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公开(公告)号:US08131954B2
公开(公告)日:2012-03-06
申请号:US12338420
申请日:2008-12-18
申请人: Chun-Yi Tu , Te-Chang Tseng , Hideki Arakawa , Takeshi Nakayama
发明人: Chun-Yi Tu , Te-Chang Tseng , Hideki Arakawa , Takeshi Nakayama
IPC分类号: G06F12/00
CPC分类号: G06F12/0246 , G11C16/0483 , G11C16/10
摘要: A memory device is provided. The memory device includes a memory array formed by a plurality of multi level cells, a determining circuit and a data reading circuit. The memory array includes a plurality of page units, each including a main data and an auxiliary data corresponding to the main data, wherein the auxiliary data includes a plurality of flag bits. The determining circuit generates a determination bit according to the flag bits. The data reading circuit obtains information corresponding to the main data according to the determination bit.
摘要翻译: 提供存储器件。 存储器件包括由多个多电平单元形成的存储器阵列,确定电路和数据读取电路。 存储器阵列包括多个页面单元,每个页面单元包括主数据和与主数据相对应的辅助数据,其中辅助数据包括多个标志位。 确定电路根据标志位产生确定位。 数据读取电路根据确定位获取与主数据相对应的信息。
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公开(公告)号:US07778087B2
公开(公告)日:2010-08-17
申请号:US12335784
申请日:2008-12-16
申请人: Chun-Yi Tu , Te-Chang Tseng , Hideki Arakawa , Takeshi Nakayama
发明人: Chun-Yi Tu , Te-Chang Tseng , Hideki Arakawa , Takeshi Nakayama
IPC分类号: G11C16/04
CPC分类号: G11C16/10
摘要: A memory programming method is provided. A first programming operation is performed to program a multi level cell from an initial state to a first target state, which corresponds to a storage data and has a first threshold voltage range. A flag bit of the NAND flash is set to a first state to indicate that the first programming operation has been performed. A second programming operation is performed to program the multi level cell from the first target state to a second target state, which corresponds to the storage data and has a second threshold voltage range. The flag bit is set to a second state to indicate that the second programming operation has been performed.
摘要翻译: 提供了存储器编程方法。 执行第一编程操作以将多级单元从初始状态编程到对应于存储数据的第一目标状态,并具有第一阈值电压范围。 NAND闪存的标志位被设置为第一状态以指示已经执行了第一编程操作。 执行第二编程操作以将多级单元从第一目标状态编程为对应于存储数据并具有第二阈值电压范围的第二目标状态。 标志位被设置为第二状态以指示已经执行了第二编程操作。
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公开(公告)号:US07903470B2
公开(公告)日:2011-03-08
申请号:US12335189
申请日:2008-12-15
申请人: Te-Chang Tseng , Chun-Yi Tu , Hideki Arakawa , Yamasaki Kyoji
发明人: Te-Chang Tseng , Chun-Yi Tu , Hideki Arakawa , Yamasaki Kyoji
CPC分类号: G11C16/16
摘要: An integrated circuit is provided. The integrated circuit includes a memory device and a discharge circuit. The discharge circuit discharges the well voltage line and the first voltage line of the memory device after the end of the erasing period and includes a first and second switch circuit and a first and second control voltage supplier. The first switch circuit is coupled between the well voltage line, the first voltage line and a second supplier. The second switch circuit is coupled between the first switch circuit and a reference voltage. The first control voltage supplier is coupled to the first switch circuit and supplies a first control voltage to turn on the first switch circuit during a first discharge period. The second control voltage supplier is coupled to the second switch circuit, and supplies a second control voltage to turn on the second switch circuit during a second discharge period.
摘要翻译: 提供集成电路。 集成电路包括存储器件和放电电路。 放电电路在擦除周期结束后对存储器件的阱电压线和第一电压线放电,并且包括第一和第二开关电路以及第一和第二控制电压供应器。 第一开关电路耦合在阱电压线,第一电压线和第二供电器之间。 第二开关电路耦合在第一开关电路和参考电压之间。 第一控制电压供应器耦合到第一开关电路,并且在第一放电期间提供第一控制电压以接通第一开关电路。 第二控制电压供应器耦合到第二开关电路,并且在第二放电周期期间提供第二控制电压以接通第二开关电路。
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公开(公告)号:US20090161440A1
公开(公告)日:2009-06-25
申请号:US12335189
申请日:2008-12-15
申请人: Te-Chang TSENG , Chun-Yi Tu , Hideki ARAKAWA , Yamasaki KYOJI
发明人: Te-Chang TSENG , Chun-Yi Tu , Hideki ARAKAWA , Yamasaki KYOJI
IPC分类号: G11C16/14
CPC分类号: G11C16/16
摘要: An integrated circuit is provided. The integrated circuit includes a memory device and a discharge circuit. The discharge circuit discharges the well voltage line and the first voltage line of the memory device after the end of the erasing period and includes a first and second switch circuit and a first and second control voltage supplier. The first switch circuit is coupled between the well voltage line, the first voltage line and a second supplier. The second switch circuit is coupled between the first switch circuit and a reference voltage. The first control voltage supplier is coupled to the first switch circuit and supplies a first control voltage to turn on the first switch circuit during a first discharge period. The second control voltage supplier is coupled to the second switch circuit, and supplies a second control voltage to turn on the second switch circuit during a second discharge period.
