Circuit protection system
    1.
    发明申请
    Circuit protection system 有权
    电路保护系统

    公开(公告)号:US20070019345A1

    公开(公告)日:2007-01-25

    申请号:US11174135

    申请日:2005-06-30

    IPC分类号: H02H9/00

    CPC分类号: H01L27/0266

    摘要: A system and method for protecting a circuit. The system includes a protection circuit that includes an inverter and a capacitor coupled to the inverter. The inverter and the capacitor are implemented using logic circuits of a circuit core, and the inverter shunts electrostatic discharge ESD current through the capacitor. According to the system and method disclosed herein, because the protection circuit shunt circuit shunts ESD current using logic circuits of the circuit core, ESD protection is achieved while not requiring large FETs. Also, the protection circuit protects circuits against ESD events that conventional FET cannot protect.

    摘要翻译: 一种用于保护电路的系统和方法。 该系统包括保护电路,该保护电路包括逆变器和耦合到逆变器的电容器。 逆变器和电容器使用电路核心的逻辑电路实现,并且逆变器分流通过电容器的静电放电ESD电流。 根据本文公开的系统和方法,由于保护电路并联电路使用电路核心的逻辑电路来分流ESD电流,所以在不需要大的FET的情况下实现ESD保护。 此外,保护电路保护电路免受常规FET无法保护的ESD事件。

    Electrostatic discharge testing
    2.
    发明申请
    Electrostatic discharge testing 失效
    静电放电试验

    公开(公告)号:US20070018670A1

    公开(公告)日:2007-01-25

    申请号:US11187401

    申请日:2005-07-21

    IPC分类号: G01R31/26

    CPC分类号: G01R31/002

    摘要: The present invention provides a system and method for electrostatic discharge (ESD) testing. The system includes a circuit that has a switch coupled to an input/output (I/O) circuit of a device under test (DUT), a charge source coupled to the switch, and a control circuit coupled to the switch, wherein the control circuit turns on the switch to discharge an ESD current from the charge source to the I/O circuit, and wherein the circuit is integrated into the DUT. According to the system and method disclosed herein, the system provides on-chip ESD testing of a DUT without requiring expensive and specialized test equipment.

    摘要翻译: 本发明提供一种用于静电放电(ESD)测试的系统和方法。 该系统包括电路,其具有耦合到被测器件(DUT)的输入/输出(I / O)电路的开关,耦合到开关的电荷源和耦合到开关的控制电路,其中控制 电路接通开关以将ESD电流从电荷源放电到I / O电路,并且其中电路集成到DUT中。 根据本文公开的系统和方法,该系统提供DUT的片上ESD测试,而不需要昂贵且专门的测试设备。

    Electrostatic discharge series protection
    3.
    发明申请
    Electrostatic discharge series protection 失效
    静电放电系列保护

    公开(公告)号:US20070138973A1

    公开(公告)日:2007-06-21

    申请号:US11300938

    申请日:2005-12-15

    IPC分类号: H05B37/00

    CPC分类号: H01L27/0248

    摘要: An improvement to a digital integrated circuit of the type having a functional circuit that is susceptible to damage from an electrostatic discharge. An electrostatic discharge protection element is placed in series with the functional circuit and disposed upstream in a normal direction of current flow from the functional circuit. The electrostatic discharge protection element includes at least one of a resistive choke that exhibits thermal runaway and an inductive choke.

    摘要翻译: 对具有易受静电放电损坏的功能电路的类型的数字集成电路的改进。 静电放电保护元件与功能电路串联放置并且设置在来自功能电路的电流的正常方向的上游。 静电放电保护元件包括具有热失控的电阻扼流圈和感应扼流圈中的至少一个。

    Electrostatic discharge testing
    4.
    发明授权
    Electrostatic discharge testing 失效
    静电放电试验

    公开(公告)号:US07375543B2

    公开(公告)日:2008-05-20

    申请号:US11187401

    申请日:2005-07-21

    IPC分类号: G01R31/26 H02H9/00

    CPC分类号: G01R31/002

    摘要: The present invention provides a system and method for electrostatic discharge (ESD) testing. The system includes a circuit that has a switch coupled to an input/output (I/O) circuit of a device under test (DUT), a charge source coupled to the switch, and a control circuit coupled to the switch, wherein the control circuit turns on the switch to discharge an ESD current from the charge source to the I/O circuit, and wherein the circuit is integrated into the DUT. According to the system and method disclosed herein, the system provides on-chip ESD testing of a DUT without requiring expensive and specialized test equipment.

