公开(公告)号：US20220165907A1

公开(公告)日：2022-05-26

申请号：US17103792

申请日：2020-11-24

Applicant: Cisco Technology, Inc.

Inventor： Xunyuan ZHANG ,  Li LI ,  Prakash B. GOTHOSKAR ,  Soha NAMNABAT

IPC: H01L31/18 ,  H01L31/105 ,  H01L31/0368

Abstract: The embodiments of the present disclosure describe a stressed Ge PD and fabrications techniques for making the same. In one embodiment, a stressor material is deposited underneath an already formed Ge PD. To do so, wafer bonding can be used to bond the wafer containing the Ge PD to a second, handler wafer. Doing so provides support to remove the substrate of the wafer so that a stressor material (e.g., silicon nitride, diamond-like carbon, or silicon-germanium) can be disposed underneath the Ge PD. The stress material induces a stress or strain in the crystal lattice of the Ge which changes its bandgap and improves its responsivity.

公开(公告)号：US20230290898A1

公开(公告)日：2023-09-14

申请号：US18318593

申请日：2023-05-16

Applicant: Cisco Technology, Inc.

Inventor： Xunyuan ZHANG ,  Li LI ,  Prakash B. GOTHOSKAR ,  Soha NAMNABAT

IPC: H01L31/18 ,  H01L31/0368 ,  H01L31/105 ,  H01L31/036

CPC classification number: H01L31/1812 ,  H01L31/03682 ,  H01L31/105 ,  H01L31/1892 ,  H01L31/1808 ,  H01L31/036

Abstract: The embodiments of the present disclosure describe a stressed Ge PD and fabrications techniques for making the same. In one embodiment, a stressor material is deposited underneath an already formed Ge PD. To do so, wafer bonding can be used to bond the wafer containing the Ge PD to a second, handler wafer. Doing so provides support to remove the substrate of the wafer so that a stressor material (e.g., silicon nitride, diamond-like carbon, or silicon-germanium) can be disposed underneath the Ge PD. The stress material induces a stress or strain in the crystal lattice of the Ge which changes its bandgap and improves its responsivity.