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公开(公告)号：US11674995B2
公开(公告)日：2023-06-13
申请号：US17148371
申请日：2021-01-13
CPC分类号： G01R31/2646 , G01R31/2875 , G01R31/2877
摘要： A method for screening a semiconductor device for production of excessive random telegraph sequence (RTS) noise includes measuring noise of the semiconductor device at a first temperature, changing the temperature of the semiconductor device to a second temperature different from the first temperature, measuring noise of the semiconductor device at the second temperature, extracting a characteristic of the measured noise at the first and second temperatures (e.g., standard deviation, HMM output, frequency domain spectrum of time domain noise measurement), making a comparison of the extracted first and second noise characteristics, and making a determination whether the semiconductor device produces excessive RTS noise based on whether the comparison is above a predetermined threshold. Two different bias conditions of the device may be employed rather than, or in addition to, the two different temperatures.
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公开(公告)号：US20220221505A1
公开(公告)日：2022-07-14
申请号：US17148371
申请日：2021-01-13
摘要： A method for screening a semiconductor device for production of excessive random telegraph sequence (RTS) noise includes measuring noise of the semiconductor device at a first temperature, changing the temperature of the semiconductor device to a second temperature different from the first temperature, measuring noise of the semiconductor device at the second temperature, extracting a characteristic of the measured noise at the first and second temperatures (e.g., standard deviation, HMM output, frequency domain spectrum of time domain noise measurement), making a comparison of the extracted first and second noise characteristics, and making a determination whether the semiconductor device produces excessive RTS noise based on whether the comparison is above a predetermined threshold. Two different bias conditions of the device may be employed rather than, or in addition to, the two different temperatures.
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公开(公告)号：US11188108B2
公开(公告)日：2021-11-30
申请号：US16984880
申请日：2020-08-04
发明人： Sunder Kidambi , Mohit Sood , Roderick D. Holley , John C. Tucker
摘要： A data acquisition system may include an input for receiving an input signal for the data acquisition system, a plurality of data paths including a first data path and a second data path, and a signal estimator configured to determine a magnitude of the input signal using estimation of the input signal and dynamically deactivate one of the first and second data paths based on the magnitude of the input signal.
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4.发明授权公开(公告)号：US10284217B1
公开(公告)日：2019-05-07
申请号：US15882640
申请日：2018-01-29
发明人： Edmund Mark Schneider , Daniel J. Allen , Aniruddha Satoskar , Seyedeh Maryam Mortazavi Zanjani , Brian P. Chesney , John C. Tucker , Christophe J. Amadi
摘要： In accordance with embodiments of the present disclosure, a processing system may include multiple selectable processing paths for processing an analog signal in order to reduce noise and increase dynamic range. Techniques are employed to transition between processing paths and calibrate operational parameters of the two paths in order to reduce or eliminate artifacts caused by switching between processing paths.
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公开(公告)号：US10080084B2
公开(公告)日：2018-09-18
申请号：US15198809
申请日：2016-06-30
CPC分类号： H04R3/06 , H04R29/004 , H04R2201/003
摘要： In accordance with embodiments of the present disclosure, a system may include a digital correcting network for correcting for an intrinsic highpass filter of a microelectromechanical systems (MEMS) microphone such that a combined phase and magnitude response of a cascade of the intrinsic highpass filter and the digital correcting network substantially approximates the response of a target highpass filter.
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公开(公告)号：US11652455B2
公开(公告)日：2023-05-16
申请号：US17173813
申请日：2021-02-11
发明人： Ravi K. Kummaraguntla , Christophe J. Amadi , John L. Melanson , Axel Thomsen , John C. Tucker , Eric J. King
IPC分类号： H03F3/387 , G01R31/3842 , G01R31/40 , H03F3/181
CPC分类号： H03F3/387 , G01R31/3842 , G01R31/40 , H03F3/181 , H03F2200/03 , H03F2200/375
摘要： A signal processing system may include a signal path and a chop management circuit. The signal path may comprise a chopper configured to chop a differential input signal to the signal path at a chopping frequency and a low-pass filter downstream of the chopper and configured to filter out intermodulation products of a direct current offset of the signal path and intermodulation products of an aggressor on the differential input signal in order to generate an output signal. The chop management circuit may be communicatively coupled to the chopper and configured to, based on operational parameters associated with the signal path, dynamically manage energy of one or more clock signals used to define the chopping frequency.
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公开(公告)号：US20180324525A1
公开(公告)日：2018-11-08
申请号：US15586023
申请日：2017-05-03
发明人： Vivek Saraf , Axel Thomsen , Ravi Kummaraguntla , John C. Tucker
CPC分类号： H04R3/04 , H03F3/185 , H03F2200/03 , H03F2200/18 , H03H7/40 , H04R3/00 , H04R2201/003
摘要： Input impedance biasing may be improved with an ultra-high-input-impedance biasing circuit having low temperature variation. The impedance biasing circuit may include a first transistor coupled to a first power supply and a second transistor coupled to a second power supply. A gate of the first transistor may be coupled to a gate of the second transistor at an intermediate bias node. The first transistor and the second transistor may provide a selected DC impedance at the intermediate bias node. The impedance may be used to provide low-pass and or high-pass filtering of audio signals and/or noise.
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公开(公告)号：US10123117B1
公开(公告)日：2018-11-06
申请号：US15586023
申请日：2017-05-03
发明人： Vivek Saraf , Axel Thomsen , Ravi Kummaraguntla , John C. Tucker
CPC分类号： H04R3/04 , H03F3/185 , H03F2200/03 , H03F2200/18 , H03H7/40 , H04R3/00 , H04R2201/003
摘要： Input impedance biasing may be improved with an ultra-high-input-impedance biasing circuit having low temperature variation. The impedance biasing circuit may include a first transistor coupled to a first power supply and a second transistor coupled to a second power supply. A gate of the first transistor may be coupled to a gate of the second transistor at an intermediate bias node. The first transistor and the second transistor may provide a selected DC impedance at the intermediate bias node. The impedance may be used to provide low-pass and or high-pass filtering of audio signals and/or noise.
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