公开(公告)号：US08445122B2

公开(公告)日：2013-05-21

申请号：US12338281

申请日：2008-12-18

申请人： Chrystel Deguet ,  Laurent Clavelier ,  Franck Fournel ,  Jean-Sebastien Moulet

发明人： Chrystel Deguet ,  Laurent Clavelier ,  Franck Fournel ,  Jean-Sebastien Moulet

IPC分类号： G11C11/22 ,  H01L21/02

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B5/743 ,  G11B9/1472 ,  G11B9/149 ,  Y10T428/115

摘要： A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.

摘要翻译： 数据存储介质包括其表面上具有电极层的载体衬底和沿着电极层延伸的敏感材料层，所述敏感材料层通过局部电场的作用被局部地改变为两个电气状态。 参考平面全局平行于敏感材料层延伸，并且被配置为容纳用于与电极层组合施加静电场的至少一个元件，该电极层包括具有至多等于100nm的尺寸的多个导电部分 在平行于参考平面的至少一个方向上并且由至少一个电绝缘区隔开，其中至少一些导电部分电互连，导电部分在敏感材料层内限定数据写/读位置。

公开(公告)号：US08318555B2

公开(公告)日：2012-11-27

申请号：US13125953

申请日：2009-10-29

申请人： Thomas Signamarcheix ,  Franck Fournel ,  Laurent Clavelier ,  Chrystel Deguet

发明人： Thomas Signamarcheix ,  Franck Fournel ,  Laurent Clavelier ,  Chrystel Deguet

IPC分类号： H01L21/84

CPC分类号： H01L21/76254

摘要： A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallization of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface.

摘要翻译： 一种混合基板的制造方法，其特征在于，制备包括混合层和下层电绝缘连续层的第一基板，由第一单晶区域和第二相邻非晶区域构成的混合层，构成第 第一基板的自由表面。 第二衬底被结合到第一衬底，第二衬底在其表面上包括具有预定晶体取向的参考层。 第一衬底通过至少非晶区域的疏水分子键合而结合到第二衬底。 根据参考层的结晶取向进行至少部分非晶区域至固相的再结晶，两个基板在键合界面处分离。

公开(公告)号：US08309431B2

公开(公告)日：2012-11-13

申请号：US10577175

申请日：2004-10-28

申请人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard ,  Konstantin Bourdelle ,  Aurélie Tauzin ,  Franck Fournel

发明人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard ,  Konstantin Bourdelle ,  Aurélie Tauzin ,  Franck Fournel

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.

摘要翻译： 一种用于自支撑转移细层的方法，其中将至少一种离子注入相对于源 - 衬底表面的指定深度的源极 - 衬底中。 施加加强件以与源 - 基板紧密接触，并且源 - 基板在特定时间段内在特定温度下进行热处理，以便在基本上在指定深度处产生脆弱的掩埋区域而不产生薄层， 相对于源极 - 基板的其余部分，在表面和脆化的掩埋层之间限定为热分离。 将受控的局部能量脉冲施加到源 - 衬底，以引起薄层的自支撑分离。

公开(公告)号：US08252663B2

公开(公告)日：2012-08-28

申请号：US12817784

申请日：2010-06-17

申请人： Franck Fournel

发明人： Franck Fournel

IPC分类号： H01L21/30

CPC分类号： H01L21/187

摘要： A method of transferring a thin layer from a source substrate having a surface layer of a first material along a free surface thereof to a target substrate having at least one surface layer of a second material along a free surface thereof, where the first material differs from the second material, includes forming within the surface layer of the source substrate a weakened zone delimiting a thin layer with respect to the free surface, and assembling the free surface of the source substrate to the free surface of the target substrate in a stack of alternating layers comprising the first and second materials, so that there are, on either side of an interface formed by bringing the free surfaces into intimate contact. The cumulative thicknesses of the layers of the first material are substantially equal to the cumulative thickness of the layers of the second material, the layers having thicknesses at least equal to 50 microns and at least 1000 times the depth at which the weakened zone is formed. The thin layer is detached by applying at least partially thermal energy to fracture the weakened zone.