    摘要翻译: 本发明提供一种用于静电放电(ESD)测试的系统和方法。 该系统包括电路,其具有耦合到被测器件(DUT)的输入/输出(I / O)电路的开关,耦合到开关的电荷源和耦合到开关的控制电路,其中控制 电路接通开关以将ESD电流从电荷源放电到I / O电路,并且其中电路集成到DUT中。 根据本文公开的系统和方法,该系统提供DUT的片上ESD测试,而不需要昂贵且专门的测试设备。

    Electrostatic discharge series protection
    5.
    发明授权
    Electrostatic discharge series protection 失效
    静电放电系列保护

    公开(公告)号:US07551414B2

    公开(公告)日:2009-06-23

    申请号:US11300938

    申请日:2005-12-15

    IPC分类号: H02H9/00

    CPC分类号: H01L27/0248

    摘要: An improvement to a digital integrated circuit of the type having a functional circuit that is susceptible to damage from an electrostatic discharge. An electrostatic discharge protection element is placed in series with the functional circuit and disposed upstream in a normal direction of current flow from the functional circuit. The electrostatic discharge protection element includes at least one of a resistive choke that exhibits thermal runaway and an inductive choke.

    摘要翻译: 对具有易受静电放电损坏的功能电路的类型的数字集成电路的改进。 静电放电保护元件与功能电路串联放置并且设置在来自功能电路的电流的正常方向的上游。 静电放电保护元件包括具有热失控的电阻扼流圈和感应扼流圈中的至少一个。

    Circuit protection system
    6.
    发明授权
    Circuit protection system 有权
    电路保护系统

    公开(公告)号:US07777996B2

    公开(公告)日:2010-08-17

    申请号:US11174135

    申请日:2005-06-30

    IPC分类号: H02H9/00

    CPC分类号: H01L27/0266

    摘要: A system and method for protecting a circuit. The system includes a protection circuit that includes an inverter and a capacitor coupled to the inverter. The inverter and the capacitor are implemented using logic circuits of a circuit core, and the inverter shunts electrostatic discharge ESD current through the capacitor. According to the system and method disclosed herein, because the protection circuit shunt circuit shunts ESD current using logic circuits of the circuit core, ESD protection is achieved while not requiring large FETs. Also, the protection circuit protects circuits against ESD events that conventional FET cannot protect.

    摘要翻译: 一种用于保护电路的系统和方法。 该系统包括保护电路,该保护电路包括逆变器和耦合到逆变器的电容器。 逆变器和电容器使用电路核心的逻辑电路实现,并且逆变器分流通过电容器的静电放电ESD电流。 根据本文公开的系统和方法,由于保护电路并联电路使用电路核心的逻辑电路来分流ESD电流,所以在不需要大的FET的情况下实现ESD保护。 此外,保护电路保护电路免受常规FET无法保护的ESD事件。

    Systems and Methods for Synchronous, Retimed Analog to Digital Conversion
    7.
    发明申请
    Systems and Methods for Synchronous, Retimed Analog to Digital Conversion 有权
    用于同步,重定时模数转换的系统和方法

    公开(公告)号:US20100194616A1

    公开(公告)日:2010-08-05

    申请号:US12669481

    申请日:2008-06-06

    IPC分类号: H03M1/12

    摘要: Various embodiments of the present invention provide systems and methods for analog to digital conversion. For example, a retimed analog to digital converter is disclosed that includes a first set of sub-level interleaves and a second set of sub-level interleaves. The first set of sub-level interleaves includes a first sub-level interleave with a first set of comparators synchronized to a first clock phase, and a second sub-level interleave with a second set of comparators synchronized to a second clock phase. The second set of sub-level interleaves includes a third sub-level interleave with a third set of comparators synchronized to a third clock phase, and a fourth sub-level interleave with a fourth set of comparators synchronized to a fourth clock phase. A global interleave selects one of the first set of comparators based at least in part on an output from the second set of sub-level interleaves, and one of the third set of comparators based at least in part on an output from the first set of sub-level interleaves. In some instances of the aforementioned embodiments, an output of the first sub-level interleave and an output of the second sub-level interleave are synchronized to the third clock phase, and an output of the third sub-level interleave and an output of the fourth sub-level interleave are synchronized to the first clock phase.

    摘要翻译: 本发明的各种实施例提供了用于模数转换的系统和方法。 例如,公开了一种重新定时的模数转换器,其包括第一组子电平交织和第二组子电平交织。 第一组子电平交织包括与第一时钟相位同步的第一组比较器的第一子电平交织以及与第二时钟相位同步的第二组比较器的第二子电平交织。 第二组子电平交织包括与第三组比较器同步到第三时钟相位的第三子电平交织以及与第四时钟相位同步的第四组比较器的第四子电平交织。 至少部分地基于来自第二组子电平交织组的输出和第三组比较器中的一个,至少部分地基于第一组比较器的输出,选择第一组比较器中的一个, 子级交错。 在上述实施例的一些情况下,第一子电平交织的输出和第二子电平交织的输出被同步到第三时钟相位,并且第三子电平交织的输出和 第四子电平交错同步到第一时钟相位。

    Electrostatic Discharge Protection Circuit Employing a Micro Electro-Mechanical Systems (MEMS) Structure
    8.
    发明申请
    Electrostatic Discharge Protection Circuit Employing a Micro Electro-Mechanical Systems (MEMS) Structure 有权
    采用微机电系统(MEMS)结构的静电放电保护电路

