R3302

    CPC分类号: G01R33/028

    摘要: A semiconductor magnetic field sensor including a substrate; a semiconductor moveable element suspended above the substrate, the moveable element being configured to have a current passed therethrough and to deflect perpendicularly with respect to an applied magnetic field; and at least one fixed semiconductor element arranged adjacent to the moveable element, the moveable element being deflected to or away from the fixed element in response to an applied magnetic field. In an alternative embodiment of the invention, there is provided a semiconductor magnetic field sensor including a substrate; first and second semiconductor moveable beams suspended above the surface of the substrate, the first and second beams being configured to have equal and opposite currents passed therethrough and to deflect perpendicularly with respect to an applied magnetic field; and at least one first and second fixed semiconductor elements arranged adjacent to the first and second beams, respectively, the first and second beams being deflected to or away from the respective first and second fixed elements in response to an applied magnetic field.

    摘要翻译: 一种包括衬底的半导体磁场传感器; 悬浮在衬底上方的半导体可移动元件,所述可移动元件构造成具有通过其的电流并相对于所施加的磁场垂直偏转; 以及与所述可移动元件相邻布置的至少一个固定半导体元件,所述可移动元件响应于所施加的磁场被偏转到所述固定元件或远离所述固定元件。 在本发明的替代实施例中,提供一种包括衬底的半导体磁场传感器; 第一和第二半导体可移动光束悬挂在基板的表面上方,第一和第二光束被配置为具有相等和相反的电流通过,并相对于施加的磁场垂直偏转; 以及分别与第一和第二光束相邻布置的至少一个第一和第二固定半导体元件,第一和第二光束响应于施加的磁场偏转到或远离相应的第一和第二固定元件。