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1.发明授权
公开(公告)号：US5958605A
公开(公告)日：1999-09-28
申请号：US969411
申请日：1997-11-10
CPC分类号： B82Y10/00 , G02B1/105 , G02B5/283 , G03F7/70958 , G21K1/062 , Y10T428/12576
摘要： A passivating overcoat bilayer is used for multilayer reflective coatings for extreme ultraviolet (EUV) or soft x-ray applications to prevent oxidation and corrosion of the multilayer coating, thereby improving the EUV optical performance. The overcoat bilayer comprises a layer of silicon or beryllium underneath at least one top layer of an elemental or a compound material that resists oxidation and corrosion. Materials for the top layer include carbon, palladium, carbides, borides, nitrides, and oxides. The thicknesses of the two layers that make up the overcoat bilayer are optimized to produce the highest reflectance at the wavelength range of operation. Protective overcoat systems comprising three or more layers are also possible.
摘要翻译： 钝化大衣双层用于极紫外（EUV）或软X射线应用的多层反射涂层，以防止多层涂层的氧化和腐蚀，从而提高EUV光学性能。 外涂层双层包含至少一层抵抗氧化和腐蚀的元素或复合材料的顶层之下的硅或铍层。 顶层材料包括碳，钯，碳化物，硼化物，氮化物和氧化物。 构成外涂层双层的两层的厚度被优化以在操作的波长范围产生最高的反射率。 包括三层或更多层的保护性外涂层系统也是可能的。
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公开(公告)号：US6002553A
公开(公告)日：1999-12-14
申请号：US202991
申请日：1994-02-28
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/325 , H01F10/3281 , G11B2005/3996 , G11B5/09
摘要： A magnetoresistive sensor element with a three-dimensional micro-architecture is capable of significantly improved sensitivity and highly localized measurement of magnetic fields. The sensor is formed of a multilayer film of alternately magnetic and nonmagnetic materials. The sensor is optimally operated in a current perpendicular to plane mode. The sensor is useful in magnetic read/write heads, for high density magnetic information storage and retrieval.
摘要翻译： 具有三维微架构的磁阻传感器元件能够显着改善磁场的灵敏度和高度局部化的测量。 传感器由交替磁性和非磁性材料的多层膜形成。 传感器在垂直于平面模式的电流中最佳运行。 该传感器可用于磁读/写磁头，用于高密度磁信息存储和检索。
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公开(公告)号：US5698113A
公开(公告)日：1997-12-16
申请号：US607055
申请日：1996-02-22
CPC分类号： G02B5/0891 , C23F4/00 , G03F7/70958
摘要： Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO.sub.2 overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates.
摘要翻译： 通过干蚀刻工艺从超抛光ZERODUR和熔融二氧化硅衬底中除去Mo / Si多层膜，在适当的加工条件下，在衬底表面图形或表面粗糙度上产生可忽略的变化。 两步干蚀刻工艺用含氟系气体除去SiO2覆盖层，然后用含氯气体移动钼和硅多层。 在再加工的底物上已经证明了初始正常入射极紫外（EUV）反射响应的完全恢复。
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4.发明授权Growth of multi-component alloy films with controlled graded chemical composition on sub-nanometer scale 有权具有亚纳米级控制分级化学成分的多组分合金薄膜的生长公开(公告)号：US06867149B2
公开(公告)日：2005-03-15
申请号：US10256324
申请日：2002-09-27
申请人： Sasa Bajt , Stephen P. Vernon
发明人： Sasa Bajt , Stephen P. Vernon
CPC分类号： H01J37/3491 , C23C14/3414 , C23C14/3464 , C23C14/548
摘要： The chemical composition of thin films is modulated during their growth. A computer code has been developed to design specific processes for producing a desired chemical composition for various deposition geometries. Good agreement between theoretical and experimental results was achieved.
摘要翻译： 薄膜的化学成分在其生长过程中被调制。 已经开发了计算机代码来设计用于生产用于各种沉积几何形状的所需化学组成的具体方法。 理论与实验结果达成了良好的一致。
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公开(公告)号：US06451176B1
公开(公告)日：2002-09-17
申请号：US09705980
申请日：2000-11-03
IPC分类号： C23C1446
CPC分类号： C23C14/46 , C23C14/564 , G03F1/24 , H01J37/3178 , H01J2237/022
摘要： A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.
摘要翻译： 用于拦截和捕获或反射在离子束溅射沉积中产生的带电粒子物质的方法和装置。 该装置涉及一种静电颗粒捕获器，其在目标材料沉积的基底附近产生静电场。 静电颗粒捕集阱由电极表面阵列组成，每个电极表面保持静电势，并且其表面平行或垂直于衬底的表面。 该方法包括通过在衬底附近产生静电场而实现的带电粒子的截取和捕获或反射，以及配置场以迫使带电粒子材料远离衬底。 静电带电粒子捕集器能够防止带电粒子沉积在基底上，从而能够沉积极低的缺陷密度膜，例如极紫外光刻（EUVL）系统的反射掩模所需要的。
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公开(公告)号：US20120250133A1
公开(公告)日：2012-10-04
申请号：US13423498
申请日：2012-03-19
IPC分类号： G02B26/00
CPC分类号： G02F1/293 , G02B26/001 , G02F1/015 , G02F2201/30 , G02F2202/10 , G02F2202/13 , G21K4/00 , G21K2201/06 , H04B10/505
摘要： A high sensitivity transient grating ultrafast radiation to optical image converter is based on a fixed transmission grating adjacent to a semiconductor substrate. X-rays or optical radiation passing through the fixed transmission grating is thereby modulated and produces a small periodic variation of refractive index or transient grating in the semiconductor through carrier induced refractive index shifts. An optical or infrared probe beam tuned just below the semiconductor band gap is reflected off a high reflectivity mirror on the semiconductor so that it double passes therethrough and interacts with the radiation induced phase grating therein. A small portion of the optical beam is diffracted out of the probe beam by the radiation induced transient grating to become the converted signal that is imaged onto a detector.
