公开(公告)号：US06449037B2

公开(公告)日：2002-09-10

申请号：US09864398

申请日：2001-05-25

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

IPC分类号： G01N2100

CPC分类号： G01N21/21

摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

摘要翻译： 方法和装置检测在晶片表面存在缺陷，即微划痕。 光在晶片的表面上的介质上被投射到光不被可能位于介质下方的另一层反射的角度。 由晶片表面反射的光被转换为电信号，但是由于表面散射的任何光被尽可能地排除，从而有助于信号的形成。 电信号对应于从晶片表面反射的光的强度。 当光在晶片上扫描时，将电信号的值进行比较，以确定介质中是否存在缺陷。 因为投射到晶片表面上的光将被诸如微划痕的缺陷所散射，所以可以成功监测晶片是否存在这种微划痕。 特别地，可以检测到在介质中形成的微划痕的缺陷，而不管诸如图案层的介质之下的结构如何。

公开(公告)号：US06544802B1

公开(公告)日：2003-04-08

申请号：US09685094

申请日：2000-10-11

申请人： Chung-sam Jun ,  Pil-sik Hyun

发明人： Chung-sam Jun ,  Pil-sik Hyun

IPC分类号： H01L2100

CPC分类号： H01L21/67288 ,  G01R31/311

摘要： Wafer inspection system and method which are suitable for inspection of highly integrated semiconductor devices. The wafer inspection system includes an apparatus for selectively inspecting conductive pattern defects, which includes a sensor for scanning the surface of a wafer in a noncontact manner and an RLC circuit which is connected to the sensor and converts a signal obtained from the sensor into an electrical characteristic; and an image processing computer which is connected to the apparatus for selectively inspecting conductive pattern defects. Only conductive defects are selectively extracted, thereby increasing inspection efficiency.

摘要翻译： 适用于高度集成半导体器件检查的晶圆检查系统和方法。 晶片检查系统包括用于选择性地检查导电图案缺陷的装置，其包括用于以非接触方式扫描晶片表面的传感器和连接到传感器的RLC电路，并将从传感器获得的信号转换为电 特性; 以及图像处理计算机，其连接到用于选择性地检查导电图案缺陷的装置。 仅选择性地提取导电缺陷，从而提高检查效率。

公开(公告)号：US06528333B1

公开(公告)日：2003-03-04

申请号：US09584671

申请日：2000-06-01

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

IPC分类号： H01L2166

CPC分类号： G01N21/21

摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

公开(公告)号：US06515293B1

公开(公告)日：2003-02-04

申请号：US09671207

申请日：2000-09-28

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyun-suk Cho ,  Pil-sik Hyun

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyun-suk Cho ,  Pil-sik Hyun

IPC分类号： G01N2186

CPC分类号： H01L22/26 ,  G01B11/0625 ,  H01L22/12

摘要： A method of measuring the thickness of a thin layer, by which the thickness of a top layer formed on the surface of a wafer can be detected in real time, and an apparatus therefor. This method includes irradiating light onto a cell and obtaining luminance from reflected light, detecting the thickness of a thin layer in an oxide site which is adjacent to the cell, repeating the irradiating and detecting steps to obtain a plurality of luminance values from cells formed on the wafer and a plurality of thickness values of thin layers in oxide sites that are adjacent to the cells, and employing a thickness calculation formula for calculating the thickness of a top layer using the plurality of luminance values and plurality of thickness values obtained in the prior steps. The thickness of a thin layer is directly detected from the luminance of light reflected by the cell, so that it can be precisely detected in a non-destructive manner, thus making it possible to detect the thickness of a thin layer in real time during the manufacture of a semiconductor device.

摘要翻译： 测量薄层厚度的方法，通过该厚度可以实时检测在晶片表面上形成的顶层的厚度及其装置。 该方法包括将光照射到电池上并从反射光获得亮度，检测与电池相邻的氧化物部位中的薄层的厚度，重复照射和检测步骤，从而形成多个亮度值 所述晶片和与所述单元相邻的氧化物部位中的薄层的多个厚度值，并且使用使用所述多个亮度值和在先前获得的多个厚度值来计算顶层的厚度的厚度计算公式 脚步。 从单元反射的光的亮度直接检测薄层的厚度，从而可以以非破坏性的方式精确地检测薄层的厚度，从而使得可以实时地检测薄层的厚度 制造半导体器件。