摘要:
A system and method for protecting a circuit. The system includes a protection circuit that includes an inverter and a capacitor coupled to the inverter. The inverter and the capacitor are implemented using logic circuits of a circuit core, and the inverter shunts electrostatic discharge ESD current through the capacitor. According to the system and method disclosed herein, because the protection circuit shunt circuit shunts ESD current using logic circuits of the circuit core, ESD protection is achieved while not requiring large FETs. Also, the protection circuit protects circuits against ESD events that conventional FET cannot protect.
摘要:
The present invention provides a system and method for electrostatic discharge (ESD) testing. The system includes a circuit that has a switch coupled to an input/output (I/O) circuit of a device under test (DUT), a charge source coupled to the switch, and a control circuit coupled to the switch, wherein the control circuit turns on the switch to discharge an ESD current from the charge source to the I/O circuit, and wherein the circuit is integrated into the DUT. According to the system and method disclosed herein, the system provides on-chip ESD testing of a DUT without requiring expensive and specialized test equipment.
摘要:
An improvement to a digital integrated circuit of the type having a functional circuit that is susceptible to damage from an electrostatic discharge. An electrostatic discharge protection element is placed in series with the functional circuit and disposed upstream in a normal direction of current flow from the functional circuit. The electrostatic discharge protection element includes at least one of a resistive choke that exhibits thermal runaway and an inductive choke.
摘要:
The present invention provides a system and method for electrostatic discharge (ESD) testing. The system includes a circuit that has a switch coupled to an input/output (I/O) circuit of a device under test (DUT), a charge source coupled to the switch, and a control circuit coupled to the switch, wherein the control circuit turns on the switch to discharge an ESD current from the charge source to the I/O circuit, and wherein the circuit is integrated into the DUT. According to the system and method disclosed herein, the system provides on-chip ESD testing of a DUT without requiring expensive and specialized test equipment.
摘要:
An improvement to a digital integrated circuit of the type having a functional circuit that is susceptible to damage from an electrostatic discharge. An electrostatic discharge protection element is placed in series with the functional circuit and disposed upstream in a normal direction of current flow from the functional circuit. The electrostatic discharge protection element includes at least one of a resistive choke that exhibits thermal runaway and an inductive choke.
摘要:
A system and method for protecting a circuit. The system includes a protection circuit that includes an inverter and a capacitor coupled to the inverter. The inverter and the capacitor are implemented using logic circuits of a circuit core, and the inverter shunts electrostatic discharge ESD current through the capacitor. According to the system and method disclosed herein, because the protection circuit shunt circuit shunts ESD current using logic circuits of the circuit core, ESD protection is achieved while not requiring large FETs. Also, the protection circuit protects circuits against ESD events that conventional FET cannot protect.
摘要:
Various embodiments of the present invention provide systems and methods for analog to digital conversion. For example, a retimed analog to digital converter is disclosed that includes a first set of sub-level interleaves and a second set of sub-level interleaves. The first set of sub-level interleaves includes a first sub-level interleave with a first set of comparators synchronized to a first clock phase, and a second sub-level interleave with a second set of comparators synchronized to a second clock phase. The second set of sub-level interleaves includes a third sub-level interleave with a third set of comparators synchronized to a third clock phase, and a fourth sub-level interleave with a fourth set of comparators synchronized to a fourth clock phase. A global interleave selects one of the first set of comparators based at least in part on an output from the second set of sub-level interleaves, and one of the third set of comparators based at least in part on an output from the first set of sub-level interleaves. In some instances of the aforementioned embodiments, an output of the first sub-level interleave and an output of the second sub-level interleave are synchronized to the third clock phase, and an output of the third sub-level interleave and an output of the fourth sub-level interleave are synchronized to the first clock phase.
摘要:
An ESD protection circuit for protecting a host circuit coupled to a signal pad from an ESD event occurring at the signal pad includes at least one MEMS switch which is electrically connected to the signal pad. The MEMS switch includes a first contact structure adapted for connection to the signal pad, and a second contact structure adapted for connection to a voltage supply source. The first and second contact structures are coupled together during the ESD event for shunting an ESD current from the signal pad to the voltage supply source. The first and second contact structures are electrically isolated from one another in the absence of the ESD event. At least one of the first and second contact structures includes a passivation layer for reducing contact adhesion between the first and second contact structures.
摘要:
A method for simulating a response of a circuit to an ESD input stimulus applied to the circuit includes the steps of: receiving a description of the circuit into a circuit simulation program, the circuit including at least one mutual inductance element indicative of magnetic coupling in the circuit; generating a linear approximation of nonlinear elements in the circuit at respective DC bias points of the nonlinear elements; obtaining a frequency domain transfer function of the circuit; obtaining a time domain impulse response of the circuit as a function of the frequency domain transfer function; integrating the time domain impulse response to yield a step response of the circuit, the step response being indicative of a response of the circuit to the ESD input stimulus; and analyzing the step response of the circuit to determine whether the circuit will operate within prescribed parameters corresponding to the circuit.
摘要:
A design methodology which prevents functional failure caused by CDM ESD events. A transistor model is used to model the final states of cells, and a simulator is then used to identify invulnerable cells. Cells that are potential failure sites are then identified. The cells which have been identified as being potential victims are replaced by the previously-identified invulnerable cells that have the identical logic function. On the other hand, if a cell with identical function cannot be found, an invulnerable buffer cell (that will not effect logic function) can be inserted in front of the potential victim transistor as protection. By replacing all the potential victim cells with cells which have been determined to be invulnerable, the resulting design will be guaranteed to be CDM ESD tolerant.