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    Photoresist monomers, polymers thereof and photoresist compositions containing the same
    1.
    发明授权
    Photoresist monomers, polymers thereof and photoresist compositions containing the same 失效
    光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物

    公开(公告)号：US06602649B2

    公开(公告)日：2003-08-05

    申请号：US09882191

    申请日：2001-06-15

    申请人： Chi Hyeong Roh ,  Seung Hyuk Lee ,  Chan Seob Cho

    发明人： Chi Hyeong Roh ,  Seung Hyuk Lee ,  Chan Seob Cho

    IPC分类号： G03F7004

    CPC分类号： G03F7/0395

    摘要： Photoresist monomers which can be used to form photoresist polymers and photoresist compositions using the same which are suitable for photolithography processes employing a deep ultraviolet light source and copolymers thereof. Monomers are represented by following Formula 1: wherein, R1, is —OH or —R—OH; R represents substituted or unsubstituted linear or branched (C1-C10) alkylene, substituted or unsubstituted (C1-C10) alkylene comprising an ether linkage, substituted or unsubstituted (C1-C10) alkylene comprising an ester linkage, or substituted or unsubstituted (C1-C10) alkylene comprising an ketone moiety; and 1 is an integer of 1 or 2.

    摘要翻译： 可用于形成光刻胶聚合物和使用其的光刻胶组合物的光致抗蚀剂单体，其适用于采用深紫外光源及其共聚物的光刻工艺。 单体由下式1表示：其中R1是-OH或-R-OH; R代表取代或未取代的直链或支链（C1-C10）亚烷基，取代或未取代的（C1-C10）亚烷基，包括醚键， 包含酯键的取代或未取代的（C1-C10）亚烷基或包含酮部分的取代或未取代的（C1-C10）亚烷基; 和1是1或2的整数。

    Method and system for continuous line-type landing polysilicon contact (LPC) structures
    2.
    发明授权
    Method and system for continuous line-type landing polysilicon contact (LPC) structures 有权
    连续线型着陆多晶硅接触（LPC）结构的方法和系统

    公开(公告)号：US08318556B2

    公开(公告)日：2012-11-27

    申请号：US12704511

    申请日：2010-02-11

    申请人： Ping Ting Wang ,  Cheng Yang ,  Seung Hyuk Lee ,  Jin Gang Wu

    发明人： Ping Ting Wang ,  Cheng Yang ,  Seung Hyuk Lee ,  Jin Gang Wu

    IPC分类号： H01L29/72

    CPC分类号： H01L21/32139 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/0207 ,  H01L27/10855 ,  H01L27/10888 ,  H01L27/10891

    摘要： A method for making contact landing pad structures in a semiconductor integrated circuit device includes forming an isolation region and forming active regions in the semiconductor substrate. The active regions are separated by the isolation region, and each of the active regions includes one or more contact regions. The method includes forming a raised structure overlying the isolation region and disposed between a first and second contact regions. The method includes depositing a cap layer and forming an interlayer dielectric layer overlying the cap layer. The method includes depositing a photoresist layer overlying the interlayer dielectric layer and uses a mask pattern to selectively remove a portion of the photoresist layer to form a line type opening, which exposes a portion of the interlayer dielectric layer overlying at least the first and second contact regions. The method deposits a conductive fill material and performs a planarization process to form multiple conductive landing contact pads.

    摘要翻译： 一种用于在半导体集成电路器件中形成接触着陆焊盘结构的方法包括形成隔离区并在半导体衬底中形成有源区。 有源区域被隔离区隔开，并且每个有源区域包括一个或多个接触区域。 该方法包括形成覆盖隔离区域的凸起结构，并设置在第一和第二接触区域之间。 该方法包括沉积覆盖层并形成覆盖覆盖层的层间电介质层。 该方法包括沉积覆盖在层间电介质层上的光致抗蚀剂层，并且使用掩模图案来选择性地去除光致抗蚀剂层的一部分以形成线型开口，其暴露部分至少覆盖第一和第二接触的层间电介质层 地区。 该方法沉积导电填充材料并执行平坦化处理以形成多个导电着陆接触焊盘。

    METHOD AND SYSTEM FOR CONTINUOUS LINE-TYPE LANDING POLYSILICON CONTACT (LPC) STRUCTURES
    3.
    发明申请
    METHOD AND SYSTEM FOR CONTINUOUS LINE-TYPE LANDING POLYSILICON CONTACT (LPC) STRUCTURES 有权
    连续线型多极体接触（LPC）结构的方法和系统

    公开(公告)号：US20110042732A1

    公开(公告)日：2011-02-24

    申请号：US12704511

    申请日：2010-02-11

    申请人： Ping Ting Wang ,  Cheng Yang ,  Seung Hyuk Lee ,  Jin Gang Wu

    发明人： Ping Ting Wang ,  Cheng Yang ,  Seung Hyuk Lee ,  Jin Gang Wu

    IPC分类号： H01L29/772 ,  H01L21/336

    CPC分类号： H01L21/32139 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/0207 ,  H01L27/10855 ,  H01L27/10888 ,  H01L27/10891

    摘要： A method for making contact landing pad structures in a semiconductor integrated circuit device. The method includes forming an isolation region and forming active regions in the semiconductor substrate. The active regions are separated by the isolation region, and each of the active regions includes one or more contact regions. The method includes forming a raised structure between a first and second contact regions. The raised structure overlying the isolation region. The method includes depositing a cap layer and forming an interlayer dielectric layer overlying the cap layer. The method uses a mask pattern to selectively remove a portion of the photoresist layer to form a line type opening, which exposes a portion of the interlayer dielectric layer overlying at least the first and second contact regions. The method deposits a conductive fill material and performs a planarization process, whereby a plurality of conductive landing contact pads are formed.

    摘要翻译： 一种用于在半导体集成电路器件中制造接触着陆焊盘结构的方法。 该方法包括形成隔离区并在半导体衬底中形成有源区。 有源区域被隔离区隔开，并且每个有源区域包括一个或多个接触区域。 该方法包括在第一和第二接触区域之间形成凸起结构。 覆盖隔离区的凸起结构。 该方法包括沉积覆盖层并形成覆盖覆盖层的层间电介质层。 该方法使用掩模图案来选择性地去除光致抗蚀剂层的一部分以形成线型开口，其暴露部分至少覆盖第一和第二接触区域的层间电介质层。 该方法沉积导电填充材料并进行平面化处理，从而形成多个导电着陆接触垫。