摘要翻译： 对光学图像转换器的高灵敏度瞬态光栅超快辐射基于与半导体衬底相邻的固定透射光栅。 因此通过固定透射光栅的X射线或光学辐射被调制，并且通过载流子引起的折射率偏移在半导体中产生折射率或瞬态光栅的小的周期性变化。 调谐在半导体带隙正下方的光学或红外探测光束从半导体上的高反射率镜反射，使得其双重通过，并与其中的辐射诱导相位光栅相互作用。 光束的一小部分被辐射诱导的瞬态光栅衍射出探测光束，成为被成像到检测器上的转换信号。
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公开(公告)号：US6150060A
公开(公告)日：2000-11-21
申请号：US227847
申请日：1999-01-11
申请人： Stephen P. Vernon
发明人： Stephen P. Vernon
摘要： A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.
摘要翻译： 使用透明基板或部分透明膜作为掩模的有源区的透射光刻掩模。 在面向照明系统的膜表面上沉积反射单层或多层涂层。 选择性地图案化（去除）涂层以形成透光（亮）区域。 涂层中的结构缺陷和缺陷对掩模母版图案的空间图像具有可忽略的影响，因为涂层用于将辐射从成像系统的入射光瞳反射出来。 类似地，膜的透明区域中的结构缺陷对发射的电磁场的幅度或相位几乎没有影响。 由于掩模“丢弃”而不是吸收不需要的辐射，与常规设计相比，它减少了光学吸收和降低了热负荷。 对于EUV应用，掩模避免了相位缺陷问题，并且与曝光期间的热负载无关。
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公开(公告)号：US08879137B2
公开(公告)日：2014-11-04
申请号：US13423498
申请日：2012-03-19
CPC分类号： G02F1/293 , G02B26/001 , G02F1/015 , G02F2201/30 , G02F2202/10 , G02F2202/13 , G21K4/00 , G21K2201/06 , H04B10/505
摘要： A high sensitivity transient grating ultrafast radiation to optical image converter is based on a fixed transmission grating adjacent to a semiconductor substrate. X-rays or optical radiation passing through the fixed transmission grating is thereby modulated and produces a small periodic variation of refractive index or transient grating in the semiconductor through carrier induced refractive index shifts. An optical or infrared probe beam tuned just below the semiconductor band gap is reflected off a high reflectivity mirror on the semiconductor so that it double passes therethrough and interacts with the radiation induced phase grating therein. A small portion of the optical beam is diffracted out of the probe beam by the radiation induced transient grating to become the converted signal that is imaged onto a detector.
摘要翻译： 对光学图像转换器的高灵敏度瞬态光栅超快辐射基于与半导体衬底相邻的固定透射光栅。 因此通过固定透射光栅的X射线或光学辐射被调制，并且通过载流子引起的折射率偏移在半导体中产生折射率或瞬态光栅的小的周期性变化。 调谐在半导体带隙正下方的光学或红外探测光束从半导体上的高反射率镜反射，使得其双重通过，并与其中的辐射诱导相位光栅相互作用。 光束的一小部分被辐射诱导的瞬态光栅衍射出探测光束，成为被成像到检测器上的转换信号。
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9.发明授权Maskless deposition technique for the physical vapor deposition of thin film and multilayer coatings with subnanometer precision and accuracy 失效无掩模沉积技术用于薄膜和多层涂层的物理气相沉积，具有亚纳米计精度和准确度
公开(公告)号：US06010600A
公开(公告)日：2000-01-04
申请号：US607054
申请日：1996-02-22
CPC分类号： C23C14/542 , C23C14/505
摘要： The invention is a method for the production of axially symmetric, graded and ungraded thickness thin film and multilayer coatings that avoids the use of apertures or masks to tailor the deposition profile. A motional averaging scheme permits the deposition of uniform thickness coatings independent of the substrate radius. Coating uniformity results from an exact cancellation of substrate radius dependent terms, which occurs when the substrate moves at constant velocity. If the substrate is allowed to accelerate over the source, arbitrary coating profiles can be generated through appropriate selection and control of the substrate center of mass equation of motion. The radial symmetry of the coating profile is an artifact produced by orbiting the substrate about its center of mass; other distributions are obtained by selecting another rotation axis. Consequently there is a direct mapping between the coating thickness and substrate equation of motion which can be used to tailor the coating profile without the use of masks and apertures.
摘要翻译： 本发明是用于生产轴向对称，分级和未分级厚度薄膜和多层涂层的方法，其避免使用孔或掩模来定制沉积轮廓。 运动平均方案允许沉积均匀的厚度涂层，而不依赖于基底半径。 涂层的均匀性是由于衬底半径相关项的准确消除，当衬底以恒定的速度移动时，会发生这种问题。 如果允许衬底在源上加速，则可以通过适当选择和控制衬底质心运动方程来产生任意涂层轮廓。 涂层轮廓的径向对称性是通过围绕其质心旋转基底而产生的假象; 通过选择另一个旋转轴来获得其他分布。 因此，在涂层厚度和底物运动方程之间存在直接映射，其可以用于在不使用掩模和孔的情况下调整涂层轮廓。
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