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1.发明授权Process for the production of polycrystalline silicon mouldings substantially free of edge regions and the use of these mouldings 失效用于生产基本上不含边缘区域的多晶硅模制品以及这些模制品的使用的方法
公开(公告)号：US06153496A
公开(公告)日：2000-11-28
申请号：US41324
申请日：1998-03-12
CPC分类号： C30B29/06 , C30B33/00 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： The present invention relates to a process for the production of polycrystalline silicon mouldings substantially free of low lifetime edge regions and the use of these mouldings.
摘要翻译： 本发明涉及一种生产基本上没有低寿命边缘区域的多晶硅模制品的制造方法以及这些模制品的使用。
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2.发明申请Photovoltaic modules with a thermoplastic hot-melt adhesive layer and a process for their production 审中-公开具有热塑性热熔胶层的光伏组件及其制造方法公开(公告)号：US20070131274A1
公开(公告)日：2007-06-14
申请号：US11656668
申请日：2007-01-23
申请人： Gunther Stollwerck , Christian Hassler , Eckard Foltin , Gerhard Opelka , Bernd Post , Jurgen Hattig
发明人： Gunther Stollwerck , Christian Hassler , Eckard Foltin , Gerhard Opelka , Bernd Post , Jurgen Hattig
IPC分类号： H02N6/00
CPC分类号： B32B17/1077 , B32B17/10009 , H01L31/048 , H01L31/0481 , Y02E10/50
摘要： The invention relates to photovoltaic modules with a specific thermoplastic adhesive layer and the production thereof.
摘要翻译： 本发明涉及具有特定热塑性粘合剂层及其制备的光伏组件。
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3.发明申请Method of preparing a silicon nitride based substrate for semiconductor components 审中-公开制备半导体元件用氮化硅基基板的方法公开(公告)号：US20050194039A1
公开(公告)日：2005-09-08
申请号：US11125065
申请日：2005-05-09
IPC分类号： C04B35/584 , C04B35/589 , C04B35/591 , C04B35/593 , C04B41/52 , C04B41/89 , H01L31/0392 , H01L31/04 , H01L31/18 , H01L31/00
CPC分类号： C04B41/009 , C04B35/589 , C04B35/591 , C04B35/5935 , C04B41/52 , C04B41/89 , C04B2111/00844 , H01L31/03921 , H01L31/1804 , Y02E10/547 , Y02P70/521 , C04B41/4531 , C04B41/5035 , C04B41/5066 , C04B41/524 , C04B41/0072 , C04B41/5096 , C04B41/5353 , C04B41/4529 , C04B41/5011 , C04B41/5041 , C04B35/584
摘要： A process of producing a substrate is described. The process involves mixing intensively a starting mixture comprising silicon power, Si3N4, an silicon-organic polymer, and optionally an anhydrous organic pressing oil, thereby forming an intermediate mixture. The intermediate mixture is then shaped by a method selected from dry pressing, slip casting, hot pressing, extrusion casting, or tape casting, thereby forming an intermediate shaped article. The intermediate shaped article is then crosslinked and pyrolyzed in an inert atmosphere, thereby forming a crosslinked and pyrolyzed shaped article. The crosslinked and pyrolyzed shaped article is next nitrided, resulting in the formation of a nitrided shaped article, which may be optionally sintered, thereby forming the substrate. The substrates of the present invention may be used in the fabrication of semiconductor components, such as thin film solar cells.
摘要翻译： 对基板的制造方法进行说明。 该方法包括将包含硅粉末，Si 3 N 4 N 4，硅 - 有机聚合物和任选的无水有机压榨油的起始混合物强烈混合，从而形成中间体混合物 。 然后通过选自干压，滑移浇铸，热压，挤压铸造或带铸造的方法来形成中间体混合物，从而形成中间成型制品。 然后将中间成形制品在惰性气氛中交联并热解，从而形成交联和热解的成型制品。 接下来将交联和热解的成形制品氮化，形成氮化成形制品，其可任选地烧结，从而形成基材。 本发明的基板可以用于半导体部件的制造，例如薄膜太阳能电池。
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4.发明授权
公开(公告)号：US6013872A
公开(公告)日：2000-01-11
申请号：US61855
申请日：1998-04-17
申请人： Peter Woditsch , Christian Hassler , Wolfgang Krumbe , Horst Lange , Klaus Weber
发明人： Peter Woditsch , Christian Hassler , Wolfgang Krumbe , Horst Lange , Klaus Weber
IPC分类号： C30B29/06 , C30B11/00 , H01L31/0288 , H01L31/04 , H01L31/068 , H01L31/18 , H01L25/00
CPC分类号： C30B29/06 , C30B11/00 , H01L31/0288 , H01L31/068 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to directionally solidified, arsenic- and/or antimony-containing, multicrystalline silicon, a process for the production thereof and its use, and to solar cells containing this silicon and a process for the production thereof.
摘要翻译： 本发明涉及定向凝固的含砷和/或锑的多晶硅，其生产方法及其用途，以及含有该硅的太阳能电池及其生产方法。
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