    公开(公告)号:US20090296292A1

    公开(公告)日:2009-12-03

    申请号:US12128108

    申请日:2008-05-28

    IPC分类号: H02H9/00 H01H59/00

    CPC分类号: H01H59/0009 H02H9/046

    摘要: An ESD protection circuit for protecting a host circuit coupled to a signal pad from an ESD event occurring at the signal pad includes at least one MEMS switch which is electrically connected to the signal pad. The MEMS switch includes a first contact structure adapted for connection to the signal pad, and a second contact structure adapted for connection to a voltage supply source. The first and second contact structures are coupled together during the ESD event for shunting an ESD current from the signal pad to the voltage supply source. The first and second contact structures are electrically isolated from one another in the absence of the ESD event. At least one of the first and second contact structures includes a passivation layer for reducing contact adhesion between the first and second contact structures.

    摘要翻译: 用于保护耦合到信号垫的主机电路与在信号焊盘处发生的ESD事件的ESD保护电路包括至少一个电连接到信号焊盘的MEMS开关。 MEMS开关包括适于连接到信号焊盘的第一接触结构和适于连接到电压源的第二接触结构。 在ESD事件期间,第一和第二接触结构耦合在一起,用于将ESD电流从信号焊盘分流到电压源。 在没有ESD事件的情况下,第一和第二接触结构彼此电隔离。 第一和第二接触结构中的至少一个包括用于减小第一和第二接触结构之间的接触粘附的钝化层。

    Circuit simulation using step response analysis in the frequency domain
    9.
    发明授权
    Circuit simulation using step response analysis in the frequency domain 有权
    电路仿真使用频域中的阶跃响应分析

    公开(公告)号:US08798981B2

    公开(公告)日:2014-08-05

    申请号:US12143895

    申请日:2008-06-23

    IPC分类号: G06G7/56 G06F17/50

    摘要: A method for simulating a response of a circuit to an ESD input stimulus applied to the circuit includes the steps of: receiving a description of the circuit into a circuit simulation program, the circuit including at least one mutual inductance element indicative of magnetic coupling in the circuit; generating a linear approximation of nonlinear elements in the circuit at respective DC bias points of the nonlinear elements; obtaining a frequency domain transfer function of the circuit; obtaining a time domain impulse response of the circuit as a function of the frequency domain transfer function; integrating the time domain impulse response to yield a step response of the circuit, the step response being indicative of a response of the circuit to the ESD input stimulus; and analyzing the step response of the circuit to determine whether the circuit will operate within prescribed parameters corresponding to the circuit.

    摘要翻译: 用于模拟电路对应用于电路的ESD输入激励的响应的方法包括以下步骤:将电路的描述接收到电路仿真程序中,该电路包括指示在该电路中的磁耦合的至少一个互感元件 电路 在非线性元件的各个DC偏置点处产生电路中的非线性元件的线性近似; 获得电路的频域传递函数; 获得电路的时域脉冲响应作为频域传递函数的函数; 积分时域脉冲响应以产生电路的阶跃响应,阶跃响应指示电路对ESD输入刺激的响应; 以及分析电路的阶跃响应以确定电路是否将在对应于电路的规定参数内运行。

    DESIGN METHODOLOGY FOR PREVENTING FUNCTIONAL FAILURE CAUSED BY CDM ESD
    10.
    发明申请
    DESIGN METHODOLOGY FOR PREVENTING FUNCTIONAL FAILURE CAUSED BY CDM ESD 有权
    防止CDM ESD导致功能失效的设计方法

    公开(公告)号:US20100100859A1

    公开(公告)日:2010-04-22

    申请号:US12255002

    申请日:2008-10-21

    IPC分类号: G06F17/50

    摘要: A design methodology which prevents functional failure caused by CDM ESD events. A transistor model is used to model the final states of cells, and a simulator is then used to identify invulnerable cells. Cells that are potential failure sites are then identified. The cells which have been identified as being potential victims are replaced by the previously-identified invulnerable cells that have the identical logic function. On the other hand, if a cell with identical function cannot be found, an invulnerable buffer cell (that will not effect logic function) can be inserted in front of the potential victim transistor as protection. By replacing all the potential victim cells with cells which have been determined to be invulnerable, the resulting design will be guaranteed to be CDM ESD tolerant.

    摘要翻译: 一种防止CDM ESD事件引起功能故障的设计方法。 晶体管模型用于对细胞的最终状态建模,然后使用模拟器来识别不可侵入的细胞。 然后鉴定潜在的故障部位的细胞。 被识别为潜在受害者的细胞由具有相同逻辑功能的先前识别的无形细胞所取代。 另一方面,如果不能发现具有相同功能的单元,则可以在潜在的牺牲晶体管的前面插入不可变缓冲单元(不会影响逻辑功能)作为保护。 通过用已被确定为无害的细胞代替所有潜在的受害细胞,所得到的设计将被保证是CDM耐受性的。