摘要翻译: 提供集成电路。 集成电路包括存储器件和放电电路。 放电电路在擦除周期结束后对存储器件的阱电压线和第一电压线进行放电,并且包括第一和第二开关电路以及第一和第二控制电压供应器。 第一开关电路耦合在阱电压线,第一电压线和第二供电器之间。 第二开关电路耦合在第一开关电路和参考电压之间。 第一控制电压供应器耦合到第一开关电路,并且在第一放电期间提供第一控制电压以接通第一开关电路。 第二控制电压供应器耦合到第二开关电路,并且在第二放电周期期间提供第二控制电压以接通第二开关电路。
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公开(公告)号:US20090273391A1
公开(公告)日:2009-11-05
申请号:US12434151
申请日:2009-05-01
申请人: Te-Chang TSENG , Chun-Yi Tu , Yamasaki Kyoji
发明人: Te-Chang TSENG , Chun-Yi Tu , Yamasaki Kyoji
IPC分类号: G05F1/10
CPC分类号: G11C16/30
摘要: A flash memory and a regulated voltage generator thereof. The regulated voltage generator includes a charge pump having an output terminal outputting a first voltage, a control circuit coupled to the output terminal of the charge pump and having first and second output terminals outputting a second voltage and a charge pump control signal, respectively, and a Field Effect Transistor (FET) in diode mode. The FET is coupled between the output terminal of the charge pump and the first output terminal of the control circuit. The charge pump adjusts the first voltage according to the charge pump control signal.
摘要翻译: 闪存及其调节电压发生器。 调节电压发生器包括具有输出端子输出第一电压的电荷泵,耦合到电荷泵的输出端的控制电路,并具有分别输出第二电压和电荷泵控制信号的第一和第二输出端子,以及 二极管模式下的场效应晶体管(FET)。 FET耦合在电荷泵的输出端和控制电路的第一输出端之间。 电荷泵根据电荷泵控制信号调节第一电压。
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公开(公告)号:US20090167094A1
公开(公告)日:2009-07-02
申请号:US12335062
申请日:2008-12-15
申请人: Te-Chang TSENG , Chun-Yi Tu , Yamasaki Kyoji
发明人: Te-Chang TSENG , Chun-Yi Tu , Yamasaki Kyoji
IPC分类号: H02J1/00
CPC分类号: G01R31/31721 , G01R31/3172 , Y10T307/696
摘要: A voltage adjusting circuit is provided. The voltage adjusting circuit for adjusting the output voltages supplied by voltage sources includes a test control device, a multiplexer, a comparator, and a built in self test (BIST) device. The test control device selects one of the voltage sources as a testing voltage source, and outputs a selecting command for selecting the testing voltage source and a target voltage corresponding to the testing voltage source. The multiplexer is coupled to the voltage sources, receives an enablement signal, and outputs a voltage supplied by the testing voltage source as a testing voltage according to the enablement signal. The comparator compares the voltage levels of the testing voltage and the target voltage, and outputs a comparison result. The BIST device receives the selecting command, outputs the enablement signal for enabling the testing voltage source according to the selecting command, and adjusts the voltage supplied by the testing voltage source to a predetermined voltage according to the comparison result.
摘要翻译: 提供电压调节电路。 用于调节由电压源提供的输出电压的电压调节电路包括测试控制装置,多路复用器,比较器和内置自检(BIST)装置。 测试控制装置选择一个电压源作为测试电压源,并且输出用于选择测试电压源的选择指令和对应于测试电压源的目标电压。 多路复用器耦合到电压源,接收使能信号,并根据启用信号输出由测试电压源提供的电压作为测试电压。 比较器比较测试电压和目标电压的电压电平,并输出比较结果。 BIST设备接收选择命令,根据选择命令输出启用测试电压源的使能信号,并根据比较结果将测试电压源提供的电压调整到预定电压。
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公开(公告)号:US08278952B2
公开(公告)日:2012-10-02
申请号:US12335062
申请日:2008-12-15
申请人: Te-Chang Tseng , Chun-Yi Tu , Yamasaki Kyoji
发明人: Te-Chang Tseng , Chun-Yi Tu , Yamasaki Kyoji
IPC分类号: G01R31/3187 , G01R31/26 , G01R31/14
CPC分类号: G01R31/31721 , G01R31/3172 , Y10T307/696
摘要: A voltage adjusting circuit is provided. The voltage adjusting circuit for adjusting the output voltages supplied by voltage sources includes a test control device, a multiplexer, a comparator, and a built in self test (BIST) device. The test control device selects one of the voltage sources as a testing voltage source, and outputs a selecting command for selecting the testing voltage source and a target voltage corresponding to the testing voltage source. The multiplexer is coupled to the voltage sources, receives an enablement signal, and outputs a voltage supplied by the testing voltage source as a testing voltage according to the enablement signal. The comparator compares the voltage levels of the testing voltage and the target voltage, and outputs a comparison result. The BIST device receives the selecting command, outputs the enablement signal for enabling the testing voltage source according to the selecting command, and adjusts the voltage supplied by the testing voltage source to a predetermined voltage according to the comparison result.
摘要翻译: 提供电压调节电路。 用于调节由电压源提供的输出电压的电压调节电路包括测试控制装置,多路复用器,比较器和内置自检(BIST)装置。 测试控制装置选择一个电压源作为测试电压源,并且输出用于选择测试电压源的选择指令和对应于测试电压源的目标电压。 多路复用器耦合到电压源,接收使能信号,并根据启用信号输出由测试电压源提供的电压作为测试电压。 比较器比较测试电压和目标电压的电压电平,并输出比较结果。 BIST设备接收选择命令,根据选择命令输出启用测试电压源的使能信号,并根据比较结果将测试电压源提供的电压调整到预定电压。
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