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公开(公告)号：US07989255B2
公开(公告)日：2011-08-02
申请号：US12464622
申请日：2009-05-12
申请人： Craig Edward Murphy , Salvatore Cina , Timothy Butler , Matthew Roberts , Nalinkumar Lallubhai Patel , Clare Louise Foden , Mark Levence Leadbeater , Daniel Alan Forsythe , Robert Sidney Archer , Nicholas de Brissac Baynes , Nathan Luke Phillips , Anil Raj Duggal , Jie Liu
发明人： Craig Edward Murphy , Salvatore Cina , Timothy Butler , Matthew Roberts , Nalinkumar Lallubhai Patel , Clare Louise Foden , Mark Levence Leadbeater , Daniel Alan Forsythe , Robert Sidney Archer , Nicholas de Brissac Baynes , Nathan Luke Phillips , Anil Raj Duggal , Jie Liu
IPC分类号： H01L21/00
CPC分类号： H01L51/0043 , H01L51/0003 , H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/0059 , H01L51/5012 , H01L51/5048 , H01L51/56
摘要： A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge carriers of a first type; forming over the first electrode a first layer that is at least partially insoluble in a solvent by depositing a first semiconducting material that is free of cross-linkable vinyl or ethynyl groups and is, at the time of deposition, soluble in the solvent; forming a second layer in contact with the first layer and comprising a second semiconducting material by depositing a second semiconducting material from a solution in the solvent; and forming over the second layer a second electrode capable of injecting or accepting charge carriers of a second type wherein the first layer is rendered at least partially insoluble by one or more of heat, vacuum and ambient drying treatment following deposition of the first semiconducting material.
摘要翻译： 一种形成光学器件的方法，包括以下步骤：提供包括能够注入或接受第一类型的电荷载体的第一电极的衬底; 在第一电极上形成至少部分不溶于溶剂的第一层，该第一层通过沉积不含可交联乙烯基或乙炔基的第一半导体材料，并且在沉积时可溶于溶剂; 形成与所述第一层接触的第二层，并且通过从所述溶剂中的溶液沉积第二半导体材料而包括第二半导体材料; 以及在所述第二层上形成能够注入或接受第二种类型的电荷载体的第二电极，其中在所述第一半导体材料沉积之后，通过一种或多种热，真空和环境干燥处理使所述第一层至少部分地不溶解。
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公开(公告)号：US20090227052A1
公开(公告)日：2009-09-10
申请号：US12464622
申请日：2009-05-12
申请人： Craig Edward Murphy , Salvatore Cina , Timothy Butler , Matthew Roberts , Nalinkumar Lallubhai Patel , Clare Louise Foden , Mark Levence Leadbeater , Daniel Alan Forsythe , Robert Sidney Archer , Nicholas de Brissac Baynes , Nathan Luke Phillips , Anil Raj Duggal , Jie Liu
发明人： Craig Edward Murphy , Salvatore Cina , Timothy Butler , Matthew Roberts , Nalinkumar Lallubhai Patel , Clare Louise Foden , Mark Levence Leadbeater , Daniel Alan Forsythe , Robert Sidney Archer , Nicholas de Brissac Baynes , Nathan Luke Phillips , Anil Raj Duggal , Jie Liu
CPC分类号： H01L51/0043 , H01L51/0003 , H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/0059 , H01L51/5012 , H01L51/5048 , H01L51/56
摘要： A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge carriers of a first type; forming over the first electrode a first layer that is at least partially insoluble in a solvent by depositing a first semiconducting material that is free of cross-linkable vinyl or ethynyl groups and is, at the time of deposition, soluble in the solvent; forming a second layer in contact with the first layer and comprising a second semiconducting material by depositing a second semiconducting material from a solution in the solvent; and forming over the second layer a second electrode capable of injecting or accepting charge carriers of a second type wherein the first layer is rendered at least partially insoluble by one or more of heat, vacuum and ambient drying treatment following deposition of the first semiconducting material.
