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    High performance semiconductor devices fabricated with strain-induced processes and methods for making same
    7.
    发明授权
    High performance semiconductor devices fabricated with strain-induced processes and methods for making same 有权
    用应变诱导工艺制造的高性能半导体器件及其制造方法

    公开(公告)号：US07394136B2

    公开(公告)日：2008-07-01

    申请号：US11194084

    申请日：2005-07-29

    申请人： Chung-Hu Ke ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chih-Hsin Ko ,  Chenming Hu

    发明人： Chung-Hu Ke ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chih-Hsin Ko ,  Chenming Hu

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7846 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/1033 ,  H01L29/78 ,  H01L29/7842

    摘要： A high performance semiconductor device and the method for making same is disclosed with an improved drive current. The semiconductor device has source and drain regions built on an active region, a length of the device being different than a width thereof. One or more isolation regions are fabricated surrounding the active region, the isolation regions are then filled with an predetermined isolation material whose volume shrinkage exceeds 0.5% after an anneal process. A gate electrode is formed over the active region, and one or more dielectric spacers are made next to the gate electrode. Then, a contact etch stopper layer is put over the device, wherein the isolation regions, spacers and contact etch layer contribute to modulating a net strain imposed on the active region so as to improve the drive current.

    摘要翻译： 公开了一种改进的驱动电流的高性能半导体器件及其制造方法。 半导体器件具有构建在有源区上的源极和漏极区域，器件的长度与其宽度不同。 在有源区周围制造一个或多个隔离区域，然后用退火处理后其体积收缩率超过0.5％的预定隔离材料填充隔离区域。 在有源区上形成栅电极，并且在栅电极旁边形成一个或多个电介质间隔物。 然后，接触蚀刻停止层放置在器件上，其中隔离区，间隔物和接触蚀刻层有助于调制施加在有源区上的净应变，以便改善驱动电流。

    High performance semiconductor devices fabricated with strain-induced processes and methods for making same
    8.
    发明授权
    High performance semiconductor devices fabricated with strain-induced processes and methods for making same 有权
    用应变诱导工艺制造的高性能半导体器件及其制造方法

    公开(公告)号：US06949443B2

    公开(公告)日：2005-09-27

    申请号：US10683901

    申请日：2003-10-10

    申请人： Chung-Hu Ke ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chih-Hsin Ko ,  Chenming Hu

    发明人： Chung-Hu Ke ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chih-Hsin Ko ,  Chenming Hu

    IPC分类号： H01L21/336 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/10 ,  H01L29/76 ,  H01L29/78 ,  H01L29/80

    CPC分类号： H01L29/7846 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/1033 ,  H01L29/78 ,  H01L29/7842

    摘要： A high performance semiconductor device and the method for making same is disclosed with an improved drive current. The semiconductor device has source and drain regions built on an active region, a length of the device being different than a width thereof. One or more isolation regions are fabricated surrounding the active region, the isolation regions are then filled with an predetermined isolation material whose volume shrinkage exceeds 0.5% after an anneal process. A gate electrode is formed over the active region, and one or more dielectric spacers are made next to the gate electrode. Then, a contact etch stopper layer is put over the device, wherein the isolation regions, spacers and contact etch layer contribute to modulating a net strain imposed on the active region so as to improve the drive current.

    摘要翻译： 公开了一种改进的驱动电流的高性能半导体器件及其制造方法。 半导体器件具有构建在有源区上的源极和漏极区域，器件的长度与其宽度不同。 在有源区周围制造一个或多个隔离区域，然后用退火处理后其体积收缩率超过0.5％的预定隔离材料填充隔离区域。 在有源区上形成栅电极，并且在栅电极旁边形成一个或多个电介质间隔物。 然后，接触蚀刻停止层放置在器件上，其中隔离区，间隔物和接触蚀刻层有助于调制施加在有源区上的净应变，以便改善驱动电流。