公开(公告)号：US20080217651A1

公开(公告)日：2008-09-11

申请号：US11829257

申请日：2007-07-27

Applicant: Chee-Wee Liu ,  Chu-Hsuan Lin ,  Cheng-The Yu

Inventor： Chee-Wee Liu ,  Chu-Hsuan Lin ,  Cheng-The Yu

IPC: H01L31/028 ,  H01L31/0224

CPC classification number: H01L31/113 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photodetector is provided. The photodetector includes a base piece; a germanium layer mounted on the base piece and including a first area and a second area; a first metal electrode mounted on the first area; an insulation layer mounted on the second area; and a second metal electrode mounted on the insulation layer.

Abstract translation: 提供光电检测器。 光检测器包括基片; 安装在所述基片上并包括第一区域和第二区域的锗层; 安装在第一区域上的第一金属电极; 安装在所述第二区域上的绝缘层; 以及安装在所述绝缘层上的第二金属电极。

公开(公告)号：US20090194152A1

公开(公告)日：2009-08-06

申请号：US12025226

申请日：2008-02-04

Applicant: Chee-Wee Liu ,  Cheng-Yeh Yu ,  Wen-Yuan Chen ,  Chu-Hsuan Lin

Inventor： Chee-Wee Liu ,  Cheng-Yeh Yu ,  Wen-Yuan Chen ,  Chu-Hsuan Lin

IPC: H01L31/0336 ,  H01L31/18

CPC classification number: H01L31/022425 ,  B82Y20/00 ,  H01L31/022433 ,  H01L31/028 ,  H01L31/035254 ,  H01L31/035281 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/1812 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: A thin-film solar cell having a hetero-junction of semiconductor and the fabrication method thereof are provided. Instead of the conventional hetero-junction of III-V semiconductor or homo-structure of IV semiconductor, the thin-film solar cell according to the present invention adopts a novel hetero-junction structure of IV semiconductor to improve the cell efficiency thereof. By adjusting the amount of layer sequences and the thickness of the hetero-junction structure, the cell efficiency of the thin-film solar cell according to the present invention is also optimized.

Abstract translation: 提供了具有半导体异质结的薄膜太阳能电池及其制造方法。 代替III-V族半导体的常规异质结或IV半导体的同构结构，根据本发明的薄膜太阳能电池采用IV半导体的新型异质结结构来提高其电池效率。 通过调整层序列的量和异质结结构的厚度，也优化了本发明的薄膜太阳能电池的电池效率。