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1.发明授权公开(公告)号：US07780893B2
公开(公告)日：2010-08-24
申请号：US11695850
申请日：2007-04-03
IPC分类号： B28B11/08
CPC分类号： B29C43/021 , B29C43/003 , B29C43/58 , B29C2043/025 , B29C2043/142 , B29C2043/5825 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/703 , G03F9/7042 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10S977/887
摘要： A method of patterning a substrate comprising first and second fields with a template, the template having a mold and a plurality of alignment forming areas and a plurality of template alignment marks, the method comprising: positioning a material on the first field of the substrate and a plurality of regions of the substrate, the plurality of regions laying outside of the first and second fields; positioning the mold and the substrate such that a desired spatial relationship between the mold and the first field of the substrate is obtained to define a pattern in the material on the first field of the substrate while concurrently defining a plurality of substrate alignment marks with the material in the plurality of regions of the substrate in superimposition with the plurality of alignment forming areas of the template; positioning a material on the second field of the substrate; and positioning the mold and the substrate to obtain a desired spatial relationship between the plurality of template alignment marks and the plurality of substrate alignment marks such that a desired spatial relationship between the mold and the second field of the substrate is obtained to define a pattern in the material on the second field of the substrate.
摘要翻译： 一种使用模板构图包括第一场和第二场的衬底的方法，所述模板具有模具和多个对准形成区域和多个模板对准标记，所述方法包括：将材料定位在所述衬底的第一场上，以及 所述基板的多个区域，所述多个区域布置在所述第一和第二场外; 定位模具和基板，使得获得模具和基板的第一场之间的期望的空间关系，以在基板的第一场上的材料中限定图案，同时用材料限定多个基板对准标记 在与所述模板的所述多个对准形成区域重叠的所述基板的所述多个区域中; 将材料定位在基板的第二场上; 并且定位所述模具和所述基板以获得所述多个模板对准标记与所述多个基板对准标记之间的期望的空间关系，使得获得所述模具和所述基板的所述第二场之间的期望的空间关系，以限定所述模板 衬底的第二场上的材料。
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2.发明申请公开(公告)号：US20070228610A1
公开(公告)日：2007-10-04
申请号：US11695850
申请日：2007-04-03
IPC分类号： B29C43/02
CPC分类号： B29C43/021 , B29C43/003 , B29C43/58 , B29C2043/025 , B29C2043/142 , B29C2043/5825 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/703 , G03F9/7042 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10S977/887
摘要： A method of patterning a substrate comprising first and second fields with a template, the template having a mold and a plurality of alignment forming areas and a plurality of template alignment marks, the method comprising: positioning a material on the first field of the substrate and a plurality of regions of the substrate, the plurality of regions laying outside of the first and second fields; positioning the mold and the substrate such that a desired spatial relationship between the mold and the first field of the substrate is obtained to define a pattern in the material on the first field of the substrate while concurrently defining a plurality of substrate alignment marks with the material in the plurality of regions of the substrate in superimposition with the plurality of alignment forming areas of the template; positioning a material on the second field of the substrate; and positioning the mold and the substrate to obtain a desired spatial relationship between the plurality of template alignment marks and the plurality of substrate alignment marks such that a desired spatial relationship between the mold and the second field of the substrate is obtained to define a pattern in the material on the second field of the substrate.
摘要翻译： 一种使用模板构图包括第一场和第二场的衬底的方法，所述模板具有模具和多个对准形成区域和多个模板对准标记，所述方法包括：将材料定位在所述衬底的第一场上，以及 所述基板的多个区域，所述多个区域布置在所述第一和第二场外; 定位模具和基板，使得获得模具和基板的第一场之间的期望的空间关系，以在基板的第一场上的材料中限定图案，同时用材料限定多个基板对准标记 在与所述模板的所述多个对准形成区域重叠的所述基板的所述多个区域中; 将材料定位在基板的第二场上; 并且定位所述模具和所述基板以获得所述多个模板对准标记与所述多个基板对准标记之间的期望的空间关系，使得获得所述模具和所述基板的所述第二场之间的期望的空间关系，以限定所述模板 衬底的第二场上的材料。
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公开(公告)号：US20090035934A1
公开(公告)日：2009-02-05
申请号：US12182905
申请日：2008-07-30
IPC分类号： H01L21/4763
CPC分类号： H01L27/101 , H01L27/24
摘要： Fabricating a cross-point memory structure using two lithography steps with a top conductor and connector or memory element and a bottom conductor orthogonal to the top connector. A first lithography step followed by a series of depositions and etching steps patterns a first channel having a bottom conductor. A second lithography step followed by a series of depositions and etching steps patterns a second channel orthogonal to the first channel and having a memory element connecting the an upper conductor and the lower conductor at their overlaid intersections.