摘要翻译： 一种从具有第一材料的表面层的源底板沿着其自由表面转移薄层到具有至少一个第二材料的表面层的目标衬底沿其自由表面的方法，其中第一材料不同于 所述第二材料包括在所述源极基板的表面层内形成相对于所述自由表面限定薄层的弱化区域，以及将所述源极基板的自由表面以交替的堆叠组装到所述目标基板的自由表面 包括第一和第二材料的层，使得在通过使自由表面紧密接触形成的界面的任一侧上存在。 第一材料的层的累积厚度基本上等于第二材料的层的累积厚度，这些层的厚度至少等于50微米，并且是形成弱化区的深度的至少1000倍。 通过施加至少部分热能来破坏弱化区来分离薄层。

公开(公告)号：US20070281445A1

公开(公告)日：2007-12-06

申请号：US10577175

申请日：2004-10-28

申请人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard ,  Konstantin Bourdelle ,  Aurelie Tauzin ,  Franck Fournel

发明人： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard ,  Konstantin Bourdelle ,  Aurelie Tauzin ,  Franck Fournel

IPC分类号： H01L21/304

CPC分类号： H01L21/76254

摘要： A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.

摘要翻译： 一种用于自支撑转移细层的方法，其中将至少一种离子注入相对于源 - 衬底表面的指定深度的源极 - 衬底中。 施加加强件以与源 - 基板紧密接触，并且源 - 基板在特定时间段内在特定温度下进行热处理，以便在基本上在指定深度处产生脆弱的掩埋区域而不产生薄层， 相对于源极 - 基板的其余部分，在表面和脆化的掩埋层之间限定为热分离。 将受控的局部能量脉冲施加到源 - 衬底，以引起薄层的自支撑分离。

公开(公告)号：US08871607B2

公开(公告)日：2014-10-28

申请号：US12663096

申请日：2008-06-06

申请人： Thomas Signamarcheix ,  Franck Fournel ,  Hubert Moriceau

发明人： Thomas Signamarcheix ,  Franck Fournel ,  Hubert Moriceau

IPC分类号： H01L21/30 ,  H01L21/8238 ,  H01L21/762 ,  H01L21/8258 ,  H01L21/84

CPC分类号： H01L21/8258 ,  H01L21/76254 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84

摘要： A method for producing a hybrid substrate, including a support substrate, a continuous buried insulator layer and, on this continuous layer, a hybrid layer including alternating zones of a first material and at least one second material, wherein these two materials are different by their nature and/or their crystallographic characteristics. The method forms a hybrid layer, including alternating zones of first and second materials, on a homogeneous substrate, assembles this hybrid layer, the continuous insulator layer and the support substrate, and eliminates a part at least of the homogeneous substrate, before or after the assembling.

摘要翻译： 一种制造混合基板的方法，包括支撑基板，连续埋层绝缘体层，并且在该连续层上，包括第一材料和至少一种第二材料的交替区域的混合层，其中这两种材料由它们 性质和/或其晶体学特征。 该方法形成混合层，包括在均匀基底上的第一和第二材料的交替区，组装该混合层，连续绝缘体层和支撑衬底，并且在第一和第二材料之前或之后形成至少均匀的衬底的部分 组装。

公开(公告)号：US07985469B2

公开(公告)日：2011-07-26

申请号：US11718859

申请日：2005-11-03

申请人： Yves Samson ,  Franck Fournel ,  Joel Eymery

发明人： Yves Samson ,  Franck Fournel ,  Joel Eymery

IPC分类号： B32B5/16 ,  B32B7/00 ,  B05D3/00 ,  B05D7/00

CPC分类号： H01F1/009 ,  B82Y25/00 ,  B82Y30/00 ,  C30B29/68 ,  Y10T428/24893 ,  Y10T428/25 ,  Y10T428/2991 ,  Y10T428/31504

摘要： The invention relates to a method for realizing a particle network comprising a particle depositing step, capable of self-organizing with a determined increment along a first direction, onto a substrate exhibiting a property that permits an interaction between the substrate and the particles and modulated along the first direction with a period adapted to said increment. A substantial interaction thus subsists between each of the particles and its neighboring particles along the first direction.

