Transconductance amplifier based on self-biased cascode structure

    公开(公告)号:US11121677B1

    公开(公告)日:2021-09-14

    申请号:US16625671

    申请日:2016-01-26

    IPC分类号: H03F3/45 H03F1/22

    摘要: Provided in the present invention is a transconductance amplifier based on a self-biased cascode structure. The transconductance amplifier includes a self-biased cascode input-stage structure constituted by PMOS (P-channel Metal Oxide Semiconductor) input transistors M1, M2, M3 and M4, a self-biased cascode first-stage load structure constituted by NMOS (N-channel Metal Oxide Semiconductor) transistors M5, M6, M7 and M8, a second-stage common-source amplifier structure constituted by an NMOS transistor M9 and a PMOS transistor M10, a bias circuit structure constituted by NMOS transistors M11 and M12 and a PMOS transistor M13, an amplifier compensation capacitor Cc, an amplifier load capacitor CL, a reference current source Iref and a PMOS transistor M0 that provides a constant current source function. Further provided in the present invention is a transconductance amplifier based on a self-biased cascode structure, which adopts an NMOS transistor as an input transistor. Both input transistors and load transistors of a first-stage amplifier of the present invention adopt self-biased cascode structures, such that the output impedance and the DC gain of the first-stage amplifier are increased. Substrate voltages of the MOS transistors of the first-stage amplifier are provided by an amplifier bias circuit. Owing to a connection mode of the compensation capacitor Cc, a higher figure of merit is achieved.