Light emitting diode having a dual dopant contact layer
    1.
    发明授权
    Light emitting diode having a dual dopant contact layer 有权
    具有双掺杂剂接触层的发光二极管

    公开(公告)号:US07132695B2

    公开(公告)日:2006-11-07

    申请号:US10605513

    申请日:2003-10-05

    IPC分类号: H10L31/0304

    摘要: A light emitting diode with a dual dopant contact layer. The light emitting diode includes a substrate, a light emitting stacked structure formed on the substrate, a dual dopant contact layer formed on the light emitting stacked structure, and a transparent conductive oxide layer formed on the dual dopant contact layer. The dual dopant contact layer has a plurality of p-type dopants and a plurality of n-type dopants after being fabricated.

    摘要翻译: 具有双掺杂剂接触层的发光二极管。 发光二极管包括基板,形成在基板上的发光层叠结构,形成在发光层叠结构上的双掺杂剂接触层和形成在双掺杂剂接触层上的透明导电氧化物层。 双掺杂剂接触层在制造之后具有多个p型掺杂剂和多种n型掺杂剂。

    Optoelectronic device
    2.
    发明授权
    Optoelectronic device 有权
    光电器件

    公开(公告)号:US09324691B2

    公开(公告)日:2016-04-26

    申请号:US12830059

    申请日:2010-07-02

    摘要: An optoelectronic device comprising: a substrate; a plurality of semiconductor units electrically connected with each other and disposed jointly on the substrate, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between thereof; a plurality of first electrodes disposed on each first semiconductor layer respectively; and a plurality of second electrodes disposed on each second semiconductor layer respectively, wherein at least one of the first electrodes comprises a first extension, and at least one of the second electrodes comprises a second extension, wherein at least one of the first extension and the second extension comprises a curve which is not parallel to the edge of the semiconductor units.

    摘要翻译: 一种光电器件,包括:基板; 多个半导体单元彼此电连接并且共同设置在所述基板上,其中每个半导体单元包括第一半导体层,第二半导体层和插入其间的有源区; 分别设置在每个第一半导体层上的多个第一电极; 以及分别设置在每个第二半导体层上的多个第二电极,其中所述第一电极中的至少一个包括第一延伸部,并且所述第二电极中的至少一个包括第二延伸部,其中所述第一延伸部和 第二延伸部包括不与半导体单元的边缘平行的曲线。

    OPTOELECTRONIC DEVICE
    3.
    发明申请
    OPTOELECTRONIC DEVICE 有权
    光电器件

    公开(公告)号:US20110089442A1

    公开(公告)日:2011-04-21

    申请号:US12830059

    申请日:2010-07-02

    IPC分类号: H01L33/38

    摘要: An optoelectronic device comprising: a substrate; a plurality of semiconductor units electrically connected with each other and disposed jointly on the substrate, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between thereof; a plurality of first electrodes disposed on each first semiconductor layer respectively; and a plurality of second electrodes disposed on each second semiconductor layer respectively, wherein at least one of the first electrodes comprises a first extension, and at least one of the second electrodes comprises a second extension, wherein at least one of the first extension and the second extension comprises a curve which is not parallel to the edge of the semiconductor units.

    摘要翻译: 一种光电器件,包括:基板; 多个半导体单元彼此电连接并且共同设置在所述基板上,其中每个半导体单元包括第一半导体层,第二半导体层和插入其间的有源区; 分别设置在每个第一半导体层上的多个第一电极; 以及分别设置在每个第二半导体层上的多个第二电极,其中所述第一电极中的至少一个包括第一延伸部,并且所述第二电极中的至少一个包括第二延伸部,其中所述第一延伸部和 第二延伸部包括不与半导体单元的边缘平行的曲线。