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公开(公告)号:US20140183738A1
公开(公告)日:2014-07-03
申请号:US13730184
申请日:2012-12-28
申请人: Christopher J. Jezewski , James S. Clarke , Tejaswi K. Indukuri , FLorian Gstrein , Daniel J. Zierath
发明人: Christopher J. Jezewski , James S. Clarke , Tejaswi K. Indukuri , FLorian Gstrein , Daniel J. Zierath
IPC分类号: H01L23/538 , H01L21/768
CPC分类号: H01L21/76841 , H01L21/288 , H01L21/76843 , H01L21/76847 , H01L21/76871 , H01L21/76877 , H01L21/76879 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/53261 , H01L23/53266 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要: A metal interconnect comprising cobalt and method of forming a metal interconnect comprising cobalt are described. In an embodiment, a metal interconnect comprising cobalt includes a dielectric layer disposed on a substrate, an opening formed in the dielectric layer such that the substrate is exposed. The embodiment further includes a seed layer disposed over the substrate and a fill material comprising cobalt formed within the opening and on a surface of the seed layer.
摘要翻译: 描述了包括钴的金属互连和形成包含钴的金属互连的方法。 在一个实施例中,包括钴的金属互连包括设置在基板上的电介质层,形成在电介质层中的开口,使得基板被暴露。 该实施例还包括设置在基板上的种子层和在开口内和种子层的表面上形成的包含钴的填充材料。