公开(公告)号：US20080225608A1

公开(公告)日：2008-09-18

申请号：US12049160

申请日：2008-03-14

Applicant: Chung-Ki LEE ,  Hyong-Yong LEE

Inventor： Chung-Ki LEE ,  Hyong-Yong LEE

IPC: G11C7/00

CPC classification number: G11C7/24 ,  G11C5/143 ,  G11C7/22 ,  G11C29/02 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028

Abstract: A semiconductor memory device and a control signal generating method thereof. The semiconductor memory device may include a voltage range detector configured to generate a voltage detecting signal corresponding to a range of a level of an external power voltage. A control signal generating portion may be used to generate a control signal corresponding to the range of the level of the external power voltage responsive to the voltage detecting signal. As a result, the semiconductor memory device can perform an operation for satisfying an access time characteristic according to a specification responsive to the control signal.

Abstract translation: 半导体存储器件及其控制信号产生方法。 半导体存储器件可以包括电压范围检测器，其被配置为产生对应于外部电源电压的电平的范围的电压检测信号。 可以使用控制信号产生部分来响应于电压检测信号产生对应于外部电源电压的电平的范围的控制信号。 结果，半导体存储器件可以根据控制信号执行根据规格满足访问时间特性的操作。