摘要翻译： 使用具有顶部导体和连接器或存储元件的两个光刻步骤和与顶部连接器正交的底部导体来制造交叉点存储器结构。 第一光刻步骤之后是一系列沉积和蚀刻步骤，图案化具有底部导体的第一通道。 随后是一系列沉积和蚀刻步骤的第二光刻步骤模拟与第一通道正交的第二通道，并且具有在其重叠的相交处连接上导体和下导体的存储元件。
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公开(公告)号：US20100323490A1
公开(公告)日：2010-12-23
申请号：US12853749
申请日：2010-08-10
IPC分类号： H01L21/02
CPC分类号： H01L27/101 , H01L27/24
摘要： Fabricating a cross-point memory structure using two lithography steps with a top conductor and connector or memory element and a bottom conductor orthogonal to the top connector. A first lithography step followed by a series of depositions and etching steps patterns a first channel having a bottom conductor. A second lithography step followed by a series of depositions and etching steps patterns a second channel orthogonal to the first channel and having a memory element connecting the an upper conductor and the lower conductor at their overlaid intersections.
摘要翻译： 使用具有顶部导体和连接器或存储元件的两个光刻步骤和与顶部连接器正交的底部导体来制造交叉点存储器结构。 第一光刻步骤之后是一系列沉积和蚀刻步骤，图案化具有底部导体的第一通道。 随后是一系列沉积和蚀刻步骤的第二光刻步骤模拟与第一通道正交的第二通道，并且具有在其重叠的相交处连接上导体和下导体的存储元件。
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公开(公告)号：US07795132B2
公开(公告)日：2010-09-14
申请号：US12182905
申请日：2008-07-30
IPC分类号： H01L21/4763
CPC分类号： H01L27/101 , H01L27/24
摘要： Fabricating a cross-point memory structure using two lithography steps with a top conductor and connector or memory element and a bottom conductor orthogonal to the top connector. A first lithography step followed by a series of depositions and etching steps patterns a first channel having a bottom conductor. A second lithography step followed by a series of depositions and etching steps patterns a second channel orthogonal to the first channel and having a memory element connecting the an upper conductor and the lower conductor at their overlaid intersections.
摘要翻译： 使用具有顶部导体和连接器或存储元件的两个光刻步骤和与顶部连接器正交的底部导体来制造交叉点存储器结构。 第一光刻步骤之后是一系列沉积和蚀刻步骤，图案化具有底部导体的第一通道。 随后是一系列沉积和蚀刻步骤的第二光刻步骤模拟与第一通道正交的第二通道，并且具有在其重叠的相交处连接上导体和下导体的存储元件。
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6.发明申请Method of Concurrently Patterning a Substrate Having a Plurality of Fields and a Plurality of Alignment Marks 审中-公开同时形成具有多个场和多个对准标记的基板的方法公开(公告)号：US20100278954A1
公开(公告)日：2010-11-04
申请号：US12835018
申请日：2010-07-13
IPC分类号： B28B11/08
CPC分类号： B29C43/021 , B29C43/003 , B29C43/58 , B29C2043/025 , B29C2043/142 , B29C2043/5825 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/703 , G03F9/7042 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10S977/887
摘要： Imprint lithography templates for patterning substrates are described. The templates include a section having a mold a first pattern of alignment forming areas and template alignment marks. The additional sections are generally devoid of a mold. One or more of the additional section may include the first pattern of a second pattern of alignment forming areas and template alignment marks. The second pattern may correspond to the first pattern.
摘要翻译： 描述用于图案化基板的印刷光刻模板。 模板包括具有模具的部分，其具有对准形成区域的第一图案和模板对准标记。 附加部分通常没有模具。 附加部分中的一个或多个可以包括对准形成区域和模板对准标记的第二图案的第一图案。 第二图案可以对应于第一图案。
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公开(公告)号：US20090133751A1
公开(公告)日：2009-05-28
申请号：US12324120
申请日：2008-11-26
申请人： Sidlgata V. Sreenivasan , Shrawan Singhal , Christopher Mark Melliar-Smith , Frank Y. Xu , Byung-Jin Choi
发明人： Sidlgata V. Sreenivasan , Shrawan Singhal , Christopher Mark Melliar-Smith , Frank Y. Xu , Byung-Jin Choi
IPC分类号： H01L31/00
CPC分类号： H01L51/447 , H01L51/0015 , H01L51/424 , H01L2251/105 , Y02E10/549
摘要： Solar cells having at least one electron acceptor layer and at least one electron donor layer forming a patterned p-n junction are described. Electron acceptor layer may be formed by patterning formable N-type material between a template and an electrode layer, and solidifying the formable N-type material.
摘要翻译： 描述具有至少一个电子受体层和形成图案化p-n结的至少一个电子给体层的太阳能电池。 可以通过在模板和电极层之间构图可形成的N型材料并固化可形成的N型材料来形成电子受体层。
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公开(公告)号：US3998718A
公开(公告)日：1976-12-21
申请号：US659042
申请日：1976-02-18
IPC分类号： H01J27/20 , H01J37/305 , C23C15/00
CPC分类号： H01J37/3053 , H01J27/20
摘要： To adapt ion milling of thin film devices to the requirements of large scale industrial production a configuration of ion source and device holders is proposed which allows the simultaneous processing of a large number of devices. In the proposed configuration ions are emitted radially from a cylindrical source and strike surfaces to be patterned on devices attached to device holders which rotate and revolve around the ion source in planetary fashion.
摘要翻译： 为了使薄膜器件的离子铣削适应于大规模工业生产的要求，提出了允许大量器件的同时处理的离子源和器件保持器的配置。 在所提出的配置中，离子从圆柱形源径向发射并且撞击待连接到器件保持器的器件上的表面，该器件保持器以行星方式围绕离子源旋转和旋转。
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