公开(公告)号：US11321626B2

公开(公告)日：2022-05-03

申请号：US16626827

申请日：2018-06-27

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Leo Bourdet ,  Louis Hutin ,  Yann-Michel Niquet ,  Maud Vinet

IPC分类号： G06N10/00 ,  H01L29/10 ,  H01L29/66 ,  H01L29/76 ,  B82Y10/00

摘要： A method is described for controlling a spin qubit quantum device that includes a semiconducting portion, a dielectric layer covered by the semiconducting portion, a front gate partially covering an upper edge of the semiconducting portion, and a back gate. The method includes, during a manipulation of a spin state, the exposure of the device to a magnetic field B of value such that g·μB·B>min(Δ(Vbg)). The method also includes the application, on the rear gate, of an electrical potential Vbg of value such that Δ(Vbg)

公开(公告)号：US09911841B2

公开(公告)日：2018-03-06

申请号：US15066590

申请日：2016-03-10

申请人： Commissariat a l'Energie Atomique et aux Energies Alternatives

发明人： Sylvain Barraud ,  Ivan Duchemin ,  Louis Hutin ,  Yann-Michel Niquet ,  Maud Vinet

IPC分类号： H01L29/76 ,  H01L29/06 ,  H01L29/66 ,  H01L29/786 ,  B82Y10/00 ,  H01L29/10

CPC分类号： H01L29/7613 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/1033 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/66545 ,  H01L29/78618 ,  H01L29/78696

摘要： Single-electron transistor comprising at least: first semiconductor portions forming source and drain regions, a second semiconductor portion forming at least one quantum island, third semiconductor portions forming tunnel junctions between the second semiconductor portion and the first semiconductor portions, a gate and a gate dielectric located on at least the second semiconductor portion, in which a thickness of each of the first semiconductor portions is greater than the thickness of the second semiconductor portion, and in which a thickness of the second semiconductor portion is greater than the thickness of each of the third semiconductor portions.