公开(公告)号：US20130295753A1

公开(公告)日：2013-11-07

申请号：US13463942

申请日：2012-05-04

申请人： Chih-Hong HWANG ,  Chun-Lin CHANG ,  Nai-Han CHENG ,  Chi-Ming YANG ,  Chin-Hsiang LIN

发明人： Chih-Hong HWANG ,  Chun-Lin CHANG ,  Nai-Han CHENG ,  Chi-Ming YANG ,  Chin-Hsiang LIN

IPC分类号： H01L21/265 ,  C23C14/48

CPC分类号： H01J37/3171 ,  H01J37/1474 ,  H01J37/20 ,  H01J37/3023 ,  H01J37/3172 ,  H01J2237/12 ,  H01J2237/20228 ,  H01J2237/30477 ,  H01J2237/30483 ,  H01L21/265 ,  H01L21/68764

摘要： A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate.

公开(公告)号：US20130075623A1

公开(公告)日：2013-03-28

申请号：US13240951

申请日：2011-09-22

申请人： Nai-Han CHENG ,  Chin-Hsiang LIN ,  Chi-Ming YANG ,  Chun-Lin CHANG ,  Chih-Hong HWANG

发明人： Nai-Han CHENG ,  Chin-Hsiang LIN ,  Chi-Ming YANG ,  Chun-Lin CHANG ,  Chih-Hong HWANG

IPC分类号： H01J3/14 ,  G21K5/10

CPC分类号： H01J37/3171 ,  G21K5/00 ,  H01J3/14 ,  H01J37/05 ,  H01J37/147

摘要： An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer.

摘要翻译： 公开了一种多离子束注入装置和方法。 示例性装置包括发射至少两个离子束的离子束源; 离子束分析仪; 和多离子束角度入射控制系统。 离子束分析仪和多离子束角入射控制系统被配置为将发射的至少两个离子束引导到晶片。

公开(公告)号：US20130171336A1

公开(公告)日：2013-07-04

申请号：US13338885

申请日：2011-12-28

申请人： Nai-Han CHENG ,  Chi-Ming YANG ,  You-Hua CHOU ,  Kuo-Sheng CHUANG ,  Chin-Hsiang LIN

发明人： Nai-Han CHENG ,  Chi-Ming YANG ,  You-Hua CHOU ,  Kuo-Sheng CHUANG ,  Chin-Hsiang LIN

IPC分类号： C23C16/458 ,  B23Q7/00 ,  C23C14/50 ,  C23C16/52 ,  C23C14/54

CPC分类号： H01L21/68785 ,  C23C14/50 ,  C23C14/54 ,  C23C16/4582 ,  C23C16/52 ,  H01L21/67098 ,  H01L21/67288 ,  H01L21/6831 ,  Y10T29/49998

摘要： In a wafer processing method and a wafer processing system, a first property on a back side of a wafer is measured. The back side of the wafer is supported on a multi-zone chuck having a plurality of zones with controllable clamping forces. The wafer is secured to the multi-zone chuck by controlling the clamping forces in the corresponding zones in accordance with measured values of the first property in the zones.

摘要翻译： 在晶片处理方法和晶片处理系统中，测量晶片背面的第一特性。 晶片的背面被支撑在具有可控夹紧力的多个区域的多区域卡盘上。 通过根据区域中的第一属性的测量值控制相应区域中的夹紧力将晶片固定到多区域卡盘。