摘要翻译： 本发明涉及一种用于实现粒子网络的方法，该粒子网络包括粒子沉积步骤，能够沿着第一方向以确定的增量自组织到具有允许衬底和粒子之间的相互作用并且被调制的性质的衬底上 第一方向具有适应于所述增量的周期。 因此，沿着第一方向在每个颗粒和其相邻颗粒之间存在实质的相互作用。

公开(公告)号：US20110163410A1

公开(公告)日：2011-07-07

申请号：US12663096

申请日：2008-06-06

申请人： Thomas Signamarcheix ,  Franck Fournel ,  Hubert Moriceau

发明人： Thomas Signamarcheix ,  Franck Fournel ,  Hubert Moriceau

IPC分类号： H01L29/06 ,  H01L21/762

CPC分类号： H01L21/8258 ,  H01L21/76254 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84

摘要： A method for producing a hybrid substrate, including a support substrate, a continuous buried insulator layer and, on this continuous layer, a hybrid layer including alternating zones of a first material and at least one second material, wherein these two materials are different by their nature and/or their crystallographic characteristics. The method forms a hybrid layer, including alternating zones of first and second materials, on a homogeneous substrate, assembles this hybrid layer, the continuous insulator layer and the support substrate, and eliminates a part at least of the homogeneous substrate, before or after the assembling.

摘要翻译： 一种制造混合基板的方法，包括支撑基板，连续埋层绝缘体层，并且在该连续层上，包括第一材料和至少一种第二材料的交替区域的混合层，其中这两种材料由它们 性质和/或其晶体学特征。 该方法形成混合层，包括在均匀基底上的第一和第二材料的交替区，组装该混合层，连续绝缘体层和支撑衬底，并且在第一和第二材料之前或之后形成至少均匀的衬底的部分 组装。

公开(公告)号：US20100221891A1

公开(公告)日：2010-09-02

申请号：US12705039

申请日：2010-02-12

申请人： FRANCK FOURNEL ,  Thomas Signamarcheix ,  Laurent Clavelier ,  Chrystel Deguet

发明人： FRANCK FOURNEL ,  Thomas Signamarcheix ,  Laurent Clavelier ,  Chrystel Deguet

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated.

摘要翻译： 制造混合基板的方法包括制备单晶第一基板以获得两个表面部分。 制备临时衬底，其包括混合层，沿其延伸一个表面部分并且由第一区域和相邻的不同第二区域的非晶材料形成，第二区域形成第一衬底的至少部分自由表面。 第一衬底通过在至少非晶区上分子键合而与第一表面部分具有相同的晶体取向而与另一表面部分结合。 选择性地承载根据第一基板的晶体取向的至少一部分非晶区域的固相重结晶，并分离两个表面部分。

公开(公告)号：US06991944B2

公开(公告)日：2006-01-31

申请号：US10915769

申请日：2004-08-10

申请人： Olivier Rayssac ,  Beryl Blondeau ,  Hubert Moriceau ,  Christelle Lagahe-Blanchard ,  Franck Fournel

发明人： Olivier Rayssac ,  Beryl Blondeau ,  Hubert Moriceau ,  Christelle Lagahe-Blanchard ,  Franck Fournel

IPC分类号： H01L21/302

CPC分类号： H01L21/2007 ,  H01L21/02032 ,  H01L21/76254 ,  Y10S438/974

摘要： This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step.

摘要翻译： 本发明涉及一种用具有不同热特性的材料处理多层晶片的方法，该方法包括可产生二次缺陷的高温热处理步骤，其特征在于该方法包括在高温之前的晶片表面制备步骤 温度热处理步骤。