摘要翻译： 一种形成光学器件的方法，包括以下步骤：提供包括能够注入或接受第一类型的电荷载体的第一电极的衬底; 在第一电极上形成至少部分不溶于溶剂的第一层，该第一层通过沉积不含可交联乙烯基或乙炔基的第一半导体材料，并且在沉积时可溶于溶剂; 形成与所述第一层接触的第二层，并且通过从所述溶剂中的溶液沉积第二半导体材料而包括第二半导体材料; 以及在所述第二层上形成能够注入或接受第二种类型的电荷载体的第二电极，其中在所述第一半导体材料沉积之后，通过一种或多种热，真空和环境干燥处理使所述第一层至少部分地不溶解。
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公开(公告)号：US07531377B2
公开(公告)日：2009-05-12
申请号：US10526804
申请日：2003-09-03
申请人： Craig Edward Murphy , Salvatore Cina , Timothy Butler , Matthew Roberts , Nalinkumar Lallubhai Patel , Clare Louise Foden , Mark Levence Leadbeater , Daniel Alan Forsythe , Robert Sidney Archer , Nicholas de Brissac Baynes , Nathan Luke Phillips , Anil Raj Duggal , Jie Liu
发明人： Craig Edward Murphy , Salvatore Cina , Timothy Butler , Matthew Roberts , Nalinkumar Lallubhai Patel , Clare Louise Foden , Mark Levence Leadbeater , Daniel Alan Forsythe , Robert Sidney Archer , Nicholas de Brissac Baynes , Nathan Luke Phillips , Anil Raj Duggal , Jie Liu
IPC分类号： H01L21/00
CPC分类号： H01L51/0043 , H01L51/0003 , H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/0059 , H01L51/5012 , H01L51/5048 , H01L51/56
摘要： A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge carriers of a first type; forming over the first electrode a first layer that is at least partially insoluble in a solvent by depositing a first semiconducting material that is free of cross-linkable vinyl or ethynyl groups and is, at the time of deposition, soluble in the solvent; forming a second layer in contact with the first layer and comprising a second semiconducting material by depositing a second semiconducting material from a solution in the solvent; and forming over the second layer a second electrode capable of injecting or accepting charge carriers of a second type wherein the first layer is rendered at least partially insoluble by one or more of heat, vacuum and ambient drying treatment following deposition of the first semiconducting material.
摘要翻译： 一种形成光学器件的方法，包括以下步骤：提供包括能够注入或接受第一类型的电荷载体的第一电极的衬底; 在第一电极上形成至少部分不溶于溶剂的第一层，该第一层通过沉积不含可交联乙烯基或乙炔基的第一半导体材料，并且在沉积时可溶于溶剂; 形成与所述第一层接触的第二层，并且通过从所述溶剂中的溶液沉积第二半导体材料而包括第二半导体材料; 以及在所述第二层上形成能够注入或接受第二种类型的电荷载体的第二电极，其中在所述第一半导体材料沉积之后，通过一种或多种热，真空和环境干燥处理使所述第一层至少部分地不溶解。
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公开(公告)号：US08648334B2
公开(公告)日：2014-02-11
申请号：US12991381
申请日：2009-03-31
IPC分类号： H01L29/08
CPC分类号： H01L51/5231 , H01L51/5221 , H01L51/5234 , H01L51/56 , H05B33/28
摘要： A method of manufacturing an organic light emissive device comprising: depositing an organic light emissive layer over an anode and depositing a cathode over the organic light emissive layer, wherein the cathode comprises a trilayer structure formed by: depositing a first layer comprising an electron injecting material; depositing a second layer over the first layer, the second layer comprising a metallic material having a workfunction greater than 3.5 eV; and depositing a third layer over the second layer, the third layer comprising a metallic material having a workfunction greater than 3.5 eV.
摘要翻译： 一种制造有机发光器件的方法，包括：在阳极上沉积有机发光层并在有机发光层上沉积阴极，其中所述阴极包括通过以下步骤形成的三层结构：沉积包含电子注入材料的第一层 ; 在所述第一层上沉积第二层，所述第二层包括具有大于3.5eV的功函数的金属材料; 以及在所述第二层上沉积第三层，所述第三层包括具有大于3.5eV的功函数的金属材料。
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公开(公告)号：US20110057229A1
公开(公告)日：2011-03-10
申请号：US12991381
申请日：2009-03-31
CPC分类号： H01L51/5231 , H01L51/5221 , H01L51/5234 , H01L51/56 , H05B33/28
摘要： A method of manufacturing an organic light emissive device comprising: depositing an organic light emissive layer over an anode and depositing a cathode over the organic light emissive layer, wherein the cathode comprises a trilayer structure formed by: depositing a first layer comprising an electron injecting material; depositing a second layer over the first layer, the second layer comprising a metallic material having a workfunction greater than 3.5 eV; and depositing a third layer over the second layer, the third layer comprising a metallic material having a workfunction greater than 3.5 eV.
摘要翻译： 一种制造有机发光器件的方法，包括：在阳极上沉积有机发光层并在有机发光层上沉积阴极，其中所述阴极包括通过以下步骤形成的三层结构：沉积包含电子注入材料的第一层 ; 在所述第一层上沉积第二层，所述第二层包括具有大于3.5eV的功函数的金属材料; 以及在所述第二层上沉积第三层，所述第三层包括具有大于3.5eV的功函数的金属材料。
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