摘要:
The present disclosure provides various methods for tool condition monitoring, including systems for implementing such monitoring. An exemplary method includes receiving data associated with a process performed on wafers by an integrated circuit manufacturing process tool; and monitoring a condition of the integrated circuit manufacturing process tool using the data. The monitoring includes evaluating the data based on an abnormality identification criterion, an abnormality filtering criterion, and an abnormality threshold to determine whether the data meets an alarm threshold. The method may further include issuing an alarm when the data meets the alarm threshold.
摘要:
The present disclosure provides various methods for tool condition monitoring, including systems for implementing such monitoring. An exemplary method includes receiving data associated with a process performed on wafers by an integrated circuit manufacturing process tool; and monitoring a condition of the integrated circuit manufacturing process tool using the data. The monitoring includes evaluating the data based on an abnormality identification criterion, an abnormality filtering criterion, and an abnormality threshold to determine whether the data meets an alarm threshold. The method may further include issuing an alarm when the data meets the alarm threshold.
摘要:
A method and system for removing control action effects from inline measurement data for tool condition monitoring is disclosed. An exemplary method includes determining a control action effect that contributes to an inline measurement, wherein the inline measurement indicates a wafer characteristic of a wafer processed by a process tool; and evaluating the inline measurement without the control action effect contribution to determine a condition of the process tool.
摘要:
A system and method for monitoring a process tool of an integrated circuit manufacturing system are disclosed. An exemplary method includes defining zones of an integrated circuit manufacturing process tool; grouping parameters of the integrated circuit manufacturing process tool based on the defined zones; and evaluating a condition of the integrated circuit manufacturing process tool based on the grouped parameters.
摘要:
A system and method for monitoring a process tool of an integrated circuit manufacturing system are disclosed. An exemplary method includes defining zones of an integrated circuit manufacturing process tool; grouping parameters of the integrated circuit manufacturing process tool based on the defined zones; and evaluating a condition of the integrated circuit manufacturing process tool based on the grouped parameters.
摘要:
A method and system for removing control action effects from inline measurement data for tool condition monitoring is disclosed. An exemplary method includes determining a control action effect that contributes to an inline measurement, wherein the inline measurement indicates a wafer characteristic of a wafer processed by a process tool; and evaluating the inline measurement without the control action effect contribution to determine a condition of the process tool.
摘要:
In accordance with an embodiment, a method for exception handling comprises accessing an exception type for an exception, filtering historical data based on at least one defined criterion to provide a data train comprising data sets, assigning a weight to each data set, and providing a current control parameter. The data sets each comprise a historical condition and a historical control parameter, and the weight assigned to each data set is based on each historical condition. The current control parameter is provided using the weight and the historical control parameter for each data set.
摘要:
A method of extending advanced process control (APC) models includes constructing an APC model table including APC model parameters of a plurality of products and a plurality of work stations. The APC model table includes empty cells and cells filled with existing APC model parameters. Average APC model parameters of the existing APC model parameters are calculated, and filled into the empty cells as initial values. An iterative calculation is performed to update the empty cells with updated values.
摘要:
System and method for implementing wafer acceptance test (“WAT”) advanced process control (“APC”) are described. In one embodiment, the method comprises performing a key process on a sample number of wafers of a lot of wafers; performing a key inline measurement related to the key process to produce metrology data for the wafers; predicting WAT data from the metrology data using an inline-to-WAT model; and using the predicted WAT data to tune a WAT APC process for controlling a tuning process or a process APC process.