公开(公告)号：US07791960B2

公开(公告)日：2010-09-07

申请号：US12049160

申请日：2008-03-14

Applicant: Chung-Ki Lee ,  Hyong-Yong Lee

Inventor： Chung-Ki Lee ,  Hyong-Yong Lee

IPC: G11C7/00

CPC classification number: G11C7/24 ,  G11C5/143 ,  G11C7/22 ,  G11C29/02 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028

Abstract: A semiconductor memory device and a control signal generating method thereof. The semiconductor memory device may include a voltage range detector configured to generate a voltage detecting signal corresponding to a range of a level of an external power voltage. A control signal generating portion may be used to generate a control signal corresponding to the range of the level of the external power voltage responsive to the voltage detecting signal. As a result, the semiconductor memory device can perform an operation for satisfying an access time characteristic according to a specification responsive to the control signal.

Abstract translation: 半导体存储器件及其控制信号产生方法。 半导体存储器件可以包括电压范围检测器，其被配置为产生对应于外部电源电压的电平的范围的电压检测信号。 可以使用控制信号产生部分来响应于电压检测信号产生对应于外部电源电压的电平的范围的控制信号。 结果，半导体存储器件可以响应于控制信号执行满足访问时间特性的操作。

公开(公告)号：US20100245562A1

公开(公告)日：2010-09-30

申请号：US12732499

申请日：2010-03-26

Applicant: Chung-Ki LEE

Inventor： Chung-Ki LEE

IPC: H04N7/18

CPC classification number: G03B37/00 ,  B65H63/006 ,  G01N21/8914 ,  G01N21/952 ,  G01N2021/1774 ,  G01N2021/8918

Abstract: Disclosed a method and device for detecting a shape of a sheet roll. The method for detecting a shape of a sheet roll comprises positioning a camera on a cylindrical side surface of the sheet roll; photographing a cylindrical side surface while rotating the camera along the cylindrical side surface of a sheet roll; and determining whether there is a defect in a shape of a winding roll by analyzing a pattern of an image acquired by photographing.

Abstract translation: 公开了用于检测片材卷的形状的方法和装置。 用于检测片材卷的形状的方法包括将相机定位在片材卷的圆柱形侧表面上; 拍摄圆柱形侧表面，同时沿着片卷的圆柱形侧表面旋转照相机; 以及通过分析通过拍摄获取的图像的图案来确定卷绕辊的形状是否存在缺陷。

公开(公告)号：US20140241076A1

公开(公告)日：2014-08-28

申请号：US14188118

申请日：2014-02-24

Applicant: Hyung-Shin KWON ,  Jong-Hyoung Lim ,  Chang-Soo Lee ,  Chung-Ki Lee

Inventor： Hyung-Shin KWON ,  Jong-Hyoung Lim ,  Chang-Soo Lee ,  Chung-Ki Lee

IPC: G11C29/12

CPC classification number: G11C29/12005 ,  G11C7/12 ,  G11C8/08 ,  G11C16/3427 ,  G11C29/08 ,  G11C29/10 ,  G11C29/12 ,  G11C29/18 ,  G11C2029/1202

Abstract: A method of testing a semiconductor memory device is provided. Data is written to a plurality of memory cells disposed in a memory cell block of the semiconductor memory device. A first driving voltage is applied to a first group of word lines. A second driving voltage is applied to a second group of word lines. Each word line of the first group of the word lines is interposed between two neighboring word lines of the second group of the word lines. The first driving voltage has a voltage level different from that of the second driving voltage. The data is read from first memory cells coupled to the first group to determine whether each of the first memory cells is defective.

Abstract translation: 提供了一种测试半导体存储器件的方法。 将数据写入设置在半导体存储器件的存储单元块中的多个存储单元。 第一驱动电压被施加到第一组字线组。 第二驱动电压被施加到第二组字线。 第一组字线组的每个字线插入在第二组字线的两个相邻字线之间。 第一驱动电压具有与第二驱动电压不同的电压电平。 从耦合到第一组的第一存储器单元读取数据，以确定每个第一存储器单元是否有缺陷。

公开(公告)号：US20080225608A1

公开(公告)日：2008-09-18

申请号：US12049160

申请日：2008-03-14

Applicant: Chung-Ki LEE ,  Hyong-Yong LEE

Inventor： Chung-Ki LEE ,  Hyong-Yong LEE

IPC: G11C7/00

CPC classification number: G11C7/24 ,  G11C5/143 ,  G11C7/22 ,  G11C29/02 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028

Abstract: A semiconductor memory device and a control signal generating method thereof. The semiconductor memory device may include a voltage range detector configured to generate a voltage detecting signal corresponding to a range of a level of an external power voltage. A control signal generating portion may be used to generate a control signal corresponding to the range of the level of the external power voltage responsive to the voltage detecting signal. As a result, the semiconductor memory device can perform an operation for satisfying an access time characteristic according to a specification responsive to the control signal.

Abstract translation: 半导体存储器件及其控制信号产生方法。 半导体存储器件可以包括电压范围检测器，其被配置为产生对应于外部电源电压的电平的范围的电压检测信号。 可以使用控制信号产生部分来响应于电压检测信号产生对应于外部电源电压的电平的范围的控制信号。 结果，半导体存储器件可以根据控制信号执行根据规格满足访问时间特性的操作。