公开(公告)号：US08062536B2

公开(公告)日：2011-11-22

申请号：US12729234

申请日：2010-03-22

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/467 ,  H01L21/32 ,  H01L21/308 ,  H01L21/762

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

摘要翻译： 在形成半导体器件时，将介电材料沉积在布线之间的间隙中的方法包括形成盖层并形成间隙，沉积高密度等离子体化学气相沉积（HDPCVD）电介质材料。 第一和第二抗反射涂层可以形成在布线层上，第一和第二抗反射涂层由不同的材料制成。 防反射涂层和布线层都被蚀刻通过以形成由间隙分开的布线。 可以使用高密度等离子体化学气相沉积来填充布线之间的间隙。

公开(公告)号：US20100173490A1

公开(公告)日：2010-07-08

申请号：US12729234

申请日：2010-03-22

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/768

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

摘要翻译： 在形成半导体器件时，将介电材料沉积在布线之间的间隙中的方法包括形成盖层并形成间隙，沉积高密度等离子体化学气相沉积（HDPCVD）电介质材料。 第一和第二抗反射涂层可以形成在布线层上，第一和第二抗反射涂层由不同的材料制成。 防反射涂层和布线层都被蚀刻通过以形成由间隙分开的布线。 可以使用高密度等离子体化学气相沉积来填充布线之间的间隙。

公开(公告)号：US07718079B2

公开(公告)日：2010-05-18

申请号：US09991196

申请日：2001-11-20

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/467 ,  H01L21/32 ,  H01L21/308 ,  H01L21/762

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

摘要翻译： 在形成半导体器件时，将介电材料沉积在布线之间的间隙中的方法包括形成盖层并形成间隙，沉积高密度等离子体化学气相沉积（HDPCVD）电介质材料。 第一和第二抗反射涂层可以形成在布线层上，第一和第二抗反射涂层由不同的材料制成。 防反射涂层和布线层都被蚀刻通过以形成由间隙分开的布线。 可以使用高密度等离子体化学气相沉积来填充布线之间的间隙。

公开(公告)号：US07271101B2

公开(公告)日：2007-09-18

申请号：US11315904

申请日：2005-12-22

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/311

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

摘要翻译： 在形成半导体器件时，将介电材料沉积在布线之间的间隙中的方法包括形成盖层并形成间隙，沉积高密度等离子体化学气相沉积（HDPCVD）电介质材料。 第一和第二抗反射涂层可以形成在布线层上，第一和第二抗反射涂层由不同的材料制成。 防反射涂层和布线层都被蚀刻通过以形成由间隙分开的布线。 可以使用高密度等离子体化学气相沉积来填充布线之间的间隙。

公开(公告)号：US6117345A

公开(公告)日：2000-09-12

申请号：US958460

申请日：1997-10-28

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/027 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/467 ,  H01L21/308 ,  H01L21/32 ,  H01L21/762

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838 ,  H01L21/0276 ,  H01L21/32136

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

公开(公告)号：US07078346B2

公开(公告)日：2006-07-18

申请号：US10902315

申请日：2004-07-29

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  Wen-Bin Shieh ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/311

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

公开(公告)号：US06203863B1

公开(公告)日：2001-03-20

申请号：US09200893

申请日：1998-11-27

申请人： Chih-Chien Liu ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： B05D306

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/50 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31612 ,  H01L21/76834 ,  H01L21/76837

摘要： A method of gap filling by using HDPCVD. On a substrate having a conductive structure, a first oxide layer is formed to protect the conductive structure. While forming the first oxide layer no bias is applied. An argon flow with a high speed of etching/deposition is provided to form a second oxide layer. While forming the second oxide layer a triangular or trapezium profile is formed due to an etching effect to the corner. An argon flow with a low speed of etching/deposition is provided to form a third oxide layer. The gap filling is completed.

摘要翻译： 使用HDPCVD的间隙填充方法。 在具有导电结构的基板上形成第一氧化物层以保护导电结构。 当形成第一氧化物层时，不施加偏压。 提供具有高速蚀刻/沉积的氩气流以形成第二氧化物层。 在形成第二氧化物层的同时，由于对拐角的蚀刻效果，形成三角形或梯形轮廓。 提供具有低速蚀刻/沉积的氩气流以形成第三氧化物层。 间隙填充完成。

公开(公告)号：US06362101B1

公开(公告)日：2002-03-26

申请号：US08976605

申请日：1997-11-24

申请人： Ming-Sheng Yang ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Ming-Sheng Yang ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21302

摘要： A method for chemical mechanical polishing a component includes providing an oxide layer and forming at least one via through the oxide layer. A tungsten layer is formed within the via and over the oxide layer. A first chemical mechanical polishing step is carried out on a polishing pad using a first slurry having an oxidizing component and having a pH of approximately 2 to approximately 4 to remove the tungsten layer from over the oxide layer. A second chemical mechanical polishing step is carried out on the polishing pad using a second slurry having a pH of approximately 2 to approximately 4 to polish scratches out of the oxide layer.

公开(公告)号：US06809022B2

公开(公告)日：2004-10-26

申请号：US10397794

申请日：2003-03-25

申请人： Chih-Chien Liu ,  Juan-Yuan Wu ,  Water Lur

发明人： Chih-Chien Liu ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： H01L214763

CPC分类号： H01L21/02112 ,  C23C16/50 ,  H01L21/02107 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31612

摘要： A method for forming dielectric layers is described. Wiring lines are formed on a provided semiconductor substrate. Spacers are formed on the sidewalls of the wiring lines. A liner layer is formed on the wiring lines and on the spacers by a first HDPCVD step, such as unbiased, unclamped HDPCVD. A dielectric layer is formed on the liner layer to cover the wiring lines and to fill gaps between the wiring lines by a second HDPCVD step.

摘要翻译： 描述形成电介质层的方法。 配线在所提供的半导体衬底上形成。 间隔件形成在布线的侧壁上。 通过第一HDPCVD步骤，例如无偏压，未夹紧的HDPCVD，在布线和间隔物上形成衬垫层。 在衬垫层上形成介电层以覆盖布线，并通过第二HDPCVD步骤填充布线之间的间隙。

公开(公告)号：US06562731B2

公开(公告)日：2003-05-13

申请号：US09752470

申请日：2001-01-02

申请人： Chih-Chien Liu ,  Juan-Yuan Wu ,  Water Lur

发明人： Chih-Chien Liu ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： H01L2131

CPC分类号： H01L21/02112 ,  C23C16/50 ,  H01L21/02107 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31612

摘要： A method for forming dielectric layers is described. Wiring lines are formed on a provided semiconductor substrate. Spacers are formed on the sidewalls of the wiring lines. A liner layer is formed on the wiring lines and on the spacers by a first HDPCVD step, such as unbiased, unclamped HDPCVD. A dielectric layer is formed on the liner layer to cover the wiring lines and to fill gaps between the wiring lines by a second HDPCVD step.

摘要翻译： 描述形成电介质层的方法。 配线在所提供的半导体衬底上形成。 间隔件形成在布线的侧壁上。 通过第一HDPCVD步骤，例如无偏压，未夹紧的HDPCVD，在布线和间隔物上形成衬垫层。 在衬垫层上形成介电层以覆盖布线，并通过第二HDPCVD步骤填充布线之间的间隙。