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    Method for producing a first electrode/active layer/second electrode stack
    3.
    发明授权
    Method for producing a first electrode/active layer/second electrode stack 有权

    公开(公告)号：US10559771B2

    公开(公告)日：2020-02-11

    申请号：US15736266

    申请日：2016-06-16

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ISORG ,  TRIXELL

    发明人： Jean-Marie Verilhac ,  Simon Charlot

    IPC分类号： H01L51/44 ,  H01L51/50 ,  H01L31/0224 ,  H01L51/52 ,  H01L51/56

    摘要： A process for producing a stack of a first electrode/active layer/second electrode, which stack is intended for an electronic device, in particular an organic photodetector or an organic solar cell, the process comprises the following steps: (a) depositing a first conductor layer on the front side of a substrate, in order to form the first electrode; and (b) depositing an active layer taking the form of a thin organic semiconductor layer, this layer including discontinuous zones; wherein this process further comprises the following steps: (d) depositing a resist layer on that side of the stack which is opposite the substrate, which is at least partially transparent; (e) exposing the resist layer via the back side of the substrate; (f) developing the resist layer; and (g) depositing a second conductor layer in order to form the conductive second electrode.

    METHOD OF MAKING A STACK OF THE TYPE COMPRISING A FIRST ELECTRODE, AN ACTIVE LAYER, AND A SECOND ELECTRODE
    5.
    发明申请
    METHOD OF MAKING A STACK OF THE TYPE COMPRISING A FIRST ELECTRODE, AN ACTIVE LAYER, AND A SECOND ELECTRODE 有权
    制造包含第一电极，活性层和第二电极的堆叠的堆叠的方法

    公开(公告)号：US20150144899A1

    公开(公告)日：2015-05-28

    申请号：US14404695

    申请日：2013-06-03

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ISORG

    发明人： Jean-Marie Verilhac ,  Simon Charlot

    IPC分类号： H01L51/00 ,  H01L51/44

    CPC分类号： H01L51/0002 ,  H01L51/0018 ,  H01L51/0023 ,  H01L51/0026 ,  H01L51/0583 ,  H01L51/102 ,  H01L51/424 ,  H01L51/441 ,  H01L51/442 ,  H01L51/444 ,  H01L2251/5392 ,  H01L2251/568 ,  Y02E10/549

    摘要： A method of making a stack of the type comprising a first electrode, an active layer, and a second electrode, for use in an electronic device, in particular of the organic photodetector type or the organic solar cell type, the method comprising the following steps: a) depositing a first layer (2) of conductive material on a substrate (1) in order to form the first electrode; b) depositing an active layer (3) in the form of a thin organic semiconductor layer, this layer including non-continuous zones (30); c) locally eliminating the first conductive layer (2) through the non-continuous zones (30) of the active layer by chemical attack; and d) depositing a second layer (4) of conductive material on the active layer (3) in order to form the second conductive electrode.

    摘要翻译： 一种制造包括第一电极，有源层和第二电极的类型的堆叠的方法，用于电子器件，特别是有机光电检测器类型或有机太阳能电池类型中的方法，该方法包括以下步骤 ：a）在衬底（1）上沉积导电材料的第一层（2）以便形成第一电极; b）以薄的有机半导体层的形式沉积有源层（3），该层包括非连续区（30）; c）通过化学侵蚀通过活性层的非连续区域（30）局部消除第一导电层（2）; 以及d）在所述有源层（3）上沉积导电材料的第二层（4），以便形成所述第二导电电极。

    Optoelectronic array device having an upper transparent electrode
    6.
    发明授权
    Optoelectronic array device having an upper transparent electrode 有权

    公开(公告)号：US10957743B2

    公开(公告)日：2021-03-23

    申请号：US16065802

    申请日：2016-12-19

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ISORG ,  TRIXELL

    发明人： Mohammed Benwadih ,  Jean-Marie Verilhac ,  Simon Charlot ,  Jérôme Joimel ,  Pierre Rohr

    IPC分类号： H01L27/30 ,  H01L51/44 ,  H01L27/146

    摘要： A matrix-array optoelectronic device includes a substrate on which a matrix array of what are called bottom electrodes is deposited; an active structure, which is preferably continuous and organic, arranged above the matrix-array of bottom electrodes, the structure being suitable for detecting light; and at least one what is called top electrode lying above the active structure, the top electrode being transparent to the light emitted or detected by the active structure; and at least one conductive element that is borne by the substrate without interposition of the active structure and that is connected to the top electrode by at least one vertical interconnection, the conductive element having an electrical conductivity greater than that of the top electrode. The device may also comprise a layer made of scintillator material, the layer being fastened to the top electrode, so as to form an x-ray imager.

    ELECTRONIC DEVICE INCLUDING AN ORGANIC OPTOELECTRONIC COMPONENT AND AN ORGANIC TRANSISTOR
    9.
    发明申请
    ELECTRONIC DEVICE INCLUDING AN ORGANIC OPTOELECTRONIC COMPONENT AND AN ORGANIC TRANSISTOR 有权
    包括有机光电元件和有机晶体管的电子器件

    公开(公告)号：US20160365403A1

    公开(公告)日：2016-12-15

    申请号：US15121584

    申请日：2015-02-25

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ISORG

    发明人： Mohammed Benwadih ,  Jean-Marie Verilhac

    IPC分类号： H01L27/32

    CPC分类号： H01L27/3274 ,  H01L27/307 ,  H01L27/3258 ,  H01L27/3262

    摘要： An electronic device which includes at least one optoelectronic component including a first active layer, a first electrode, and a second interface layer between the first layer and the first electrode; and at least one first field effect transistor including a first semiconductor portion, a first gate, and at least one third layer, between the first gate and the first semiconductor portion. The third layer is made of the same material as the second layer. The electronic device includes a second electrode and a fourth interface layer between the first layer and the second electrode and includes a second field effect transistor that includes a second semiconductor portion, a second gate, and at least one fifth layer between the second gate and the second semiconductor portion. The fifth layer is made of the same material as the fourth layer.

    摘要翻译： 一种电子器件，其包括在所述第一层和所述第一电极之间的包括第一有源层，第一电极和第二界面层的至少一个光电子部件; 以及包括第一半导体部分，第一栅极和至少一个第三层的至少一个第一场效应晶体管，位于第一栅极和第一半导体部分之间。 第三层由与第二层相同的材料制成。 该电子装置包括在第一层和第二电极之间的第二电极和第四界面层，并且包括第二场效应晶体管，其包括第二半导体部分，第二栅极和第二栅极与第二栅极之间的至少第五层 第二半导体部分。 第五层由与第四层相同的材料制成。