公开(公告)号：US20050003671A1

公开(公告)日：2005-01-06

申请号：US10902315

申请日：2004-07-29

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  W.B. Shieh ,  J.Y. Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  W.B. Shieh ,  J.Y. Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/027 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

摘要翻译： 在形成半导体器件时，将介电材料沉积在布线之间的间隙中的方法包括形成盖层并形成间隙，沉积高密度等离子体化学气相沉积（HDPCVD）电介质材料。 第一和第二抗反射涂层可以形成在布线层上，第一和第二抗反射涂层由不同的材料制成。 防反射涂层和布线层都被蚀刻通过以形成由间隙分开的布线。 可以使用高密度等离子体化学气相沉积来填充布线之间的间隙。

公开(公告)号：US20060099824A1

公开(公告)日：2006-05-11

申请号：US11315904

申请日：2005-12-22

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  W.B. Shieh ,  J.Y. Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  W.B. Shieh ,  J.Y. Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/31

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

公开(公告)号：US6117345A

公开(公告)日：2000-09-12

申请号：US958460

申请日：1997-10-28

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/027 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/467 ,  H01L21/308 ,  H01L21/32 ,  H01L21/762

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838 ,  H01L21/0276 ,  H01L21/32136

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

公开(公告)号：US07078346B2

公开(公告)日：2006-07-18

申请号：US10902315

申请日：2004-07-29

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/311

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

公开(公告)号：US08062536B2

公开(公告)日：2011-11-22

申请号：US12729234

申请日：2010-03-22

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/467 ,  H01L21/32 ,  H01L21/308 ,  H01L21/762

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

摘要翻译： 在形成半导体器件时，将介电材料沉积在布线之间的间隙中的方法包括形成盖层并形成间隙，沉积高密度等离子体化学气相沉积（HDPCVD）电介质材料。 第一和第二抗反射涂层可以形成在布线层上，第一和第二抗反射涂层由不同的材料制成。 防反射涂层和布线层都被蚀刻通过以形成由间隙分开的布线。 可以使用高密度等离子体化学气相沉积来填充布线之间的间隙。

公开(公告)号：US20100173490A1

公开(公告)日：2010-07-08

申请号：US12729234

申请日：2010-03-22

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/768

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

摘要翻译： 在形成半导体器件时，将介电材料沉积在布线之间的间隙中的方法包括形成盖层并形成间隙，沉积高密度等离子体化学气相沉积（HDPCVD）电介质材料。 第一和第二抗反射涂层可以形成在布线层上，第一和第二抗反射涂层由不同的材料制成。 防反射涂层和布线层都被蚀刻通过以形成由间隙分开的布线。 可以使用高密度等离子体化学气相沉积来填充布线之间的间隙。

公开(公告)号：US07718079B2

公开(公告)日：2010-05-18

申请号：US09991196

申请日：2001-11-20

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/467 ,  H01L21/32 ,  H01L21/308 ,  H01L21/762

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

摘要翻译： 在形成半导体器件时，将介电材料沉积在布线之间的间隙中的方法包括形成盖层并形成间隙，沉积高密度等离子体化学气相沉积（HDPCVD）电介质材料。 第一和第二抗反射涂层可以形成在布线层上，第一和第二抗反射涂层由不同的材料制成。 防反射涂层和布线层都被蚀刻通过以形成由间隙分开的布线。 可以使用高密度等离子体化学气相沉积来填充布线之间的间隙。

公开(公告)号：US07514014B1

公开(公告)日：2009-04-07

申请号：US09546174

申请日：2000-04-11

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  W. B. Shieh ,  J. Y. Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  W. B. Shieh ,  J. Y. Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/467 ,  H01L21/32 ,  H01L21/308 ,  H01L21/762

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

公开(公告)号：US07271101B2

公开(公告)日：2007-09-18

申请号：US11315904

申请日：2005-12-22

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/311

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

摘要翻译： 在形成半导体器件时，将介电材料沉积在布线之间的间隙中的方法包括形成盖层并形成间隙，沉积高密度等离子体化学气相沉积（HDPCVD）电介质材料。 第一和第二抗反射涂层可以形成在布线层上，第一和第二抗反射涂层由不同的材料制成。 防反射涂层和布线层都被蚀刻通过以形成由间隙分开的布线。 可以使用高密度等离子体化学气相沉积来填充布线之间的间隙。