公开(公告)号：US20220221505A1

公开(公告)日：2022-07-14

申请号：US17148371

申请日：2021-01-13

申请人： Cirrus Logic International Semiconductor Ltd.

发明人： Aleksey S. Khenkin ,  John C. Tucker ,  John L. Melanson ,  Jeffrey A. Weintraub

IPC分类号： G01R31/26 ,  G01R31/28

摘要： A method for screening a semiconductor device for production of excessive random telegraph sequence (RTS) noise includes measuring noise of the semiconductor device at a first temperature, changing the temperature of the semiconductor device to a second temperature different from the first temperature, measuring noise of the semiconductor device at the second temperature, extracting a characteristic of the measured noise at the first and second temperatures (e.g., standard deviation, HMM output, frequency domain spectrum of time domain noise measurement), making a comparison of the extracted first and second noise characteristics, and making a determination whether the semiconductor device produces excessive RTS noise based on whether the comparison is above a predetermined threshold. Two different bias conditions of the device may be employed rather than, or in addition to, the two different temperatures.